55NG Search Results

55NG

Abstract: 4855ng 4855n NTD4855NT4G NTD4855N-1G NTD4855N-35G 369D
Contextual Info: NTD4855N Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices

55NG

Abstract: 4855n 369D NTD4855N-1G NTD4855NT4G NTD4855NT4H
Contextual Info: NTD4855N Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com

Contextual Info: 1N4933G THRU FORWARD INTERNATIONAL ELECTRONICS L ID . SEMICONDUCTOR TECHNICAL DATA -j |\j 4 9 3 - 7 Q TECHNICAL SPECIFICATIONS O F FAST RECOVERY GLASS PASSIVATED RECTIFIER VOLTAGE RANGE - 50 to 600 Volts CURRENT - 1.0 Ampere FEATURES * High reliability • Low leakage

Contextual Info: NTD4855N Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com

Contextual Info: NTD4855N Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices