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NTD4855NT4G Datasheets (1)

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On Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NTD4855NT4G		On Semiconductor	Power MOSFET 25V, 97A, Single N-Channel	Original	PDF	92.37KB	8

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onsemi


onsemi NTD4855NT4G MOSFET N-CH 25V 14A/98A DPAK
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Vyrian	NTD4855NT4G		7,937			1 - 10 - 100 - 1000 - 10000 -	Get Quote

NTD4855NT4G Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
55NG Abstract: 4855ng 4855n NTD4855NT4G NTD4855N-1G NTD4855N-35G 369D Contextual Info: NTD4855N Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices	Original	NTD4855N NTD4855N/D 55NG 4855ng 4855n NTD4855NT4G NTD4855N-1G NTD4855N-35G 369D	PDF
55NG Abstract: 4855n 369D NTD4855N-1G NTD4855NT4G NTD4855NT4H Contextual Info: NTD4855N Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com	Original	NTD4855N NTD4855N/D 55NG 4855n 369D NTD4855N-1G NTD4855NT4G NTD4855NT4H	PDF
Contextual Info: NTD4855N Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com	Original	NTD4855N NTD4855N/D	PDF
Contextual Info: NTD4855N Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices	Original	NTD4855N NTD4855N/D	PDF