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    4855N Search Results

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    Thomas & Betts 54855N

    Connector Terminal Splice Copper
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics 54855N
    • 1 $130.80
    • 10 $40.35
    • 100 $34.59
    • 1000 $32.86
    • 10000 $32.86
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    Apex Tool Group LLC T0058744855N

    WELLER, SOLDERING IRONS BARREL FOR WXP 120
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    RS T0058744855N Bulk 1
    • 1 $130.00
    • 10 $123.50
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    • 1000 $123.50
    • 10000 $123.50
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    Phoenix Contact 2864095

    Signal Conditioners & Signal Converters MINI MCR-SL-R-UI POTENTIOMETER TRANSD
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    TTI 2864095 Each 4 1
    • 1 $462.16
    • 10 $453.05
    • 100 $444.12
    • 1000 $444.12
    • 10000 $444.12
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    Littelfuse Inc 0326004.MXP

    Cartridge Fuses 250V 4A Slo-Blo
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    TTI 0326004.MXP Bulk 1,000
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    • 1000 $1.11
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    Chemi-Con EKXJ401ELL181MM45S

    Aluminum Electrolytic Capacitors - Radial Leaded 400VDC 180uF Tol 20% 18x45mm AEC-Q200
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    TTI EKXJ401ELL181MM45S Bulk 250
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    • 1000 $3.18
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    4855N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    55NG

    Abstract: 4855ng 4855n NTD4855NT4G NTD4855N-1G NTD4855N-35G 369D
    Contextual Info: 4855N Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original
    ntd4855nntd4855n/d55ng4855ng+54855nntd4855nt4gntd4855n-1gntd4855n-35g369d PDF

    55NG

    Abstract: 4855n 369D NTD4855N-1G NTD4855NT4G NTD4855NT4H
    Contextual Info: 4855N Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original
    ntd4855nntd4855n/d55ng4855n+4369dntd4855n-1gntd4855nt4gntd4855nt4h PDF

    Contextual Info: 4855N Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original
    ntd4855nntd4855n/d PDF

    Contextual Info: 4855N Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original
    ntd4855nntd4855n/d PDF