G736A Search Results

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Siemens 1FW32852FG736AA0 TORQUE MOTOR. 4950 NM. 250 RPM. ; 1FW32852FG736AA0
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	1FW32852FG736AA0	Bulk		2 Weeks	1	1 $106756.98 10 $106756.98 100 $106756.98 1000 $106756.98 10000 $106756.98	Get Quote

G736A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
l55a Abstract: UL55A G535A g435 L54B G536a UL-55 G335A GB72A BUP46 Contextual Info: Power M anagem ent Division Sem elab B I-P O L A R POWER TRANSISTORS D iffused by S EM E F A B in G lenrothes and built by S E M E LA B in Lutterw orth are tw o ranges of high energy B i-P o la r transistors: • G 170 series of 4 die de sig ned fo r use in ve ry fast sw itching high voltage applications.	OCR Scan	ul55b ul54b ul54a g577a +12g677a gc77a ul55a l55a g535a g435 l54b g536a ul-55 g335a gb72a bup46	PDF
BUV18 Abstract: chip die npn transistor BUW38 G936A BUV51 G636A BUW51 G336A BUP46 BUP55 Contextual Info: MflE D A1331S7 D D D 0 4 n TMT SEMEFABF SEMELAB LTD W- \-3>5-D7 The G136 chip family is an NPN bipolar multi-epitaxial planar transistor intended for applications requiring fast switching, low saturation, high power robust devices. • UP TO 55 AMPS • UP TO 6 5 0 VOLTS VCBO	OCR Scan	a1331s7 g536a g636a g736a +12g336a g436a buv51 buw51 buw61 g236a buv18 chip die npn transistor buw38 g936a bup46 bup55	PDF

Catalog Datasheet

Type

Document Tags

PDF

l55a

Abstract: UL55A G535A g435 L54B G536a UL-55 G335A GB72A BUP46
Contextual Info: Power M anagem ent Division Sem elab B I-P O L A R POWER TRANSISTORS D iffused by S EM E F A B in G lenrothes and built by S E M E LA B in Lutterw orth are tw o ranges of high energy B i-P o la r transistors: • G 170 series of 4 die de sig ned fo r use in ve ry fast sw itching high voltage applications.

OCR Scan

ul55b ul54b ul54a g577a +12

PDF

BUV18

Abstract: chip die npn transistor BUW38 G936A BUV51 G636A BUW51 G336A BUP46 BUP55
Contextual Info: MflE D A1331S7 D D D 0 4 n TMT SEMEFABF SEMELAB LTD W- \-3>5-D7 The G136 chip family is an NPN bipolar multi-epitaxial planar transistor intended for applications requiring fast switching, low saturation, high power robust devices. • UP TO 55 AMPS • UP TO 6 5 0 VOLTS VCBO