000151B Search Results

AV191003C940N

Abstract: AV021003C940N AV1003
Contextual Info: t ILE b3MbSD2 000151b 2b=i FEATURES Contact ratings: 2 A at 48 VDC max. resistive load Initial contact resistance: 10 milliohms max. at 1 A, 2 V Insulation resistance: 1000 megohms min. at 500 VDC Dielectric strength: 4000 V rms min. between terms. & • .755" (19 mm) dia. and .866" (22 mm) dia. models.

Contextual Info: CERMETEK MICROELECTRONICS 3ÔE D B 2DDSÔÜ3 0G0Ì212 b M C E R CH1814, CH1828 and CH1830 International Telephone Line Interface Modules 'T ' 7 S ^ -°S INTRODUCTION FEATURES Products that are designed to connect directly to the telephone line such as modems, FAX m achines or automated voice pro­

Contextual Info: im m = nil SEME IRFN250 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 2.0 3.5 3.5 200V V Dss 0.25 14A 0.1 OOO ^D(cont) 3.0 ^DS(on) i5 FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF

MPS 1005

Abstract: DB10 MP574A MP674JN MP674JP MP674JS MP674KN MP674KP MP674KS MICRO POWER SYSTEMS
Contextual Info: MICRO PO WE R S Y S T E M S INC blE ]> • bOT7444 0004544 4flfi B M P S —£i-! -iz- MP674 Complete 12-Bit, 12 |is Anaiog-to-Digital Converter with Microprocessor Interface M Micro Power Systems FEATURES • • • • • • Complete 12-Bit A/D Converter with Reference

NE99532

Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563
Contextual Info: NEC/ CALIFORNIA 1SE D bMs?m4 D D o m a i a T IM S - T - it- t r NEC NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES T'3h21 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G A IN B A N D W ID T H P R O D U C T : f r = 7 G H z The NE856 series of NPN epitaxial silicon transistors Is de­

MBM27C1000-20

Contextual Info: FUJITSU MICROELECTRONICS F U J IT S U 374=!7b2 OOCHEIO b 23E D CMOai.048,576.BI UV ERASABLE REAI ONLY MEMOR MBM27C1000-15 MBM27C1000-20 MBM27C1000-25 April 1988 Edition 2.0 CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY EPROM The Fujitsu MBM27C1000 EPROM Is a high speed read-only static mem ory th a t Is

Z89COO

Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Z89C00 1 6 -B it D ig it a l S ig n a l p r o c e s s o r FEATURES • 16-Bit Single Cycle Instructions ■ 16-Bit I/O Port ■ Zero Overhead Hardware Looping ■ 4K Words of On-Chip Masked ROM ■ 16-Bit Data ■ Three Vectored Interrupts

NN511662

Contextual Info: NN511662 series EDO Hyper Page Mode CMOS 64Kx 16bit Dynamic RAM NPN/A> DESCRIPTION The NN511662 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511662 series is fabricated with advanced CMOS technology and designed with innovative design tech­

XTAL78

Abstract: QDD1443 Z86C95 tda 2022 P2M SCR Z86C9524VSC
Contextual Info: P r e l im in a r y P r o d u c t S p e c if ic a t io n Z86C95 CMOS Z8 S ig n a l DIGITAL p r o c e s s o r _ FEATURES • Complete Microcontroller, 16 I/O Lines, and up to 64 Kbytes of Addressable External Space Each for Program and Data Memory

A01 monolithic amplifier

Abstract: A02 monolithic amplifier CCD LINEAR SENSOR 512 CCD linear array A03 monolithic amplifier CCD412A Loral linear image sensor transparent substrate Contact image sensor fairchild
Contextual Info: LDRAL Fairchild Im aging Sensors C C D 4 1 2 A 512 x 512 Element Full Frame Image SenSOf FEATURES • 512 x 512 Photosite Array ■ 1£^m x 1£pim Pixel ■ 7.68mm x 7.68 mm Image Area ■ 100% Fill Factor ■ Multi-Pinned Phase MPP Option ■ Readout Noise Less Than 7 Electrons at 250k pixels/ sec

Contextual Info: NN511662 series EDO Hyper Page Mode CMOS 64K x 16bit Dynamic RAM N PN > a< DESCRIPTION The NN511662 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511662 series is fabricated with advanced CMOS technology and designed with innovative design tech­

Contextual Info: July, 1994 INC. Industrial TM PA7128I PEEL Array Programmable Electrically Erasable Logic Array Features I Industrial Grade Specifications - Vcc = 4.5V to 5.5V, TA = -40 to +85=C - Reprogrammable 28-pin DIP, SOIC, and 28-pin PLCC packages • High-Speed, Moderate Power Consumption

it27

Abstract: Fairchild Imaging Fairchild Imaging CCD Contact image sensor fairchild
Contextual Info: LDRAL Fairchild Imaging Sensors CCD412A 512 x 512 Element Full Frame Image Sensor FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 512 x 512 Photosite Array 1{ÿim x 1£pm Pixel 7.68mm x 7.68 mm Image Area 100% Fill Factor Multi-Pinned Phase MPP Option Readout Noise Less Than 7 Electrons at 250k pixels/sec

VTR17D1

Contextual Info: Reflective Optoswitch VTR17D1, 17E1 Arrow Retro with Flying Leads PRODUCT DESCRIPTION This series of reflective optical switches com­ bines an infrared emitting diode IRED with an NPN phototransistor (VTR17D 1) or photodarlington (VTR 17E1) in a one piece, sealed, IR

POTTER eotz-240d15

Abstract: ICS-1-109 rma 16 relay EOTZ-240D15 240D25 EOMZ-240D15 EOTZ-240D15R EOMZ-240D25R Potter E22575 32 amp
Contextual Info: POTTER & BRUMFIELD S3E D • û23b31E DDDISIS 7ST « S I E C NEW 25 AMP MODEL AVAILABLE E O M Z / E O T Z SIEMENS/ POTTER/BRUMFIELD seríes7 0 ^' 0.02 to 25 AMP LOW-COST SOLID STATE AC RELAY ^ File E22575 & E29244 <IB File LR15734 EOMZ FEATURES ENG INEERING DATA

G001S

Contextual Info: H igh Perform ance 256K.X 16 CMOS DRAM H AS4C256K16F0 A Hiah Speed 2S6KX16 CMOS DRAM Fast pane mode Preliminary information Features • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s b y 16 b its • R e a d -m o d ify -w rite • H ig h sp e ed - 5 0 /6 0 ns RAS access tim e

suzuki DT4

Abstract: fd 20049 pc 525 R300F TXC-03303-MB DS200F3 llb10 dt28 mod 4 counter SU-210
Contextual Info: M 13E D e vice DS3/DS1 MUX/DEMUX, Extended Features TXC-03303 DATA SHEET Preliminary • Multiplexes/demultiplexes 28 DS1 signals into a DS3 signal. • M13 or C-bit parity mode operation • FEBE, C, or P-bit parity error insertion capability • DS3 idle signal generators

32T52

Contextual Info: Æ \W M Ü E 1 D D M lF @ ^ lM ]^ ir D © l M I M X29L81 OOT/B C FE A TU R E S B M -B IT [1 M / 5 1 2 K x 8 / x 1 B ] C M O S S IN G L E V O L T A G E 3 V O N L Y F L A S H E E P R O M • Extended single-supply voltage range 2.7V to 3.6V for read and write

WB6S

Abstract: Cordless Phone system block diagram AXOV
Contextual Info: W9320 Winbond Electronics Corp. ADPCM CODEC Table o f Contents1. GENERAL DESCRIPTION. 2 2.

NEC D765

Abstract: 8272 floppy disk controller block diagram of 8272 floppy disk controller 82C226 8272A floppy disk controller block diagram NEC uPA 63 H floppy disk controller 8272 CHIPS TECHNOLOGIES MR 250-2.-5 NS16550
Contextual Info: CH I P S . im a £ TE C H N O L O G I E S INC 12E D | SO'ìflllb 0 0 0 1501 b | u u u m .,u iu C H I ir ^ S -T -5 2 -3 3 -D 5 82C607 M ultifunction Controller Single Chip UART and Analog Data Separator