400NM Search Results

Q62702P0956

Abstract: sfh203fa SFH203 RoHS SFH203
Contextual Info: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 203 SFH 203 FA SFH 203 SFH 203 FA Wesentliche Merkmale Features • Wellenlängenbereich (S10%) 400nm bis 1100nm (SFH203) und 750nm bis 1100nm (SFH203FA) • Kurze Schaltzeit (typ. 5 ns)

Contextual Info: Get Full Datasheet 3V Wide Optical Spectrum Laser Power Monitor IC ISL58334 Features The ISL58334 photo sensor IC has a wide optical spectral sensitivity from 400nm to 1000nm. It is good for multiple light sources application, such as laser based projectors. ISL58334

Lateral Effect Photodiode

Contextual Info: High Linearity Position Sensing Detector Part Number: S1-0034 Description:1L30UV_SU2 The SiTek 1L30UV is optimised for use in the UV wave length region 200, to 400nm. As SiTek standard PSDs it works according to the Lateral Effect Photodiode principle. It is an analogue device and

Contextual Info: [ UTZ-SC0334_3 ] 2013/10/16 Ultra Violet Laser Diode NDU4316E Engineering Sample Outline Dimension Features • Optical Output Power: CW120mW • Peak Wavelength: 390-400nm • Can Type: φ 5.6 Floating Mounted with Photo Diode and Zener Diode Unit mm (

Contextual Info: High Linearity Position Sensing Detector Part Number: S1-0072 Description: 1L2,5UV_CP2 The SiTek 1L2,5UV PSD is optimised for use in the UV wavelength region 200, to 400nm. As SiTek standard PSDs it works according to the Lateral Effect Photodiode principle. It is an analogue device and

LCOS driver

Abstract: LCOS LCOS panels AN1448 ISL58328 DLP pico projector pico projector dlp photo LCOS pico projector AN1356
Contextual Info: 5V Wide Optical Spectrum Laser Power Monitor IC ISL58328 Features The ISL58328 photo sensor IC has a wide optical spectral sensitivity from 400nm to 1000nm. It is good for multiple light sources application, such as laser based projectors. ISL58328 has two banks of three sets of gain registers. For a Pico-Projector

TW30DZ

Abstract: photodiode amplifier OPA128 SLOA011
Contextual Info: Ultraviolet selective thin film sensor “TW30DZ” NEW: Read important application notes on page 4 ff. Features • • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Built-in filter glass for low sensitivity above 400nm

TW30DY2

Abstract: OPA128 SLOA011
Contextual Info: Ultraviolet selective thin film sensor “TW30DY2” NEW: Read important application notes on page 4 ff. Features • • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Built-in filter glass for low sensitivity above 400nm

UV-005EQ

Abstract: UV-035EQ spectrophotometer E152801 E14800 UV-001D UV-013EQ 320nm 100-EC UV-100EC
Contextual Info: UV-EQ / EQC / EK SERIES new UV Enhanced, Suppressed NIR Photodiode OSI optoelectronics introduces new family of Planar Diffused UV Enhanced Photodiode: the UV–EQ and UV–EQC Series. The new Silicon is processed for enhanced responsivity over 200-400nm and sensitivity down to 190 nm.

Contextual Info: BPX 90 BPX 90F SIEMENS DAYLIGHT FILTER Silicon Planar Photodiode D im ensions in inch e s m m .212(5.4) .193(4,9) 177 (4.5) .090(2.3) 07912.(5) C hip position .024 (.6) .016 (.4) FEATURES • Especially suitable for applications - BPX 90: 400nm to 1100 nm

SFH 2302

Contextual Info: Schnelle PIN-Fotodiode High Speed PIN-Photodiode Lead Pb Free Product - RoHS Compliant SFH 2302 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen von 400nm bis 1050nm • Sehr kurze Schaltzeit im spezifizierten Wellenlängenbereich • Sehr kurze Schaltzeit bei geringer

Contextual Info: Get Full Datasheet Wide Optical Spectrum Laser Power Monitor IC ISL58327 Features The ISL58327 photo sensor IC has a wide optical spectral sensitivity from 400nm to 1000nm. It is good for multiple light source applications, such as laser based projectors. The

ultraviolet sensor

Abstract: UV30DZ
Contextual Info: Ultraviolet selective thin film sensor UV30DZ Features • • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Built-in filter glass for low sensitivity above 400nm Large photoactive area

HUVL400-510

Abstract: HUVL400-520 HUVL400-530 530 transistor
Contextual Info: HUVL400-5x0 Ultraviolet LEDs • Features Ultraviolet Light Emitting Diode 400nm 5mm Diameter Clear Epoxy Package Three Emission Angles Available ■ Absolute Maximum Ratings Ta = 25oC Parameter Pulsed forward current (t ≤ 10ms) Duty cycle 1/10 Forward current

Contextual Info: EPD-360-0-0.3-C/D* UV-Photodiodes Wavelength range Type Technology Case UVA UV glass with filter SiC TO-5 Description High spectral sensitivity in the UVA range 330 nm - 400nm , low cost chip based on SiC 1,2 Applications Environmental technology, analytical techniques,

Contextual Info: Ultraviolet selective thin film sensor TW30DY Features • • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Built-in filter glass for low sensitivity above 400nm Large photoactive area

SPCM-AQR-13

Abstract: SPCM-AQR SPCM-AQR-14 SPCM-AQR-15 PerkinElmer Avalanche Photodiode SPCM-AQR-12 SPCM SPCM-AQR-16 Silicon Photocells SPCM-AQR-1X
Contextual Info: The SPCM-AQR is a self-contained module that detects single photons of light over the 400nm to 1060nm wavelength range - a range and sensitivity that often outperforms a photo-multiplier tube. The SPCM-AQR-IX uses a unique silicon avalanche photodiode with

650NM photodetector

Abstract: 650nm visible photodetector P3MXP1039
Contextual Info: P3MXP1039 PC/PV Visible Enhanced Photo Detectors SANTA ANA DIVISION PRODUCT PREVIEW Microsemi’s Optomite package is designed for low profile Visual Enhanced Photodetector applications in wavelengths from 400nm to 1100nm. Based on Microsemi’s patented Powermite 3 packaging technology,

SFH2701

Abstract: photodiode 650nm nep GPLY7034 OHLA0687 OPTO 2701 400nm
Contextual Info: Schnelle PIN-Fotodiode High Speed PIN-Photodiode Lead Pb Free Product - RoHS Compliant SFH 2701 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen von 400nm bis 1050nm • Sehr kurze Schaltzeit im spezifizierten Wellenlängenbereich • Sehr kurze Schaltzeiten bei geringer

Contextual Info: High Linearity Position Sensing Detector Part Number: S1-0032 Description: 1L5UV_CP2 The SiTek 1L5UV PSD is optimised for use in the UV wavelength region, 200 to 400nm. As SiTek standard PSDs it works according to the Lateral Effect Photodiode principle. It is an analogue device and

phototransistor npn

Abstract: phototransistor 400nm OP800 OP800A OP800B OP800C OP800D
Contextual Info: NPN Silicon Phototransistor OP800A, OP800B, OP800C, OP800D Features: • • • • • • Narrow receiving angle Suitable for applications from 400nm to 1100 Variety of sensitivity ranges TO-18 hermetically sealed package Enhanced temperature range Base lead connection

Contextual Info: Wide Optical Spectrum Laser Power Monitor IC ISL58327 Features The ISL58327 photo sensor IC has a wide optical spectral sensitivity from 400nm to 1000nm. It is good for multiple light source applications, such as laser based projectors. The ISL58327 has two banks of three sets of gain registers. For a

Laser Diode for data projector

Abstract: laser Projector ISL58344 LCOS driver PROJECTOR through beam sensor circuit diagram mems projector LED UV 400nm LCOS uv
Contextual Info: Get Full Datasheet Quad Segment Photo Sensor IC ISL58344 Features The ISL58344 photo sensor IC has a wide optical spectral sensitivity from 400nm to 1000nm. It is good for multiple light source applications, such as laser base projectors. The three sets of gain registers can be used to adjust optical-to-electrical

A950 O

Abstract: BPX90 F
Contextual Info: SIEMENS BPX 90 BPX 90F DAYLIGHT FILTER Silicon Planar Photodiode BPX 90 FEATURES • Especially suitable for applications - BPX 90:400nm to 1100 nm - BPX90 F: 950 nm • High photosensitivity • DIL plastic package with high packing den­ sity APPLICATIONS