2n6719
Contextual Info: . . w . . bflF- High VoltageAmplifiers Device V CE0 sust (Volts) Min 300 k bSQ113D 003^532 hfiT « N S C 5 NATL SEHIC0ND (DISCRETE ) lc (mA) V CE(sal) lc 4 U (Volts) Min fT Max Mia (mA) 2N6719 500 40 30 MMBTA42 500 40 30 0.5 20 500 40 30 0.5 20 500
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2n6719mmbta42mpsa42mmbta92+6mpsa92bsq113d2n5401mmbt54012n5400mpsl51
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NDS9936
Abstract: Vi46 ab-1 national
Contextual Info: N at i o n a l tß May 1996 Semiconductor" NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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nds9936ls01130125-cbs01130+2vi46ab-1 national
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55b6
Abstract: NDC631N
Contextual Info: National J u ly 1 9 9 6 Semiconductor NDC631N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description • 4.1 A, 20 V. R ^ , = 0.06 Cl @ V GS = 4.5 V Rds,on, = 0.0 75 Cl @ V GS =2.7 V. These N-Channel lo g ic level enhancem ent m ode
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Contextual Info: MPSA56 I MMBTA561 PZTA56 Discrete POWER & Signal Technologies National Semiconductor PZTA56 MMBTA56 MPSA56 SOT-23 SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.
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mpsa56mmbta56pzta56ot-23+3ot-223bsd1130psa56
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mpsa92 "sot23"
Abstract: mpsa92
Contextual Info: MPSA92 / MMBTA92 / PZTA92 Discrete POWER & Signal Technologies National e ? Semiconductor~ MMBTA92 MPSA92 PZTA92 SOT-23 SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings*
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mpsa92mmbta92pzta92ot-23+4ot-223bsq113ddd407mpsa92 "sot23
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bc2378
Abstract: box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633
Contextual Info: This Material Pro Electron Series Copyrighted 3> -i PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET By Type No. Its BC107 Respective BC107A Case Styl« TO-18 TO-18 VCES* VC8 0 (VI Min 50 50 VCEO (V) Min V e BO (V) Min 45 6 45 6 'CES* 'CBO a V CB (Vi
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ts0113dj15511sd1130bc2378+9box33cb0345b0348b0735b0346b073bb0736b0737b0633
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bc807
Abstract: BC807-40 BC807-25 BC807-16
Contextual Info: Semiconductor" BC807-16 BC807-25 BC807-40 SOT-23 BC807-16 / BC807-25 / BC807-40 t? Discrete POWER & Signa l Technologies National B Mark: S A ./5 B ./5 C . PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 1.0 A. Sourced from Process 78.
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