2N6734 Search Results

2SA675

Abstract: 2SC507
Contextual Info: High Voltage Transistors TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS Pd IC VCEO ICM» VCER* mW (mA) (V) HFE min m u 2N6734 2N6735 2SA637 2SA639 2SA675 P P P P P TO-237A TO-237A TO-18 TO-92B TO-92B 25000 2S00D 300 200 250 100 100 50 50 100 250 300 150* 180

2SA675

Abstract: 2sc1279 2SA685 2N6734 2N6735 2SA749 2SC505 2SC506 2SC507 transistors 2SA749
Contextual Info: High Voltage Transistors TYFE NO. fO IA RITY CASE MAXIM UM RATINGS P4 IC VCEO ICM* VCEÄ* mA (V) (mW) 2N6734 2N6735 ZSA637 2SA639 2SA675 P P P P P TO-237A TO-237A TO* IS TO-92B TOW B 2500G 25000 300 200 250 100 2SA685 2SA749 2SC505 2SC306 2SC507 P P N N

2N6715

Abstract: 2N6716 2N6717 2N6718 2N6719 2N6731 2N6733 2N6734 2N6735 CIL2229
Contextual Info: TO-237 Plastic Package Transistors NPN Max mum Rating s Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Type ^CBO No. ^CE ^EBO (V) Min (V) Min (V) Min @Tc=25 c 50 40 5 0.75 2N6715 2N6716 2N6717 2N6718 2N6719 2N6731 2N6733 2N6734 2N6735

T1P42C

Contextual Info: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2N6730

Abstract: 2N6719 2N6714 2N6715 2N6716 2N6717 2N6718 2N6726 2N6727 2N6728
Contextual Info: Power Transistors TO-237 Case Ò Z TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (mA) MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250

CENW64

Abstract: 2N6714 2N6730 2N6715 2N6716 2N6717 2N6718 2N6719 2N6726 2N6727
Contextual Info: Pow er T ran sistors TO-237 Case Z Ò TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic i VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (V) (mA) MAX (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50

2N6718

Abstract: 2N6719 ATX smps troubleshooting 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722
Contextual Info: Power Transistors TO-237 Case TYPE NO. IC PD BVCBO V MIN BVCEO *BVCES (V) MIN (A) MAX (W) hFE @ IC VCE(SAT) @ IC MIN MAX fT (mA) (V) MAX (mA) (MHz) MIN 250 1,000 0.5 1,000 50 250 1,000 0.5 1,000 50 50 250 250 0.35 250 50 80 50 250 250 0.35 250 50 100 100

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

NSD134

Abstract: NSD459 NSD458 NSD133 NSE459 TO-202 D40N2 2N3440 nse458 2N6712
Contextual Info: NATL SEMICOND DISCRETE 52E D • T Z‘ 2~7~0/ bSG113Q 0D377flb 3 ■ NPN Medium Power Transistors by Ascending Vceo (continued) Part No. Vceo (V) Min Hfe @ lc/Vce Max ' (mA/V) Vce (sat) (V) Max lc/lb Package (mA)/(mA) PN7055 220 40 10/20 1.0 20 TO-92 D40P5

2N6706

Abstract: 2n6730 tn2905 CSC1573 MPSW13 2N6705 2N6707 2N6711 cil916 2N6713
Contextual Info: TO-237 DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 1,14 12,70 5.DEG MAX 5,33 5,20 4,19 0,55 0,50 0,55 1,40 2,54 - A L L DIM EN SIO N S A R E IN M.M. L L PIN CONFIGURATION AVAILABLE IN TO-237 CDIL Code Style 3 TO-237 PIN 1 PIN 2 PIN 3 Emitter Base

LM1011N

Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
Contextual Info: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44

Contextual Info: TO-237 Plastic Package Transistors NPN Maxinnum R atin gs Type No. ^CBO (V) Min ^CEO (V) Min Electrical Characteristics (Ta=25°C, U n le ss Otherw ise Specified) 'c (A) ^EBO (V) Min @Tc=25°c (W ) 'cm (A) 'c80 (HA) Max ^cs (V) •v* Min @ >0 & ^CE (mA) (V)

2N6805

Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab

jrc386d

Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
Contextual Info: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50

BFW45

Abstract: MPSD52 MPSD02 bfw44 2n5401 2N3114 BFX98 BFS89 BFS90 BFS91 BFT47
Contextual Info: TYPE NO. P O L A R IT Y High Voltage Transistors CASE M A X IM U M R A T IN G S h fe 'c Cob V C E S A T V CE0 Pd (mW) 'c m • Im A I TO-39 TO-39 TO-39 580 800 800 100 100 100 300 140 80 25 30 40 V CER • (V ) min max 'c Im A ) VCE (V ) 50 10 10 max fT

D40V2

Abstract: BF469S kt940a 2SC4030 D40N5 BF881 bf109 BF883S KT940B 140 telefunken
Contextual Info: POWER SILICON NPN Item Number Part Number I C -5 -10 15 25 30 35 40 45 - 50 55 60 65 70 -75 • 80 85 · 90 95 - 868 Ic Max Y(BR)CEO (A) (V) hFE Min Max fT ICBO Max t, Max PD Toper Max Max Max (Hz) (A) (8) (a) (W) (OC) 400 400 1.0 1.0 1.0 1.2 2.0 1.0 2.0 1.0

jrc386d

Abstract: LM3171 LM1011N MJ13005 UA78GKC upc1018c x0137ce PLL02A MN8303 HA1457w
Contextual Info: ECG To JEDEC and Japanese part numbers ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 2SA1265N ECG38 ECG39 ECG40 ECG41 ECG42

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

ztx450 equivalent

Abstract: transistor equivalent ZTX651 ztx650 equivalent MPS651 equivalent MPS751 equivalent ztx751 equivalent ZTX749 equivalent transistor ztx MPSW92 equivalent ZTX Zetex
Contextual Info: Z E T E X S U P ER E LIN E CROSS R EFER EN C E LIST This Cross-Reference List is intended as a guide to the selection of a direct or near equivalent device from the Zetex Super E-Line Range. Individual device specifications should be checked in detail before

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BTA08-600C equivalent

Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
Contextual Info: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B

nsdu10

Abstract: nse458 NSD134
Contextual Info: NATL SEMICOND DISCRETE 52E D • bSQ113Q 0D377flb 3 ■ 7 ~ 2 ~7~ £ / NPN Medium Power Transistors by Ascending Vceo (Continued) Part No. VCeo (V) Min Hfe @ lc/Vce Max (mA/V) Vce (sat) (V) Max •c/lb (mA)/(mA) 10/20 1,0 20 TO-92 Package PN7055 220 40 D40P5

2n6718

Abstract: 2N6719 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722 2N6723
Contextual Info: Power Transistors TO-237 Case TYPE NO. IC PD A (W) MAX BVCBO (V) MIN BVCEO *BVCES (V) MIN hFE @ IC VCE(SAT) @ IC MIN MAX fT (A) (V) MAX (A) (MHz) MIN 250 1,000 0.5 1,000 50 50 250 1,000 0.5 1,000 50 50 250 250 0.35 250 50 NPN PNP 2N6714 2N6726 2.0 2.0 40