2SC505 Search Results

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1899 POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • Complementary to 2SC5052. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT VCBO -1 2 0 V Collector-Emitter Voltage VCEO

2SC5053

Contextual Info: Transistors SMD Type Medium Power Transistor 2SC5053 Features Low saturation voltage, typically VCE sat = 0.12V at IC / IB = 500mA / 50mA. PC=2W (on 40x40×0.7mm ceramic board). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5053 Features Low saturation voltage, typically VCE sat = 0.12V at IC / IB = 500mA / 50mA. PC=2W (on 40x40×0.7mm ceramic board). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

2SC4926

Abstract: 2SC5051 Hitachi transistor DSA003638
Contextual Info: 2SC5051 Silicon NPN Epitaxial ADE-208-1131A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline

Contextual Info: 2SC5058 Silicon NPN Triple Diffused Planar HITACHI Application Character display horizontal deflection output Features • High speed switching tf < 0.3 jisec • High breakdown voltage VCbo = 1700 V Outline 1 Base 2 Collector 3 Emitter 2SC5058 Absolute Maximum Ratings Ta = 25°C

Contextual Info: 2SA1900 2SC5053 Transistors Medium Power Transistor —50V, —1A 2SA1900 I • Features 1) ^Absolute maximum ratings (Ta—2 5 t ) L o w VcEfsat). (T y p .— 0 .1 5 V a t Ic/I b = — 5 0 0 /— 5 0 m A ) 2 ) Pc = 2W Parameter Collector-base voltage C otiector-emitter voltage

2SC5053

Abstract: bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING
Contextual Info: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package 2SC5053 (MPT3) package marking: 2SC5053; CGit, where ★ is hFE code ¿s'* 4 .5 _ o-2 .i 1.6*0.1 UÌ Pc = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate

2SA1899

Abstract: 2SC5052
Contextual Info: TO SH IBA 2SC5052 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5052 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 2.7MAX. DRIVER STAGE AMPLIFIER APPLICATIONS. • ^1 Complementary to 2SA1899 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

2SK2752

Abstract: 2sk1326 3SK234 2SK431 3SK238 3SK229 3SK197 2SK1479 1535M 2SK190
Contextual Info: SMALL SIGNAL TRANSISTOR •High frequency amplifier Package code Type No. CMPAK 2SC4903 2SC4906 2SC4965 2SC4967 2SC5051 CMPAK-4 2SC4994 2SC4995 2SC5079 2SC5081 MPAK 2SC2619 2SC2620 2SC2732 2SCZ733 2SC2734 2SC2735 2SC2736 2SC2776 2SC3127 2SC3513 2SC3793 2SC3867

2SC5051

Abstract: 2SC5051YZ-TR-E PTSP0003ZA-A
Contextual Info: 2SC5051 Silicon NPN Epitaxial REJ03G0741-0300 Previous ADE-208-1131A Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz

2SC5053

Abstract: 2SA1900 T100
Contextual Info: 2SC5053 Transistors Medium power transistor 50V, 1A 2SC5053 zDimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA/ 50mA 2) PC=2W (on 40x40×0.7mm ceramic board) 3) Complements the 2SA1900 MPT3 (1)Base

Contextual Info: TO SH IB A 2SA1899 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 899 POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SC5052. MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING UNIT Collector-Base Voltage

2SC5053

Abstract: 2SA1900 T100 AL MARKING
Contextual Info: 2SA1900 Transistors Medium power transistor −50V, −1A 2SA1900 zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = −0.15V at IC / IB = −500mA/ −50mA 2) PC=2W (on 40x40×0.7mm ceramic board) 3) Complements the 2SC5053

Hitachi DSA00164

Contextual Info: 2SC5058 Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output Features • High speed switching tf ≤ 0.3 µsec • High breakdown voltage VCBO = 1700 V Outline TO-3PL 1. Base 2. Collector 3. Emitter 1 2 3 2SC5058 Absolute Maximum Ratings Ta = 25°C

Contextual Info: HITACHI 2SC5051 -Silicon NPN Bipolar Transistor Application VHF & U HF wide band amplifire CMPAK Features • High gain bandwidth product fT = 11 GHz typ • High gain, low noise figure PG = 14.5 dB typ, NF = 1.1 dB typ at f = 900 MHz m * 2 Table 1 Absolute M aximum Ratings Ta = 25°C

Contextual Info: H ITACHI 2SC5058 -Silicon NPN Triple Diffused Planar Application T O -3 P L Character display horizontal deflection output Features • High speed switching tf < 0 .3 fisec • High breakdown voltage V C BO = 1700 V 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Ta = 25°C

Contextual Info: 2SC5050 Silicon NPN Epitaxial HITACHI Application VH F / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG - 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 M Hz Outline MPAK ! 1. Emitter 2 2- Base

2SC5058

Abstract: Hitachi DSA00498
Contextual Info: 2SC5058 Silicon NPN Triple Diffused Planar Application TO–3PL Character display horizontal deflection output Features • High speed switching tf ≤ 0.3 µsec • High breakdown voltage VCBO = 1700 V 1 1. Base 2. Collector 3. Emitter 2 3 Absolute Maximum Ratings Ta = 25°C

96-115-B352

Abstract: 2SA1900 2SC5053 B352
Contextual Info: Transistors 2SA1900 2SC5053 96-115-B352 (96-196-D352) 297

Contextual Info: 2SC5057 Silicon NPN Triple Diffused Planar HITACHI Application HDTV horizontal deflection output Features • High breakdown voltage VCB0 = 1700 V Outline 1. B a s e 2. C o lle c to r 3. E m itte r 2SC5057 Absolute Maximum Ratings Ta = 25 °C Item Sym bol

Hitachi DSA002756

Contextual Info: 2SC5050 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline 2SC5050 Absolute Maximum Ratings Ta = 25°C

Contextual Info: 2SC5057 Silicon NPN Triple Diffused Planar HITACHI Application HDTV horizontal deflection output Features • High breakdown voltage VCB0= 1700 V Outline 1. B a se 2. C o lle c to r 3. E m itte r 2SC5057 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings

2SA1899

Abstract: 2SC5052
Contextual Info: TOSHIBA 2SA1899 2 S A 1 899 TO SH IBA TRANSISTOR PO W E R A M PLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 2.7MAX. DRIVER STAGE AM PLIFIER APPLICATIONS. 3.8 • Complementary to 2SC5052. ailFs M A X IM U M RATINGS (Ta = 25°C)

2SA675

Abstract: 2sc1279 2SA685 2N6734 2N6735 2SA749 2SC505 2SC506 2SC507 transistors 2SA749
Contextual Info: High Voltage Transistors TYFE NO. fO IA RITY CASE MAXIM UM RATINGS P4 IC VCEO ICM* VCEÄ* mA (V) (mW) 2N6734 2N6735 ZSA637 2SA639 2SA675 P P P P P TO-237A TO-237A TO* IS TO-92B TOW B 2500G 25000 300 200 250 100 2SA685 2SA749 2SC505 2SC306 2SC507 P P N N