PN222A
Abstract: 2N2222A TO-92 BSR14 2N3904 TO-92 type PN544 TN2219 2NS904 MPS6574 NPN transistor 2N2222A in T0-92 package Transistor 2N2222A
Contextual Info: NATL SEMICOND DISCRETE SEE D • bSQ113Q 0D37773 S ■ T-Z7-0! NPN General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Min V Cbo(V) Min Min Max Ic/V c (mA/V) Ft (MHz) Min PN3566 PN3641 PN3643 PN4141 PN4142 PN5449 TN2219 30 30 30 30 30 30 30
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bs011300d37773pn3566pn3641+15pn3643pn4141pn4142pn5449tn2219o-237pn222a2n2222a to-92bsr142n3904 to-92 typepn5442ns904mps6574npn transistor 2n2222a in t0-92 packagetransistor 2n2222a
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nsdu10
Abstract: nse458 NSD134
Contextual Info: NATL SEMICOND DISCRETE 52E D • bSQ113Q 0D377flb 3 ■ 7 ~ 2 ~7~ £ / NPN Medium Power Transistors by Ascending Vceo (Continued) Part No. VCeo (V) Min Hfe @ lc/Vce Max (mA/V) Vce (sat) (V) Max •c/lb (mA)/(mA) 10/20 1,0 20 TO-92 Package PN7055 220 40 D40P5
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bsq113q0d377flbpn7055d40p5+92n34402n65932n67122n67222n673492pe488nsdu10nse458nsd134
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MMBF4119
Abstract: PN4118 MMBF4117 MMBF4118 PN4117 PN4119
Contextual Info: e? S e m i c o n d u c t o r " PN4117 PN4118 PN4119 MMBF4117 MMBF4118 MMBF4119 SOT-23 Mark: 6 1 A /6 1 C /6 1 E N-Channel Switch T h is d e v ic e is d e sig n e d for low current D C an d a u d io app licatio ns. T h e s e d e v ic e s p rovide ex ce lle n t p erform an ce a s input s ta g e s for
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pn4117pn4118pn4119mmbf4117+5mmbf4118mmbf4119ot-23g1a/61c/61es01130
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PN4258
Abstract: process 65
Contextual Info: PN4258 I MMBT4258 t? D iscrete POW ER & S ig n a l Technologies National Semiconductor'" MMBT4258 PN4258 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings*
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BSS84
Abstract: ROB SOT23 BSS110
Contextual Info: National Semiconductor~ June 1995 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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bss84bss110b5011300q401fl3+1rob sot23
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NDS9943
Abstract: 56 pF CH N-8C
Contextual Info: N a t ion a I Semiconductor" M ay 1996 NDS9943 Dual N & P-Channei Enhancement Mode Field Effect Transistor General Description Features These du a l N- and P-Channel enhancem ent m ode p o w e r fie ld effect transistors are produced using N a tio n a l's p ro p rie ta ry, high cell density, DMOS
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nds9943bsd113g0d400q256 pf ch+1n-8c
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"NPN Transistors" 2n3567
Abstract: NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06
Contextual Info: NPN Transistors NATL S e m iS o n d u c t o r VCER* v CEO V Min M e d iu m P o w e r 'c e s ' hFE •cBOg, VCB @ *C & VCE (nA) (V) Min Max (mA) (V) Max VCbo (V) Min 2N699 TO-39 120 60 5 2 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40
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2n6992n16132n17112n1890+13to-202tn3742to-237npn transistors" 2n3567nse459nsdu05nsd4582n6718 to-2372n35692n65932n53362n3567mpsw06
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