TN2219 Search Results

tn637

Abstract: TN2219 TN2219A TN2270 TN3019 TN3020 TN3053 TN368 TN3742 TN391
Contextual Info: TO*237 Plastic Package Translators NPN Maximum Ratings Type No. TN2219 TN2219A TN2270 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO ^CEO ^EBO Pd (V) Min (V) Min (V) Min (W) Tc=25°c 60 30 5 0.75 75 60 40 45 6 7 Ô.75 0.75 (A) (A)

Contextual Info: ^ y i C Q N P U C T O R -m TN2219A ' C TO-226 B E NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch req jiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings*

PN2222A

Abstract: TN2219A
Contextual Info: N TN2219A C TO-226 BE NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

PN222A

Abstract: 2N2222A TO-92 BSR14 2N3904 TO-92 type PN544 TN2219 2NS904 MPS6574 NPN transistor 2N2222A in T0-92 package Transistor 2N2222A
Contextual Info: NATL SEMICOND DISCRETE SEE D • bSQ113Q 0D37773 S ■ T-Z7-0! NPN General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Min V Cbo(V) Min Min Max Ic/V c (mA/V) Ft (MHz) Min PN3566 PN3641 PN3643 PN4141 PN4142 PN5449 TN2219 30 30 30 30 30 30 30

Contextual Info: TN2219A FAIRCHILD S E M IC O N D U C T O R TN2219A NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum RatinQS

TN2219A

Abstract: PN2222A
Contextual Info: TN2219A _ D iscrete P O W E R & S ig n a l Technologies National f i S e m i c o n d u c t o r “ TN2219A NPN General Purpose Amplifier T h is d e v ic e is for u s e as a m ed iu m p o w e r am p lifie r a n d sw itch requiring c o lle c to r c u rre n ts u p to 5 0 0 m A . S o u rc e d fro m P ro c e s s 1 9 . S e e

MMBT4402

Abstract: 2N2907 SOT-23 tn2905 PN4121 TIS97 pn4122 TN2219A MARKING FY T0-92 2N2907 TO-92
Contextual Info: bflE T> m bS01130 □□3TS2D General Purpose Amplifiers and Switches continued Devices V CEO(sutt) 40 f*FE lc (Volts) Min lC Min Max mA PN3567 500 40 120 PN3569 500 100 TIS97 200 TN2219A 500 NPN PNP NATL SENICOND (DISCRETE) fT @ lc (mA) Max NF (dB) Max

PN2222A

Abstract: TN2219A
Contextual Info: TN2219A TN2219A C TO-226 B E NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

tn2219a

Abstract: TN2222
Contextual Info: TN2219A TN2219A TN2222A C B TO-226 E NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings*

TIS90

Abstract: MPS6566 TIS97
Contextual Info: NATL SEMICOND DISCRETE 22E D • bS01130 D03777M 7 ■ NPN General Purpose Transistors by Ascending Vceo (continued) • H,e Ft (MHz) Min Vceo (V) VCbo(V) Min Min Min Max (mA/V) PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 40 40 40 40 40 40 50 40 40 100 100

Contextual Info: This I tr Material Ln O NPN General Purpose Amplifiers and Switches b -J t-> LU Copyrighted a a a Device No. TN2219A •c a Case Style V CBO V TO-226 99 CEO ^EBO (V) Min (V) Min (V) Min 75 40 6 'cBO V (nA)@ “ Max 10 60 -r tr JT By J3 2N3903 TO-92 (92)

2N2210

Abstract: TIS92 TN2218A transistor 2N2210 2N3827 PN3694 TIS90 2N2270 2N2586 2N5962
Contextual Info: NATL SEMICOND DISCRETE 5SE D • bS01130 D037774 7 ■ NPN General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Vcbo (V) Min Min Min Max (mA/V) PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 40 40 40 40 40 40 50 40 40 100 100 100 250 40 100 200 300

TN2222

Contextual Info: TN2219A TN2219A TN2222A C TO-226 B E NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings*

PN2222A

Abstract: TN2219A
Contextual Info: TN2219A C TO-226 BE NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

TN2222

Abstract: TN2219A CBVK741B019 F63TNR PN2222A PN2222N TN2222A transistor A1 HB
Contextual Info: TN2219A TN2219A TN2222A C TO-226 B E NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings*

T1P42C

Contextual Info: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN

MPSD05

Abstract: MPSA05 MPSA06 MPSA55 MPSA56 MPSD55 MSB492 PN2221 PN2221A PN2906
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY MPSA05 MPSA06 MPSA55 MPSA56 MPSD05 N N P P N MAXIMUM RATINGS CASE TO-92A TO-92A TO-92A TO-92A TO-92A Pd IC VCEO mW (A) (V) 625 625 625 625 350 0.5 0.5 0.5 0.5 0.5 60 80 60 80 25 HFE min 50 50 50 50

2N6730

Abstract: 2N6719 2N6714 2N6715 2N6716 2N6717 2N6718 2N6726 2N6727 2N6728
Contextual Info: Power Transistors TO-237 Case Ò Z TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (mA) MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250

pn2222

Abstract: pn2907 NSDU01 2N4125 TN2219 "device marking" BC213 BC214 MPSW01A MPSW51A
Contextual Info: VCEO smt (Volts) Min 30 Devices PNP Nf>N M PSW 01A M PSW 51A NSDU01 if t iiliilS l: ; . ' •" . • ••• fr@ l h f j O lc •c (m A) Max mA (MHz) NF Package P D(ftnfe) (<nW) Max Min 1000 50 1000 50 50 TO-226 1000 1000 60 100 50 50 T0-202(55) 1333 Min

CENW64

Abstract: 2N6714 2N6730 2N6715 2N6716 2N6717 2N6718 2N6719 2N6726 2N6727
Contextual Info: Pow er T ran sistors TO-237 Case Z Ò TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic i VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (V) (mA) MAX (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50

2N6718

Abstract: 2N6719 ATX smps troubleshooting 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722
Contextual Info: Power Transistors TO-237 Case TYPE NO. IC PD BVCBO V MIN BVCEO *BVCES (V) MIN (A) MAX (W) hFE @ IC VCE(SAT) @ IC MIN MAX fT (mA) (V) MAX (mA) (MHz) MIN 250 1,000 0.5 1,000 50 250 1,000 0.5 1,000 50 50 250 250 0.35 250 50 80 50 250 250 0.35 250 50 100 100

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

c546b

Abstract: c557b of bc 237 b C547B c558b BC 9014 ba W61C c 557b 082BC w61b
Contextual Info: NPN General Purpose Amplifiers & Switches Device No. [Mark] B C W65C [ED ] Case Style TO-236 49 V CEO (V) Min 32 B C X 58 TO-92 (97) 32 BSR14 [U8] TO-236 (49) 40 V CBO VCES* (V) Min 60 75 V EBO (V) Min 5 I CBO ICES* (nA) Max 20* @ VCB (V) 32 TO-236 (49)

PNP 3-224

Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
Contextual Info: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11