ZTX650 Search Results

ZTX650

Abstract: ZTX651 FERRANTI SE60 transistor a7n ZTX652 ZTX653 Scans-00107861
Contextual Info: FERRANTI $ semiconductors ZTX650 ZTX651 ZTX652 ZTX653 N PN S ilic o n P lan ar M edium P o w e r T ra n sisto rs FEATURES • 1.5W Power dissipation at Tamb = 25*Cf • • • • • • • • 2A continuous lc Excellent gain characteristics to 2A High V CE0: up to 100 volts

BC337B

Abstract: m 60 n 03 g10 BC327C
Contextual Info: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA

BO 241 A

Contextual Info: NPN SILICON PLANAR M EDIUM POWER TRANSISTORS ZTX650 ZTX651 ISSU E 2 - J U L Y 94_ FEATURES * 60 Volt V CE0 * 2 Am p continuous current * Low saturation voltage * Ptot= l Watt E E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS.

ztx651

Abstract: ZTX650 ztx651 equivalent ztx650 equivalent ZTX651-NPN transistor equivalent ZTX651 DSA003771
Contextual Info: ZTX650 ZTX651 PARAMETER ZTX650 SYMBOL MIN. TYP. 140 ZTX651 MAX. MIN. TYP. 175 140 UNIT CONDITIONS. MAX. 175 MHz Transition Frequency fT Switching Times ton 45 45 ns toff 800 800 ns 30 Output Capacitance Cobo 30 IC=100mA, VCE=5V f=100MHz IC=500mA, VCC=10V IB1=IB2=50mA

smoke detector circuit using OP-AMP

Abstract: ZTX650 ZTX690B DN-12 BSS138 Ionising J-FET TRANSISTOR ztx650 equivalent ZTX750 ZTX790A
Contextual Info: Design Note 11 Issue 2 June 1995 Low Noise Audio Input Stage Design Note 12 Issue 2 June 1995 Ionising Smoke Detector +V 22M 10M R3 Vcc Sounder CMOS Gate Input Zs = 1 to 2R (typ) BSS138 R1 R2 Output Ionisation Chamber NPN - ZTX650 or ZTX690B Series PNP - ZTX750 or ZTX790A Series

ZTX650

Abstract: ZTX651 ZTX652 605A transistor a7n 100-C ZTX653 ferranti Scans-00107862
Contextual Info: FERRANTI ZTX650 ZTX651 ZTX652 ZTX653 $ semiconductors NPN Silicon Planar M e d iu m Power Transistors FEATURES • 1.5W Power dissipation at Tamb = 25*Cf • 2A continuous lc • Excellent gain characteristics to 2A • High V CE0: up to 100 volts • Low saturation voltages

ZTX650

Abstract: ztx651
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX650 ZTX651 ISSUE 2 -JU L Y 94_ FEATURES * 60 Volt V CE0 * 2 A m p continuous current * Low saturation voltage * r ,o t = 1 W a t t ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage

BY206

Abstract: inverter schematic BY206 diode 12v inverter circuit inverter 12v inverter circuit design schematic FX3437 simple inverter schematic circuit frequency inverter schematic Power INVERTER schematic circuit
Contextual Info: Design Note 28 Issue 2 January 1996 6W Inverter for MOS Logic supplies The inverter is a simple push-pull circuit which takes advantage of the high curre nt handling capability of the ZTX650 range. It oscillates at a frequency of approximately 25kHz to allow it to use a very small transformer

ZTX651

Abstract: ztx650
Contextual Info: ZTX650 Not Recommended for New Design Please Use ZTX651 ZTX650 ZTX651 PARAMETER ZTX650 SYMBOL MIN. TYP. 140 ZTX651 MAX. MIN. TYP. 175 140 UNIT CONDITIONS. MAX. 175 MHz Transition Frequency fT Switching Times ton 45 45 ns toff 800 800 ns 30 Output Capacitance Cobo

BC337B

Abstract: BC338B BC338C BC327B BC328B BC337C ZTX550 BFV52 ZTX751 BFY50
Contextual Info: ELEC TRIC AL CHARACTERISTICS N.P.N. M E D IU M POW ER h "ht V cbo VcEO ICBC Min. Min. Max.atVcB @ lc Dice Type V V nA V Min. Max. m A ZTX653 ZTX453 ZTX652 ZTX452 M P SA 0 6 ZTX651 ZTX451 BFY50 M P SA 0 5 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C BFV52 BC338A

Contextual Info: ZTX650 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)45è V(BR)CBO (V)60 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0’ Maximum Operating Temp (øC) I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

m 60 n 03 g10

Contextual Info: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60

ZTX753

Abstract: ZTX750 ZTX650 ZTX752 6.8j 100v Scans-00107864 c6011 Ferranti Semiconductors SE74 ZTX751
Contextual Info: * FERRANTI semiconductors ZTX750 ZTX751 ZTX752 ZTX753 PNP Silicon Planar M e d i u m P o w e r Transistors FEATURES • 1.5W Pow er dissipation at T amb = 2 5 *C t • 2A con tin uous lc • Excellent gain characteristics to 2A • H igh V C E0 : up to 100 volts

ZTX751

Abstract: ZTX651 ZTX551 ZTX753 ZTX337 ZTX452 MPSA06 MPSA56 ZTX453 ZTX454
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.

BC337b

Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment

ztx653

Abstract: 2TX650 SE 130 ztx651 ZTX652 ztx650
Contextual Info: NPN Silicon Planar Medium Power Transistors Z T X 650 ZTX651 ZTX652 ZTX653 FEATURES • 1 .5 W p o w e r d issipation a t T amb = 2 5 ° C * • 2 V co n tinu o u s ic • Excellent gain ch a ra cte ristics to 2A • High V CE0: up to 10 0 V • L o w sa tu ra tio n voltages

induction cooker fault finding diagrams

Abstract: enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer
Contextual Info: 03front order p1_3 1/29/02 3:01 PM C3 Page 1 components cables & connectors actives 18 57 semiconductors optoelectronics passives contents 72 81 87 91 capacitors resistors transformers, ferrites & inductors emc, filters & suppression electromechanical 92 120

MRF212

Abstract: b0507 MRF221 motorola diode b0106A B12 nec diode 2sc94 2n5861 2N4127 MRF603
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC92 2SC94 2N5590 2S01614 2S01614 TN3252 BlY21 2N5861 ~~g~~~~ 25 30 ZTX649 B0505 B0505 B0505 B0505•1 B0505·1 B0505·5 B0507 ~g~g~ 35 40 B0507-1 B0507·5 B0509 B0509 B0509 B0509-1 B0509-5 2N5413

BC338C

Abstract: ZTX452 MPSA06 MPSA56 ZTX453 ZTX454 ZTX455 ZTX651 ZTX652 ZTX653
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.

bc177

Abstract: BFS98 BFS59 ZTX452 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
Contextual Info: TABLE 2 : PNP GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal am plification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and OUTPUT ST A G ES, O SC ILLA TO RS, AND GEN ERAL PURPO SE

flash trigger transformer

Abstract: xenon inverter circuit xenon light source circuit diagram flyback transformer 4kV Xenon Flash 6v 400V, DC-AC INVERTER light source xenon flash tube xenon tube "Flash tube" pulse transformer transistor
Contextual Info: Design Note 25 Issue 2 October 1995 Flash Gun Inverter Using Super E-Line Bipolar Transistors RM 6 CORES 0.15mm GAP D3 BY206GP 10 R1 390 128 23 NEON C1 6V 100uF 10V R2 68 ZTX 300 T2 C3 750uF 350V ZTX 650 TR1 TR2 R4 1M D2 1N4148 0.1uF D1 R3 1N4148 680K R5 3M

ZTX651

Abstract: ZTX692B ZTX650 ZTX652 ZTX749 ZTX750 ZTX751 ZTX752 ZTX753 Scans-00107860
Contextual Info: TABLE 8 : NPN/PNP SUPER E-LINE TYPES These devices offer the ultimate performance for TO -9 2 style package. They have been designed to operate and provide useful gain at current levels up to 6 A with power dissipation capabilities in excess of 1W at 2 5 ° C ambient temperature.

2N1893

Abstract: 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military