ZT92 Search Results

Contextual Info: ZT92 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016) 0.53 (0.021)

ZT92

Contextual Info: ZT92 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016) 0.53 (0.021)

Contextual Info: ZT92 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016) 0.53 (0.021)

2N2222A zetex

Contextual Info: ZETEX S E M I C O N D U C T O R S IbE D • TTVDSTfl OOObfl4ö ñ ■ ZETB METAL CAN SPECIFICATIONS ~rz°i - Z 3 NPN LOW NOISE Type ZT91 ZT92 BSY55 ZT93 ZT86 ZT88 ZT89 ZT90 ZT95 BCY65E 2N2484 ZT94 ZT83 ZT84 BCY59 BCY56 2N930 2N2219A 2N2222A ZT81 ZT82 BCY58

2N222A

Abstract: N2222 zs90 2N222 BFS61 ZS150 2n3600 BFS59 2N222-A BFX84
Contextual Info: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n Maximum Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A BFS59 BFS60 BFS61 BFX84 BFX8S BFY50 BFY51 BFY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT86 ZT87 ZT88 ZT89 ZT90 ZT91 ZT92

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Contextual Info: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K

TO-39 1000 V

Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

bc140

Abstract: 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN GENERAL PURPOSE TA B LE1 NPN SILICON PLANAR G EN ER A L P U R P O S E T R A N S IST O R S The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,

bc140

Abstract: 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

BC338C

Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

BSY55

Abstract: Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5

bc140

Abstract: 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military

BSY55

Abstract: Scans-00107830 2N2222A zetex BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military

bcy79 equivalent

Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

2N4427 equivalent

Abstract: ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

Contextual Info: PLESSEY SEI1IC0ND/DISCRETE | TS DÌf| 752D533 O D D ^ E S 3 95D 04925 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /D I S C R E T E T? Z D L .J NPN LOW NOISE TABLE 5 - NPN SILICON PLANAR LOW NOISE TRANSISTORS i The transistors shown in this table are characterised for low noise, low level amplification and are particularly

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

BC239C equivalent

Abstract: BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

transistor t2a 82

Abstract: ZT1482 ZT1484 2N2223 t2a transistor ZT1490 n3055 2N3055 TRANSISTOR 2n3055 2N3440
Contextual Info: SILICON TRANSISTORS High Voltage n-p-n The transistors listed in the table below have maximum coliector-emitter voltage ratings of 100 volts or higher and may therefore be used in applications where high voltages are encountered. Further information on these transistors can be found on the page indicated in the last column of the table, or on request from Ferranti Ltd.

2N4036

Abstract: TRANSISTOR BC140 transistor 2N2219 BUY90 ZT Ferranti 2N2102 2N2405 2N2708 2N3866 2N4427
Contextual Info: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in these tables are designed for high frequency operation Amplifier and Oscillator applications. The tables should be referred to in conjunction with the RF Section which contains details

1K transistor

Abstract: BCY56 BCY65E BSY55 ZT211 ZT86 ZT88 ZT89 ZT90 ZT91
Contextual Info: NPN LOW NOISE TABLE 5 - NPN SILICO N PLA NA R LOW N O ISE T R A N S IS T O R S The tran sisto rs s h o w n in this table are characterised for lo w noise, low level am plification and are particularly suitable for audio pre-amplifiers a s well a s universal applications.

BCY56

Abstract: BCY59A 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5

c5248

Abstract: d1g1 IP78T12ACT IP78T12CT
Contextual Info: e E M e SEME J LAB ' Y l - U-lo 'P78T12CT ' ^ IP78T12ACT 12 VOLT, 3 AMP POSITIVE VOLTAGE REGULATOR MECHANICAL DATA Dimensions in mm Inches T Package — TO -220 Plastic Package ¿.«Ss (US I0.40Qsm i> (0.175 = 6C1CT FEATURES : (oûsû* 0.00» c x rr * 0.04%/V LINE REGULATION