ZTX752 Search Results

ZTX753

Abstract: ZTX750 ZTX650 ZTX752 6.8j 100v Scans-00107864 c6011 Ferranti Semiconductors SE74 ZTX751
Contextual Info: * FERRANTI semiconductors ZTX750 ZTX751 ZTX752 ZTX753 PNP Silicon Planar M e d i u m P o w e r Transistors FEATURES • 1.5W Pow er dissipation at T amb = 2 5 *C t • 2A con tin uous lc • Excellent gain characteristics to 2A • H igh V C E0 : up to 100 volts

ZTX753

Abstract: T092 ZTX752 ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES DSARS0022094.
Contextual Info: I PNP SILICON PLANAR MEDIUM I POWER TRANSISTORS I ZTX752 ZTX753 II 1 ISSUE 2- JULY 94 FEATURES ‘ 100 volt VCEC * 2 Amp continuous * Low saturation * PtOt=1 ‘Watt current voltage E-Line 4BSOLUTE MAXIMUM 1 RATINGS. SYMBOL PARAMETER — Collector-Base Voltage

ztx753

Abstract: ZTX752 ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES DSA2IH00224737.
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSU E 2 - J U L Y 94 FEATURES * 100 V olt V CE0 * 2 A m p c o n tin u o u s current * L o w saturation v o lta ge * Ptot= 1 W a t t ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BOL ZTX752 ZTX753 U N IT V CBO -100

ztx753

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX752 ZTX753 ISSUE 2 – JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX752 ZTX753 UNIT

ZTX753

Abstract: ztx752 ZTX753 equivalent ZTX752 equivalent ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES DSASW0011155.
Contextual Info: ZTX752 Not Recommended for New Design Please Use ZTX753 ZTX752 ZTX753 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . ZTX752 ZTX753 PARAMETER SYMBOL Transition Frequency fT Switching Times ton 40 40 ns toff 600 600 ns Output Capacitance MIN. TYP. 100 MAX. MIN. TYP.

ztx753

Abstract: ZTX752 ztx751 SE163
Contextual Info: PNP Silicon Planar Medium Power Transistors ZTX750 ZTX752 ZTX751 ZTX753 FEA T U R E S • • • • • • • • • 1.5W power dissipation at T atnb = 2 5 ° C * 2V continuous Iq Excellent gain characteristics to 2A High V CE0: up to 100V Low saturation voltages

Contextual Info: ZTX752 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80è V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175 I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

ZTX750

Abstract: ZTX650 100-C ZTX751 ZTX752 ZTX753 ferranti c6011 ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES SE74
Contextual Info: * FERRANTI semiconductors ZTX750 ZTX751 ZTX752 ZTX753 PNP Silicon Planar M e d i u m P o w e r Transistors FEATURES • 1.5W Pow er dissipation a t Tamb = 25*C t • 2A continuous lc • • Excellent gain characteristics to 2A High V CE0: up to 100 volts

ZTX753 equivalent

Abstract: ZTX753 ZTX752 ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES DSA003775
Contextual Info: ZTX752 ZTX753 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . ZTX752 ZTX753 PARAMETER SYMBOL Transition Frequency fT Switching Times ton 40 40 ns toff 600 600 ns Output Capacitance MIN. TYP. 100 MAX. MIN. TYP. 140 100 140 UNIT CONDITIONS. MHz 30 Cobo MAX. 30

m 60 n 03 g10

Contextual Info: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60

ZTX751

Abstract: ZTX651 ZTX551 ZTX753 ZTX337 ZTX452 MPSA06 MPSA56 ZTX453 ZTX454
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.

BC338C

Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

BC337b

Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment

b0348

Abstract: 2N5333 motorola B0238 SGS-Ates SML3511 NSOU56 2N5322 motorola B0818 MPS-U56 mpsu56
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 SML69503 SML69511 SML69603 SML69611 SML3503 SML3507 SML3511 SML3515 ~b~~~~4 25 30 SOT3554 SOT3554 B0638 SOT3551 SOT3551 SOT3551 SOT3577 SOT3577 ~~:g77 35 40 BLX40 BLX40 SOT69503 SOT69503 SOT69603 SOT69603

BC337B

Abstract: m 60 n 03 g10 BC327C
Contextual Info: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA

2TX750

Abstract: VCS-60V ZTX750 ZTX751 ZTX752 ZTX753
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IS S U E 2 - J U L Y 94_ FEATURES * 60 Volt V,CEO 2 A m p continuous current Lo w saturation voltage P ,o t = 1 W a t t ABSOLUTE M A X IM U M RATINGS. ZTX750 ZTX751 UNIT V CB0 -60 -80 V

mn2510

Abstract: 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 ZTX617 TRANSISTOR REPLACEMENT GUIDE Replacement SANKEN mn2510 2sc5198 cross references 2SA1941 "cross reference"
Contextual Info: Low voltage power bipolar transistors Selection guide October 2007 www.st.com/bipolar SOT-223 Part number NPN PNP STN878 STN724 STN690A STN749 STN888 STN826 STN790A 2STN2540 2STN1550 2STN1360 2STN2360 STN1802 STN851 STN951* STN715 STN817A IC [A] VCE [V] VCE sat @

BC338C

Abstract: ZTX452 MPSA06 MPSA56 ZTX453 ZTX454 ZTX455 ZTX651 ZTX652 ZTX653
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.

bc177

Abstract: BFS98 BFS59 ZTX452 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
Contextual Info: TABLE 2 : PNP GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal am plification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and OUTPUT ST A G ES, O SC ILLA TO RS, AND GEN ERAL PURPO SE

ZTX651

Abstract: ZTX692B ZTX650 ZTX652 ZTX749 ZTX750 ZTX751 ZTX752 ZTX753 Scans-00107860
Contextual Info: TABLE 8 : NPN/PNP SUPER E-LINE TYPES These devices offer the ultimate performance for TO -9 2 style package. They have been designed to operate and provide useful gain at current levels up to 6 A with power dissipation capabilities in excess of 1W at 2 5 ° C ambient temperature.

2N1893

Abstract: 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

ZT Ferranti

Abstract: BF4935P SE-169 TX-550 X752 X449
Contextual Info: ZETEX S E M I C O N D U C T O R S =IS]> D • clci7 Q S 78 0 0 0 S 0 7 S 1 M Z E T B ~T-Tl-Ol Super E-line transistors TABLE 1 : NPN/PNP SUPER E-LINE These devices offer the ultimate performance for TQ-92 style package, they have been designed to operate and provide useful gain at current