ZTX750 Search Results

ZTX753

Abstract: ZTX750 ZTX650 ZTX752 6.8j 100v Scans-00107864 c6011 Ferranti Semiconductors SE74 ZTX751
Contextual Info: * FERRANTI semiconductors ZTX750 ZTX751 ZTX752 ZTX753 PNP Silicon Planar M e d i u m P o w e r Transistors FEATURES • 1.5W Pow er dissipation at T amb = 2 5 *C t • 2A con tin uous lc • Excellent gain characteristics to 2A • H igh V C E0 : up to 100 volts

ztx750

Abstract: ztx751
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX750 ZTX751 IS S U E 2 - J U L Y 94_ FE A T U R E S * * 60 Volt V CE0 2 Am p continuous current * Low saturation voltage * P ,o t = lW a t t ABSOLUTE MAXIMUM RATINGS. PARAMETER

2TX750

Abstract: VCS-60V ZTX750 ZTX751 ZTX752 ZTX753
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IS S U E 2 - J U L Y 94_ FEATURES * 60 Volt V,CEO 2 A m p continuous current Lo w saturation voltage P ,o t = 1 W a t t ABSOLUTE M A X IM U M RATINGS. ZTX750 ZTX751 UNIT V CB0 -60 -80 V

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX750 ZTX751 ISSUE 3 – JULY 2005 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL ZTX750 ZTX751

ZTX751

Abstract: O0001 T092 ZTX750 IC225 CM 3258
Contextual Info: ZTX750 ZTX751 PNP SILICON PLANAR MEDIUM ISSUE 2- POWER TRANSISTORS JULY I I 94 FEATURES * 60 Volt VCEO * 2 Amp * Low saturation * P,= 1 Watt }2 conti luous current voltage ,() ~f B~< / L- E-Line T092 ~BSOLUTE MAXIMUM RATINGS. PARAMETER —.— —. Collector-Base

smoke detector circuit using OP-AMP

Abstract: ZTX650 ZTX690B DN-12 BSS138 Ionising J-FET TRANSISTOR ztx650 equivalent ZTX750 ZTX790A
Contextual Info: Design Note 11 Issue 2 June 1995 Low Noise Audio Input Stage Design Note 12 Issue 2 June 1995 Ionising Smoke Detector +V 22M 10M R3 Vcc Sounder CMOS Gate Input Zs = 1 to 2R (typ) BSS138 R1 R2 Output Ionisation Chamber NPN - ZTX650 or ZTX690B Series PNP - ZTX750 or ZTX790A Series

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX750 ZTX751 I S S U E 2 - J U L Y 94_ FEATURES * 60 Volt V CE0 * 2 A m p c o n tin u o u s current * L o w saturation voltage * P ,o f1 W a tt E-Line T 0 9 2 Compatible ABSOLUTE M A XIM U M RATINGS.

Contextual Info: ZTX750 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)45è V(BR)CBO (V)60 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

ZTX751

Abstract: ZTX750
Contextual Info: ZTX750 Not Recommended for New Design Please Use ZTX751 ZTX750 ZTX751 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER ZTX750 SYMBOL MIN. TYP. Transition Frequency fT Switching Times

ZTX751

Abstract: ZTX750 DSA003774
Contextual Info: ZTX750 ZTX751 ISSUE 2 – JULY 94 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot= 1 Watt ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Transition Frequency fT Switching Times ton toff

ztx753

Abstract: ZTX752 ztx751 SE163
Contextual Info: PNP Silicon Planar Medium Power Transistors ZTX750 ZTX752 ZTX751 ZTX753 FEA T U R E S • • • • • • • • • 1.5W power dissipation at T atnb = 2 5 ° C * 2V continuous Iq Excellent gain characteristics to 2A High V CE0: up to 100V Low saturation voltages

ZTX751

Abstract: ZTX750 ztx751 equivalent VCB-45V
Contextual Info: ZTX750 ZTX751 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER ZTX750 SYMBOL MIN. TYP. Transition Frequency fT Switching Times ton toff Output Capacitance 100 ZTX751 MAX MIN. TYP. .

ZTX750

Abstract: ZTX650 100-C ZTX751 ZTX752 ZTX753 ferranti c6011 ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES SE74
Contextual Info: * FERRANTI semiconductors ZTX750 ZTX751 ZTX752 ZTX753 PNP Silicon Planar M e d i u m P o w e r Transistors FEATURES • 1.5W Pow er dissipation a t Tamb = 25*C t • 2A continuous lc • • Excellent gain characteristics to 2A High V CE0: up to 100 volts

m 60 n 03 g10

Contextual Info: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60

BC338C

Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

BC337b

Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment

2N2222A zetex

Abstract: MAX715CNG motorola b6n MAX714 MAX715CWG MAX716CWI MAX716EWI MAX714CPE MAX714CWE MAX715
Contextual Info: 1 9 -4 5 0 7 ; R e v . 1; 3 /9 2 B a ttery-P ow ered Supply S y s te m s The M AX716 com bines circuitry for four low-dropout linear regulators, three D C -D C sw itching regulators, and powersu pervisory functions on a single IC. All but one regulator output is logic controlled so that loads m ay be shut down

BC337B

Abstract: m 60 n 03 g10 BC327C
Contextual Info: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA

induction cooker fault finding diagrams

Abstract: enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer
Contextual Info: 03front order p1_3 1/29/02 3:01 PM C3 Page 1 components cables & connectors actives 18 57 semiconductors optoelectronics passives contents 72 81 87 91 capacitors resistors transformers, ferrites & inductors emc, filters & suppression electromechanical 92 120

transorb

Abstract: 77930-a7 fet 2n2222 77040-A7 77438-A7 transorb applications notes CROSS REF FET crane electronic control Transient transorb diode
Contextual Info: Application Note - Interpoint Crane Aerospace & Electronics Power Solutions Transient Suppression: Switching Power Supplies Crane Aerospace & Electronics Power Solutions Transient Suppression: Switching Power Supplies Application Note Although the concepts stated are universal, this application note was written specifically for Interpoint products.

ztx750 equivalent

Abstract: DAC IC 0808 749 MOSFET TRANSISTOR motorola SMD10P05L DAC ic 0808 pin diagram MAX749CPA dac IC 0808 circuit diagram MAX749 MAX749CSA MAX749EPA
Contextual Info: 19-0143; Rev 1; 2/95 NUAL KIT MA ATION HEET S A EVALU T A WS D FOLLO Digitally Adjustable LCD Bias Supply _Applications Notebook Computers _Features ♦ +2.0V to +6.0V Input Voltage Range ♦ Flexible Control of Output Voltage:

CD54-470N

Abstract: Schematic of 100K digital potentiometer resistor 1.2M MAX749CSA SURFACE MOUNT RESISTOR 1N5819 595D EC10QS04 MAX749 MAX749EVKIT-SO
Contextual Info: MAX749 Evaluation Kit _Component List DESIGNATION QTY DESCRIPTION C1 1 0.001µF surface-mount capacitor C2 1 15µF, 35V surface-mount tantalum capacitor. Sprague 595D 156 X0 035 D 7. C3 1 15µF, 10V surface-mount tantalum capacitor. Sprague 595D 156 X0 010 C 7.

BC338C

Abstract: ZTX452 MPSA06 MPSA56 ZTX453 ZTX454 ZTX455 ZTX651 ZTX652 ZTX653
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.