25FLC Search Results

247Q

Abstract: PALC16R6-25WC carrier 40QMB CERAMIC LEADLESS CHIP CARRIER PALC16R4-35WC 16L8 16R4 16R6 16R8 PALC20
Contextual Info: PAL C20 Series CYPRESS Features • • CMOS EPROM technology for repro­ grammability • High performance at quarter power Reprogrammable CMOS PALC 16L8,16R8, 16R6, 16R4 High reliability — Proven EPROM technology — > 1500V input protection from electrostatic discharge

AM25LS2519

Contextual Info: Am25LS2519 \ Am 25LS2519 Quad Register with Two Independently Controlled Three-State Outputs DISTINCTIVE CHARACTERISTICS • • • • Buffered com m on asynchronous clear S e p arate buffered com m on output enable for each set of outputs Tw o sets o f fully buffered three-state outputs

Contextual Info: 2SK3444 T O S H IB A TOSHIBA FSELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE { *-M Q S V 2S K3444 TENTATIVE IN D U S T R IA L HIGH SPEGO SWITCHING APPLICATIONS A P P L IC A T IO N S _UNIT : rrm CHOPPER REGULATION DC-DC CONVERTER AND MOTOR DRIVE APPLICATI OHS

Contextual Info: HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS E L 2072C 730 MHz Closed Loop Buffer F eatu res G eneral D escrip tion • 730 M Hz - 3 dB bandwidth 0.5 Vpp • 5 ns settling to 0.2% • Vs = ±5V @ 15 mA • Low distortion: HD2, HD3 of —65 dBc at 20 M Hz

Contextual Info: Features 32K x 8 Power-Switched and Reprogrammable PROM • Capable of withstanding > 4001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 25 ns commercial — 35 ns (military) • Low power — 275 mW (commercial)

RT3062

Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

B1151 Y

Abstract: b1151 -y MP2138 MP2143 2SB228 MP2139 2SB251 B1151 2SB250 2N391
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T

mb8417

Abstract: tc5516 MB8417A-12 MB8417A-12L MB8417A-15 MB8417A-15L
Contextual Info: FUJITSU MOS Memories • M B 8 4 1 7 A - 1 2 , M B 8 4 1 7 A - 1 2 L , M B 8 4 1 7 A - 1 5 , M B 8 4 1 7 A - 1 5 L CMOS 16,384-Bit Static Random Access Memory Description The F u jits u M B8417A is a 2048-w ord by 8 -b it s ta tic ra n d o m a c ­ ce s s m e m o ry fa b ric a te d w ith C M O S s itic o n g a te pro c e s s . The

CY7C344-25HC

Abstract: 74HC 7C344 C344 CY7C344 000713t Signal path designer IND20 MU2030 AC02X
Contextual Info: 4bE D SEMI CONDUCTOR D 2Sö^bb2 DD07132 ? Q C Y P ‘T ' & ' M - O l W s CYPRESS SEMICONDUCTOR CY7C344 32-Macrocell MAX EPLD Features Functional Description • High-performance, high-density re­ placement for TTL, 74HC, and custom logic • 32 macroceils, 64 expander product

LA4430

Abstract: RJFT MC 50AB
Contextual Info: LA4430 Nac3ó3c H it D254 4.5W 'Sx V 'Xd'? \jo.C363B ¿ / / ti it ti 4 , 5»V typ 50dB» flsar.^ X ’ * * • * -f -y *-tftA03 ■ ssm ^/ì "/ *r — / / / / ï J 4 '> a • S Ë P m ~ ^ r ^ r j t : V « & ¿>*10. . / / fc W *} U <T)X / / -Ü ",* h h re í í & / / :

TDC1038

Abstract: 1038n6c TDC1048
Contextual Info: A /D TDC1038 TDC1038 Monolithic Vìdeo A/D Converter 8-Bit, 20 Msps, Low Power Description The TDC1038 is a flash analog-to-digital converter capable of converting a video-speed signal into a stream of 8-bit digital words at 20 Msps MegaSamples Per Second . It is pin-for-pin compatible with the industry

transistor 2Sc 2053

Contextual Info: •'aMFrTrS-tfoâé! +3.3 V, +5 V, Adjustable Micropower Linear Voltage Regulators ANÀLOG D EV IC ES FEATURES Tri-Mode Operation '7: ; 3.3 V, 5 V Fixed or +1.3 V to +lë V Adjustable Low Power CMOS: 9 |iA max Quiescent Current High Current 100 mA Output '

IC 74164

Abstract: 74164 with ic PIN DIAGRAM pin diagram of ic 74164 ic 74ls164 AND SPECIFICATIONS 74164 truth table and pin diagram of IC 74164 LS164 74164 shift register IC 74164 14 PIN DIAGRAM IC 74164 PIN DIAGRAM
Contextual Info: 74164, L S I6 4 Shift Registers Signetics 8-Bit Serial-ln Parallel-Out Shift Register Product Specification Logic Products FEATURES • • • • Gated serial Data inputs Typical shift frequency of 36MHz Asynchronous Master Reset Fully buffered Clock and Data

c258

Abstract: CERAMIC LEADLESS CHIP CARRIER h67 YW PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC
Contextual Info: CY7C258 CY7C259 CYPRESS 2Kx 16 Reprogrammable State Machine PROM Features Functional Description • High speed: 100-MHz operation T h e CY7C258 and CY7C259 a re 2K x 16 C M O S P R O M s specifically designed for use in state m achine applications. — tc p — 10 ns

SC 82011

Contextual Info: EL4390C EL4390C Triple 80 MHz Video A m plifier with DC F e a tu r e s G e n e ra l D escrip tio n • 80 MHz —3 dB bandwidth for gains of 1 to 10 • 800 V / f x s slew rate • 15 MHz bandwidth flat to 0.1 dB • Excellent differential gain and phase • TTL/C M O S compatible DC

Contextual Info: CYPRESS UltraLogic 64-Macrocell Flash CPLD Device CPLD and is p art of the F lash37<M™ family of high-density, high­ speed CPLDs. Like all members of the F lash37(M family, the CY7C372i is de­ signed to bring the ease of use and high performance of the 22V10, as well as PCI

84-PIN

Abstract: CY7C341 CY7C341B
Contextual Info: CY7C341B ir CYPRESS . Features • 192 macrocells in 12 LABs • 8 dedicated inputs, 64 bidirectional I/O pin • Advanced 0.65-micron CMOS technology to increase performance • Programmable interconnect array • 384 expander product terms • Available in 84-pin HLCC, PLCC, and

PCA84C841

Abstract: PCF84C00 Philips IC14 MLB999 vp05 MC0172 84C640 MCD182 PCA84C644 84C441
Contextual Info: IN TE G R A TE D C IR C U ITS 84C44X; 84C64X; 84C84X 8-bit microcontrollers with O SD and V S T Product specification Supersedes data of November 1991 File under Integrated Circuits, IC14 October 1994 Philips Semiconductors PHILIPS PHILIPS 711002b OQfl 447b

zener 4b7

Contextual Info: EL2041/EL2041C SflE D • 312=1557 □□□2110 fill H E L A ELANTEC INC F eatu res G eneral D escrip tion • Open loop unity bandwidth—90 MHz • Unity gain stable • High gain—10k typ. • High slew rate—250 V/ju.s • Low offset voltage—0.5 mV typ.,

T-79-CX

Abstract: LM308AM power 22E LM308AJ power 22E analog RETS108AX
Contextual Info: LM108A/LM208A/LM308A NATL SEfllCOND L IN E A R SHE D • hS0H2H Q0b0270 T National Semiconductor LM108A/LM208A/LM308A Operational Amplifiers General Description introducing less error than devices like the 709 with 10 kn sources, integrators with drifts less than 500 jxV/sec and

Contextual Info: MOTOROLA SC XSTRS/R 12E D F I b3b?254 O O flS'm 7 | M A X IM U M R AT IN G S Symbol Value Unit VcES 30 Vdc Collector-Base Voltage Vc b o 30 Vdc Emitter-Base Voltage Ve s o 10 Vdc ic 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C R»j a 556 °C/W PD 300 mW 2.4

RFJ-2

Abstract: Opto P 721
Contextual Info: MOTOROLA SC DIODES/OPTO 3*1E D D b3b?2S5 0055^07 fl IMOT? N O T R E C O M M E N D E D FO R N EW D E S IG N S T - 3*7-21 MU10 PINI Unijunction Transistors S ilic o n A n n u lar Unijunction T ran sistors . .d e sign e d for econom ical, general purpose use in pulse, timing, oscillator and

lm607

Abstract: LM607CN LM607ACN LM607ACH LM607CH LM607AMH LM607B LM607A LM607AM LM607/LM607A/LM607B
Contextual Info: LM607/LM607A/LM607B National Semiconductor LM607/LM607A/LM607B Precision Operational Amplifier General Description Features The LM607 series of precision operational amplifiers are trimmed at wafer sort to extremely low values of offset volt­ age. Advanced circuit design and testing techniques allow

Contextual Info: /UHOU. i I/ o u / a u CY7C460 CY7C462 CY7C464 Revision: August 17,1994 F# CYPRESS Cascadable 8K x 9 FIFO Cascadable 16K x9F IF O Cascadable 32K x9F IF O Features Functional Description • 8K x 9 ,16K x 9 ,32K x 9 FIFO buffer memory • Asynchronous read/write