100TIA Search Results

MMB5551

Abstract: mmt5551 1BT55 MMBT5550 MMBT5551 T5551 MVBT5551
Contextual Info: MMBT5550 MMBT5551 High Voltage NPN Transistors E M IT E l M A X IM U M RATINGS Rating Col icdoi bmilitr Voilage Cofadof-Bastì voltage tmiLlûr Uaùü voilage Cül ICOlûr Cufrûril COMLiriutj S Symbol Vali.p V C EO vceo VEBO ic HO L6D 6.0 6DD Unit Vdc Vdc

PJ 0416 1v

Abstract: til 3010 1208FRAM 7S5SG15
Contextual Info: RAMTRON 4SE CORP D 7SSSG15 GGÜÜO^b 12D I RAH F M 1 2 0 8 F R A M M e m o ry r ^ lM T R O 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview N Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ CMOS Technology with Integrated Ferroelectric

Contextual Info: UCC1583 UCC2583 UCC3583 U IM IT R O O E Switch Mode Secondary Side Post Regulator FEATURES DESCRIPTION • Precision Secondary Side Post Regulation tor Multiple Output Power Supplies The UCC3583 is a synchronizable secondary side post regulator for preci­

Contextual Info: 19-0099; Rev 0; 10/92 + 3 V V o lta g e M o n ito rin g , L o w -C o s t, \iP S u p e rv is o ry C irc u its The MAX706P/R/S/T supervisory circuits provide the fol­ lowing four functions: 1 A reset output during power-up, pow er-dow n and brow nout conditions.

Contextual Info: iji H A R R IS HM-6564 S E M I C O N D U C T O R 8K X 8 ,16K X 4 CMOS RAM Module January 1992 Features Description • The HM-6564 is a 64K bit CMOS RAM. It consists of 16 HM-6504 4K x 1 CMOS RAMs, in leadless carriers, mounted on a ceramic substrate. The HM-6564 is configured as an

Contextual Info: M B Q E S 7 1 H Q Q S 5 E f i 7 a r r T 3 4 H H A S i s semiconductor C PRELIMINARY* Features , C 3 2 7 2 A 3 2 9 2 A Description Load Current Switching 600mA Suitable for Resistive or Inductive Loads Fault Mode Diagnostic Flag Output CA3292A Over-Voltage Zener Clamp

FMMT617

Abstract: FMMT-617 FMMT618 FMMT619 FMMT624 FMMT625 FMMT717 V12E
Contextual Info: SuperSOT FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 SOT23 NPN SILICON POWER TRANSISTORS SWITCHING ISSUE 3- NOVEMBER Id 1995 FEATURES ‘ 625mW POWER DISSIPATION * Ic CONT 3A * 12A Peak Pulse Current * Excellent HFE Characteristics * Extremely Low Saturation Voltage E.g. 8mV Typ.

1N4450

Abstract: BKC Semiconductors DSAIH0002560 1N6641
Contextual Info: Silicon Switching Diodes Use Advantages 1 1N6639 1N6640 1N6641 DO-35 Hard Glass Package High Rel. Voidless General purpose fast diodes with rugged voidless hard glass tungsten design. Able to replace lower power, less robust types like 1N4150-1 and 1N4450-1.

74ALVCH16373

Abstract: SSOP48 TSSOP48
Contextual Info: Philips Semiconductors Product specification 16-bit D-type transparent latch 3-State 74ALVCH16373 PIN CONFIGURATION FEATURES • W ide supply voltage range of 1.2V to 3.6V 1Ö E • Com plies with JEDEC standard no. 8-1A • CM OS low power consumption 48] 1LE

fnd display

Abstract: 74ALVT16501 SSOP56
Contextual Info: Philips Semiconductors Product specification 18-bit universal bus transceiver 3-State 74ALVT16501 FEATURES DESCRIPTION • 18-bit bidirectional bus interface The 74ALVT16501 is a high-perform ance BiCMOS product designed for V c c operation at 2.5V and 3.3V with I/O com patibility

74ALVT16821

Contextual Info: Philips Semiconductors Product specification 20-bit bus-interface D-type flip-flop; positive-edge trigger 3-State 7 . . . X/T iR ft9i FEATURES output drive. It is designed for V qc operation at 2.5V or 3.3V with I/O com patibility to 5V. • 20-bit positive-edge triggered register

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

njl5152

Abstract: NJL5152D NJL5151D l51 transistor NJL5I51D 20/njl5152
Contextual Info: NJL5151D/52D/53D M IN I MOLD T Y P E P H O T O C O U P L E R • GENERAL DESCRIPTION OUTLINE typ. Unit: mm OUTLINE (typ.) Unit: mm The N JL5 1 5 1 D series are small package dual-in-line photo couplers, which consist o f high power infrared emitting diode and high sensitve Si

Contextual Info: MITSUBISHI Neh POWER MOSFET FK10UM-12 HIGH-SPEED SWITCHING USE FK10UM-12 • V d s s . 6 00V • rDS ON (MAX) . 1 .1 8 0

Contextual Info: 4bE ì> HARRIS SEMICOND SECTOR £! m M3QS271 OGBTlôô E • H A S HM-65642/883 H L A J R F R IS S E M I C O N D U C T O R ~T~t4(a "2LS ~ 128K x 8 Asynchronous CMOS Static RAM January 1992 Features • Description This Circuit Is Processed In Accordance to Mll-Std883 and Is Fully Conformant Under the Provisions of

Contextual Info: Philips Semiconductors Product specification Dual JK flip-flop with reset; negative-edge trigger 74LV107 FEATURES DESCRIPTION • Wide operating: 1.0 to 5.5 V The 74LV107 is a iow-voitage Si-gate CMOS device that is pin and function compatible with 74HC/HCT1G7.

MDE01

Contextual Info: MDE01 Is "7 > V ^ £ /Transistors M n E 0 1 ti^ h 7 > '> '^ 7 K Multi Device Composite Transistor Array) i —£ K 7 7 /M otor Driver 1 • « * MF 20 pin — ’> 'C , "7 yfjÉH/'Dimensions (Unit : mm) ;u fÿ ÎJ I' h •7 > V J * £ ¿ f é V c e (sat) W I- 7 > v X

27D014

Contextual Info: HM-92570 H A R R IS SEMICONDUCTOR 256K Buffered Synchronous CMOS RAM Module January 1992 Features Description • The HM-92570 is a fully buffered 256K bit CMOS RAM Module con­ sisting of sixteen HM-6516 2K x 8 CMOS RAMs, two 82C82 CMOS octal latching bus drivers, and two HCT-138 CMOS 3:8 decoders in

HV77 Supertex

Contextual Info: ^ . HV77 Supertex ine 32 MHz, 64-Channel Serial To Parallel Converter With Push-Pull Outputs Ordering Information Package Options Device 80 Lead Quad Ceramic Gullwlng 80 Lead Quad Plastic Gullwlng Die 80 Lead Quad Ceramic Gullwing MIL-STD-883 Processed"

Contextual Info: UT54ACS 163/UT54 ACTS 163 Radiation-Hardened 4-Bit Synchronous Counters FEA TURES PIN O U TS 16-Pin D IP Top View • Internal look-ahead for fast counting • Carry output for n-bit cascading • Synchronous counting ecu • Synchronously programmable • 1.2|i radiation-hardened CMOS

ECG transistor replacement guide book free

Abstract: Burr-Brown Application Note AN-165 philips ecg replacement guide DC-DC Converter Burr-Brown 700 tl2272 BB IS0107 Tubes Catalog SDM857KG transistor manual substitution ecg book FREE DOWN design a 60hz notch filter
Contextual Info: BURR-BROWN APPLICATIONS HANDBOOK B U R R - BROW N l B B < B u rr-B ro w n 1C A p p l i c a t i o n s H andbook LI-459 1994 Burr-Brown Corporation Printed in USA Burr-Brown Corporation International Airport Industrial Park Mailing Address: PO Box 11400

Contextual Info: December 1992 SflE » • 4305271 0043712 flbO « H A S HS-508ARH/883S " F 5 1 - I Z . Radiation Hardened 8 Channel CMOS AnalogMultiplexer with Overvoltage Protection Features • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTO RS ISSUE 3 - FEBRUARY 1996_ CO M PLEM EN TA RY TYPE B SP31 - BSP41 BSP33 - BSP43 P A R T M A R K IN G D E T A IL - D e vice typ e in full ABSOLUTE MAXIMUM RATINGS. PA R A M ETER SYM BO L Collector-Base Voltage

Contextual Info: KM684002/KM684002L CMOS SRAM 5 12K x 8 Bit High-Speed C M O S Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 17,20,25 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 10 mA(Max.) 500|iA(max.)-L Ver Operating KM684002/L-17 : 180mA(Max.)