003BLL7 Search Results

PAL26V16

Abstract: teradyne lasar
Contextual Info: FINAL COM’L: -15/20 IND: -18/24 Z I Advanced Micro Devices M A C H 1 3 0 - 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins ■ 64 Outputs ■ 64 Macrocells ■ 64 Flip-flops; 4 clock choices ■ 15 ns tpD Commercial

Contextual Info: BSS89 _ J V_ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed prim arily as a line current interrupter in telephone sets, it can also be applied in other applications such as in relays, line

5962-8979801

Abstract: 5962-8979801YA 5962-8979801XC BUS-65142 BUS-65143 BUS-65144 BUS-65145 CT2542 CT2542-FP QML-38534
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Chanaes in accordance with NOR 5962-R275-94. 94-09-14 K. A. Cottonaim B Chanaes in accordance with NOR 5962-R365-97. 97-06-19 K. A. Cottonaim C Add device types 03, 04, and CAGE code 88379. Correct note 1 in