BF908 Search Results
BF908 Datasheets (27)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| BF908 | NXP Semiconductors | BF908 - Dual-gate MOS-FETs - CIS TYP: 3.1 pF; COS: 1.7 pF; ID: 40 mA; IDSS: 3 to 27 mA; IDSS min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 36 mS | Original | 259.49KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF908 | Philips Semiconductors | Dual-Gate MOS-FET | Original | 58.92KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF908 | Philips Semiconductors | Dual-Gate MOS-FET | Original | 162.75KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF908 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 105.31KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF908 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 101.25KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF908 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 42.73KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF908,215 | NXP Semiconductors | Dual-gate MOS-FETs - CIS TYP: 3.1 pF; COS: 1.7 pF; ID: 40 mA; IDSS: 3 to 27 mA; IDSS min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 36 mS; Package: SOT143B (SOT4); Container: Tape reel smd | Original | 259.53KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF908R | NXP Semiconductors | Dual-gate MOS-FETs - CIS TYP: 3.1 pF; COS: 1.7 pF; ID: 40 mA; IDSS: 3 to 27 mA; IDSS min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 36 mS | Original | 259.53KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF908-R | NXP Semiconductors | Dual-gate MOS-FETs | Original | 259.47KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF908R | Philips Semiconductors | Dual-Gate MOS-FET | Original | 58.92KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF908R | Philips Semiconductors | Dual-Gate MOS-FET | Original | 162.75KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF908R | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 101.25KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF908R | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 105.31KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF908R | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 42.73KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF908R,215 | NXP Semiconductors | Dual-gate MOS-FETs - CIS TYP: 3.1 pF; COS: 1.7 pF; ID: 40 mA; IDSS: 3 to 27 mA; IDSS min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 36 mS; Package: SOT143R (SC-61B); Container: Tape reel smd | Original | 259.53KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF908R,235 | NXP Semiconductors | Dual-gate MOS-FETs - CIS TYP: 3.1 pF; COS: 1.7 pF; ID: 40 mA; IDSS: 3 to 27 mA; IDSS min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 36 mS; Package: SOT143R (SC-61B); Container: Tape reel smd | Original | 259.53KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF908T/R | NXP Semiconductors | Dual-gate MOS-FETs - CIS TYP: 3.1 pF; COS: 1.7 pF; ID: 40 mA; IDSS: 3 to 27 mA; IDSS min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 36 mS | Original | 259.53KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF908TR | Philips Semiconductors | Dual-gate MOS-FET | Original | 58.93KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF908T/R | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 41.11KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF908WR | NXP Semiconductors | BF908WR - N-channel dual-gate MOS-FET - CIS TYP: 3.1 pF; COS: 1.7 pF; ID: 40 mA; IDSS: 3 to 27 mA; IDSS min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 36 mS | Original | 69.77KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF908 Price and Stock
NXP Semiconductors BF908R,215Bf908R/ Reel; |NXP Semiconductors BF908R,215 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BF908R,215 | Bulk | 3,000 |
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Buy Now | ||||||
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BF908R,215 | 4,846 |
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Get Quote | |||||||
NXP Semiconductors BF908RINSTOCK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BF908R | 21,000 |
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Get Quote | |||||||
Others RJ11-4L-B F9080INSTOCK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RJ11-4L-B F9080 | 47 |
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Get Quote | |||||||
NXP Semiconductors BF908R,235Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BF908R,235 | 10,550 |
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Get Quote | |||||||
NXP Semiconductors BF908,215RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BF908,215 | 8,183 |
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Get Quote | |||||||
BF908 Datasheets Context Search
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Contextual Info: ' • bbS3^31 002355b 141 ■ APX Philips Semiconductors Product specification N AHER P H IL IP S /D IS C R E T E b?E D Dual gate MOS-FETs — BF908; BF908R QUICK REFERENCE DATA FEATURES SYMBOL • High IY„I dual gate MOS-FET • Short channel transistor with high |
OCR Scan |
002355bbf908bf908rot143+1 | |
BF908R
Abstract: BF908 URC276 MRC280 BH rn transistor
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OCR Scan |
005355bbf908bf908rot143+5 | |
BF908WR
Abstract: cifa dual-gate
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OCR Scan |
ot343rbf908wrmrc276cifa+1 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BF908WR N-channel dual-gate MOS-FET Preliminary specification 1995 Apr 25 NXP Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES PINNING • High forward transfer admittance Short channel transistor with high forward transfer |
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bf908wrr77/01/pp9 | |
5BS transistorContextual Info: Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES PINNING • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. |
OCR Scan |
bf908wrot343r0ch2274rc281+2 | |
MAM198
Abstract: BF908WR MRC280 dual-gate
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bf908wrr77/01/pp9mam198mrc280+1 | |
BF908 Application Note
Abstract: BF908R BF908 dual-gate
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bf908bf908rmam039bf908 application note+1 | |
BF908
Abstract: BF908R dual-gate BF908 Application Note
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bf908bf908rmam039dual-gate+1 | |
"MARKING CODE M1"
Abstract: BF908R BF908 MRC280 dual-gate nxp marking code M2
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bf908bf908rbf908-rmarking code m1+3 | |
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Contextual Info: BF908; BF908R Dual-gate MOS-FETs Rev. 03 — 14 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact |
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bf908bf908rbf908-r | |
Dual-Gate Mosfet
Abstract: MRC280 FET MARKING CODE BF908WR PHILIPS MOSFET MARKING depletion p mosfet code md dual-gate
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bf908wrdual-gate mosfetmrc280fet marking code+4 | |
BF908R
Abstract: BF908 dual-gate
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OCR Scan |
bf908bf908rot143ot143r+3 | |
MRF581
Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
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mrf5812sk163bfg480wnb b6 smd transistor+6 | |
Motorola transistor smd marking codes
Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
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motorola transistor smd marking codeswalkie-talkie transceiver diagrambfm505bf256b spice model+6 | |
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an10133
Abstract: capacitor 100nf 16v x7r 10 1005 murata TEA5767/68 Garage Door Opener remote circuit diagrams philips rf manual balanced modulator ic 1496 2.4GHz Cordless Phone circuit diagram A case 10uf (10v) ±20% Chip Tantal TEA5767 working principle scanner block diagram
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bb202bf1107/8bga6589an10133+9 | |
BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
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bap1321-02bap65-05bap65-03bap65-05w+16 | |
sot23 marking M6p
Abstract: PMBFJ111 PMBFJ174
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ot143ot343bf510bf994s+9 | |
uaf4000
Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
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20ghzuaf4000toshiba smd marking code transistorsmd code marking wl sot23+7 | |
BF1201A
Abstract: bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A
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s11/s22bgs67abgy68bgy66b+16 | |
smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
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od-80od123/323ot-23ot346+16 | |
tcxo philips 4322
Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
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tcxo philips 4322philips tcxo 4322 190iso9001-certified philipsbfq32 philips bare die datasheet+6 | |
BFG591 amplifier
Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
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tff1007hntff11070hntff11073hntff11077hn+16 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11 | |
RF1119
Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
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pmbfj177pmbfj308pmbfj309pmbfj310+15 | |