BFP183 Search Results

Contextual Info: BFP183T/BFP183TW/BFP183TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features

BFP183T

Contextual Info: BFP183T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low power applications D Low noise figure D High transition frequency 2 3 1 4 94 9279

BFP183W

Abstract: BGA420
Contextual Info: BFP183W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 2 mA to 30 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

BFP183T

Abstract: marking 83 Telefunken
Contextual Info: BFP183T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low power applications D Low noise figure

Contextual Info: SIEMENS BFP183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! BFP 183R RHs

Contextual Info: BFP183W NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at 4 collector currents from 2 mA to 30 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

BFP183W

Abstract: BGA420 marking rhs
Contextual Info: BFP183W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 2 mA to 30 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFP183W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 2 mA to 30 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

ZL 58

Abstract: BFP183W
Contextual Info: BFP183W NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at 4 collector currents from 2 mA to 30 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

BFP183T

Abstract: BFP183TRW BFP183TW 83P sot-143 vishay MARKING UM
Contextual Info: BFP183T / BFP183TW / BFP183TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Low power applications Low noise figure e3 High transition frequency fT = 8 GHz Lead Pb -free component Component in accordance to RoHS 2002/95/EC

BFP181

Abstract: BFP183
Contextual Info: BFP183 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 2 mA to 30 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

85014

Abstract: BFP183T BFP183TRW BFP183TW
Contextual Info: BFP183T/BFP183TW/BFP183TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features

Contextual Info: BFP183T / BFP183TW / BFP183TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Low power applications Low noise figure e3 High transition frequency fT = 8 GHz Lead Pb -free component Component in accordance to RoHS 2002/95/EC

83P sot-143

Abstract: MG MARKING
Contextual Info: BFP183T / BFP183TW / BFP183TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Low power applications • Low noise figure • High transition frequency fT = 8 GHz 3 4 2 1 Applications SOT-343 For low noise and high gain broadband amplifiers at

sot143 Marking code RHs

Contextual Info: BFP183 NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 4
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BFP183R

Abstract: transistor marking RHs
Contextual Info: BFP183R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA
fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs

BFP183T

Abstract: BFP183TRW BFP183TW 83P sot-143
Contextual Info: BFP183T/BFP183TW/BFP183TRW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features

marking 83

Abstract: BFP183T
Contextual Info: Temic BFP183T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features

BFP183T

Contextual Info: BFP183T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low power applications D Low noise figure

sot-143 vishay telefunken

Contextual Info: ViSHAY _ ▼ BFP183T/BFP183TW/BFP183TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

SPICE 2G6

Contextual Info: BFP183R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA
fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs

Contextual Info: SIEMENS BFP183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F= 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

BFP183TW

Abstract: Telefunken
Contextual Info: BFP183TW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low power applications D Low noise figure

bfp183

Abstract: VPS05178
Contextual Info: BFP183 NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 4
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking