FIE35BQ5 Search Results

Q67100-Q3018

Abstract: Q67100-Q3019
Contextual Info: SIEM EN S 8M X 36-Bit EDO-DRAM Module HYM 368035S/GS-60 Advanced Inform ation • 8 388 608 words by 36-Bit organization in 2 banks • Fast access and cycle time 60 ns RAS access time 15 ns CAS access tim e 104 ns cycle time • Hyper page mode EDO capability

STT 3 SIEMENS 431

Abstract: 80c517 Siemens sab 2793b-p
Contextual Info: bOE D • fl2 3 5 fc iO S G G H 7T23 S IE M E N S SIEMENS 152 « S IE G A K T IE N G E S E L L S C H A F ^ High-Performance 8-Bit CMOS Single-Chip Microcontroller ^ e=r - / 9 - o 7 SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM

Contextual Info: SIEMENS 16M X 72-Bit Dynamic RAM Module ECC - Module HYM 72V1600GS-50/-60 HYM 72V1610GS-50/-60 Preliminary Information • 16 777 216 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)

Contextual Info: BSO 220N Infineon t«ehneiog¡«i Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features • Dual N Channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 20 V ^fos on

Contextual Info: BCP29 BCP 49 S IE M E N S Electrical Characteristics at Tk - 25 "C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage lc = 1 mA, I b = 0 BCP 29 BCP 49 Vibrjceo Collector-base breakdown voltage

Contextual Info: SIEMENS BFP183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F= 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: SIEMENS TEMPFET BTS115A Features • • • • • N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin Type v DS B TS 115A 50 V ^OS<on 0.12 Í2 h 15.5 A 1 2 3 G D

Contextual Info: SIEMENS BFG 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1,5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • f j = 7.5GHz F = 1.5 dB at 900MHz