BF1206 |
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NXP Semiconductors
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BF1206 - TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC, SC-88, 6 PIN, FET RF Small Signal |
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BF1206 |
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Philips Semiconductors
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BF120-60-A-0-N-D |
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GCT Semiconductor
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60W, 2MM SOCKET, DIL, SMT, VERT, |
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BF1206,115 |
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NXP Semiconductors
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Dual N-channel dual-gate MOS-FET - CIS TYP: 2.41.7 pF; COS: 1.10.85 pF; ID: 30 mA; IDSS: 14 to 23 & 9 to 17 mA; Noise figure: 1.6@800MHz & 1.4@800MHz dB; Note: Two low noise gain amplifiers in one package ; -V(P)GS MAX: 1 V; VDSmax: 6 V; YFS min.: 3329 mS; Package: SOT363 (SC-88); Container: Tape reel smd |
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BF1206,115 |
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NXP Semiconductors
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BF1206 - TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC, SC-88, 6 PIN, FET RF Small Signal |
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Original |
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BF120-62-A-0-N-D |
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GCT Semiconductor
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62W, 2MM SOCKET, DIL, SMT, VERT, |
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BF120-64-A-0-N-D |
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GCT Semiconductor
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64W, 2MM SOCKET, DIL, SMT, VERT, |
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BF120-66-A-0-N-D |
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GCT Semiconductor
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66W, 2MM SOCKET, DIL, SMT, VERT, |
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BF120-68-A-0-N-D |
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GCT Semiconductor
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68W, 2MM SOCKET, DIL, SMT, VERT, |
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BF1206F |
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NXP Semiconductors
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BF1206 - TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC PACKAGE-6, FET RF Small Signal |
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BF1206F |
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Philips Semiconductors
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Dual N-channel dual gate MOSFET |
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BF1206F,115 |
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NXP Semiconductors
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Dual N-channel dual gate MOSFET - CIS TYP: 2.41.7 pF; COS: 1.10.85 pF; ID: 30 mA; IDSS: 3 to 6.5 mA; Noise figure: 1.0@800MHz dB; Note: Partly internal bias ; VDSmax: 6 V; YFS min.: 17 mS; Package: SOT666 (SS-Mini); Container: Tape reel smd |
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BF1206F,115 |
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NXP Semiconductors
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BF1206F - Dual N-channel dual gate MOSFET, SOT666 Package, Standard Marking, Reel Pack, SMD, 7" |
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