BF1100 Search Results
BF1100 Datasheets (21)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BF1100 | NXP Semiconductors | BF1100 - Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS | Original | 314.2KB | 15 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1100 | Philips Semiconductors | Dual-Gate MOS-FET | Original | 108.1KB | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1100 | Philips Semiconductors | Dual-gate MOS-FETs | Scan | 382.69KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1100,215 | NXP Semiconductors | Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS; Package: SOT143B (SOT4); Container: Tape reel smd | Original | 314.22KB | 15 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1100A | Seiko Epson | Surface Mount Crystal Oscillators | Original | 109.97KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1100R | NXP Semiconductors | BF1100R - Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS | Original | 314.2KB | 15 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1100R | Philips Semiconductors | Dual-Gate MOS-FET | Original | 108.1KB | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1100R | Philips Semiconductors | Dual-gate MOS-FETs | Scan | 382.69KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1100R,215 | NXP Semiconductors | Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS; Package: SOT143R (SC-61B); Container: Tape reel smd | Original | 314.22KB | 15 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1100R,235 | NXP Semiconductors | Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS; Package: SOT143R (SC-61B); Container: Tape reel smd | Original | 314.22KB | 15 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1100RT/R | NXP Semiconductors | Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS | Original | 314.22KB | 15 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1100RTR | Philips Semiconductors | Dual-gate MOS-FET | Original | 108.11KB | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1100T/R | NXP Semiconductors | Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS | Original | 314.22KB | 15 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1100TR | Philips Semiconductors | Dual-gate MOS-FET | Original | 108.11KB | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1100WR | NXP Semiconductors | BF1100WR - Dual-gate MOS-FET - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS | Original | 139.53KB | 16 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1100WR | Philips Semiconductors | Dual-Gate MOS-FET | Original | 99.57KB | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1100WR | Philips Semiconductors | Dual-gate MOS-FET | Scan | 692.89KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1100WR,115 | NXP Semiconductors | Dual-gate MOS-FET - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd | Original | 99.57KB | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1100WR,115 | NXP Semiconductors | BF1100 - TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC, SMD, CMPAK-4, FET RF Small Signal | Original | 139.53KB | 16 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1100WRT/R | NXP Semiconductors | Dual-gate MOS-FET - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS | Original | 99.57KB | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1100 Price and Stock
Abracon Corporation AX3PBF1-100.0000100MHz; SMD; 3.2x2.5mm; Dim: 3.2x2.5mm; -40÷85°C |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
AX3PBF1-100.0000 | 250 | 30 |
|
Buy Now | ||||||
|
AX3PBF1-100.0000 | Bulk | 249 | 1 |
|
Buy Now | |||||
| AX3PBF1-100.0000 | Bulk | 20 |
|
Buy Now | |||||||
|
AX3PBF1-100.0000 |
|
Buy Now | ||||||||
Abracon Corporation AX7DBF1-1000.0000C1GHz; SMD; -40÷85°C |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
AX7DBF1-1000.0000C | 50 | 50 |
|
Buy Now | ||||||
|
AX7DBF1-1000.0000C | Bulk | 50 |
|
Buy Now | ||||||
|
AX7DBF1-1000.0000C | Tape & Reel | 50 |
|
Get Quote | ||||||
|
AX7DBF1-1000.0000C |
|
Buy Now | ||||||||
Abracon Corporation AX7PBF1-1000.0000C1GHz; SMD; -40÷85°C |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
AX7PBF1-1000.0000C | 50 | 50 |
|
Buy Now | ||||||
|
AX7PBF1-1000.0000C | Bulk | 10 |
|
Buy Now | ||||||
|
AX7PBF1-1000.0000C | Tape & Reel | 50 |
|
Get Quote | ||||||
|
AX7PBF1-1000.0000C |
|
Buy Now | ||||||||
Abracon Corporation AX5PBF1-1000.0000C1GHz; SMD; -40÷85°C |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
AX5PBF1-1000.0000C | 17 | 17 |
|
Buy Now | ||||||
|
AX5PBF1-1000.0000C | Tape & Reel | 23 | 10 |
|
Buy Now | |||||
| AX5PBF1-1000.0000C | Cut Tape | 23 | 1 |
|
Buy Now | ||||||
| AX5PBF1-1000.0000C | Bulk | 7 |
|
Buy Now | |||||||
|
AX5PBF1-1000.0000C |
|
Buy Now | ||||||||
NXP Semiconductors BF1100WR,115Trans RF MOSFET N-CH 14V 0.03A 4-Pin(3+Tab) CMPAK T/R |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
BF1100WR,115 | 63,430 | 1,611 |
|
Buy Now | ||||||
|
BF1100WR,115 | 63,430 | 1 |
|
Buy Now | ||||||
|
BF1100WR,115 | 8,215 |
|
Get Quote | |||||||
BF1100 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
"MARKING CODE MF"
Abstract: marking ggc BF1100WR marking code mf dual-gate
|
OCR Scan |
bf1100wrot343r7110fi5bmarking code mf+2 | |
|
Contextual Info: BF1100; BF1100R Dual-gate MOS-FETs Rev. 02 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact |
Original |
bf1100bf1100r | |
dual-gate
Abstract: BF1100 BF1100R marking code my
|
Original |
bf1100bf1100rdual-gatemarking code my | |
BF1100
Abstract: BF1100R 71hwfc dual-gate
|
OCR Scan |
bf1100bf1100rot143ot143r+2 | |
marking 550 sot143
Abstract: BF1100 BF1100R dual-gate
|
Original |
bf1100bf1100rmarking 550 sot143dual-gate | |
BF1100RContextual Info: Philips Semiconductors Product specification Dual-gate MOS-FETs FEATURES • Specially designed for use at 9 to 12 V supply voltage BF1100; BF1100R and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. |
OCR Scan |
bf1100bf1100rot143r | |
BF1100WR
Abstract: marking code mf dual-gate
|
Original |
bf1100wrr77/01/pp16marking code mfdual-gate | |
|
Contextual Info: Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR PINNING FEATURES • Specially designed for use at 9 to 12 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz |
OCR Scan |
bf1100wrot343r | |
|
Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1100WR Dual-gate MOS-FET Product specification 1995 Apr 25 NXP Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING • Specially designed for use at 9 to 12 V supply voltage Short channel transistor with high forward transfer |
Original |
bf1100wrr77/01/pp16 | |
marking code mf
Abstract: dual-gate FET MARKING CODE BF1100WR mosfet handbook fw 2602
|
Original |
bf1100wrmarking code mfdual-gatefet marking code+2 | |
MRF581
Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
|
Original |
mrf5812sk163bfg480wnb b6 smd transistor+6 | |
Motorola transistor smd marking codes
Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
|
Original |
motorola transistor smd marking codeswalkie-talkie transceiver diagrambfm505bf256b spice model+6 | |
digital TUNING FM RADIO RECEIVER
Abstract: Varicap bb112 OQ8844T varicap bb130 RADIO fm RECEIVER IC UHF TDA1515 FM Receiver Circuits TEA5591A TDA7000 philips ic fm am stereo receiver TDA1013
|
Original |
tda1072atda1072attda1572tda1572t+16 | |
smd glass zener diode color codes
Abstract: KA 511 common anode alphanumeric display 5252 F 1108 ANSI C78.377 2011 F1109 5252 F led D1060 F1060 TLOH16CP H1032
|
Original |
tl19w01f1108f1109bce0006g+9 | |
|
|
|||
BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
|
Original |
bap1321-02bap65-05bap65-03bap65-05w+16 | |
sot23 marking M6p
Abstract: PMBFJ111 PMBFJ174
|
OCR Scan |
ot143ot343bf510bf994s+9 | |
uaf4000
Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
|
Original |
20ghzuaf4000toshiba smd marking code transistorsmd code marking wl sot23+7 | |
BF1201A
Abstract: bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A
|
Original |
s11/s22bgs67abgy68bgy66b+16 | |
smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
|
Original |
od-80od123/323ot-23ot346+16 | |
tcxo philips 4322
Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
|
Original |
tcxo philips 4322philips tcxo 4322 190iso9001-certified philipsbfq32 philips bare die datasheet+6 | |
BFG591 amplifier
Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
|
Original |
tff1007hntff11070hntff11073hntff11077hn+16 | |
SG-615PH
Abstract: SG-615PH C SG615PH smd t2a BF147 SG-615P SG615 100nf Capacitor 0201 BF1600A SMD T2B
|
Original |
sg615025mhz00mhzbf1228a+15 | |
RF1119
Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
|
Original |
pmbfj177pmbfj308pmbfj309pmbfj310+15 | |
2SK43 transistor
Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
|
Original |
2sk43 transistorsmd transistor m29 sot343uxa23465motorola transistor smd marking codes+6 | |