2406L Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor VN 2406L 3 DRAIN N -C h an n el — Enhancem ent Motorola Preferred Device 1 SOURCE MAXIMUM RATINGS Unit Symbol Value D rain-Source Voltage V d SS 240 Vdc D rain-G ate Voltage V d GR 60 Vdc G ate-S ource Voltage

2406l

Abstract: BSS129 N-Channel Depletion-Mode MOSFET depletion-mode MOSFET
Contextual Info: T em ic 2406L/2410L, BSS129 S e m i c o n d u c t o r s N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V ) *Ds<on) N D 2406L Max ( f i ) v GS<0ff) -1 .5 t o -4 .5 0.23 10 -0 .5 t o -2 .5 0.18 20 -0 .7 (m in) 0.15 240

Siliconix TO-92S

Contextual Info: TN2410L, VN2406D/L, VN241 OL/LS Vishay Siliconix N-Channel 240-V D-S MOSFETs PRODUCT SUMMARY rDS(on) Max (Q) vGs(th)00 Id (A) TN2410L 1 0 V q s = 4 .5 V 0.5 to 1.8 0.18 VN2406D 6 @ V Gs = 1 0 V 0.8 to 2 1.12 6 ® VGS = 1 0 V 0.8 to 2 0.18 VN2410L 1 0 ® V qs = 1 0 V

2406L

Abstract: VN2406
Contextual Info: VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

2406L

Abstract: VF25 VN2406
Contextual Info: Supertex inc. VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

2406L

Abstract: VN2406 A120109
Contextual Info: VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicongate manufacturing process. This combination produces a

hh 004 TO92

Abstract: VN2406M VN2406L vn1710m VN1206M VN1706M VN2406B siliconix VN10KM VN2410M VN1206L
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35

VN2406D

Abstract: VN2410* mosfet TN2410L VN2406L VN2410L VN2410LS
Contextual Info: _ TN2410L, VN2406D/E, VN241 OL/LS Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Num ber rDS on Max (£2) VGs(th) (V) I d (A) TN 2410L 10 @ V GS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ V GS = 1 0 V 0.8 to 2

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

3055e

Abstract: SI9959 4P05 si9943 SI9945 69COM 2406M 25n05l s42d TP5N
Contextual Info: f i S ilico n i x Replacement Guide A M e m b e r o f th e T e m ic G ro u p LITTLE FOOT Replacement Guide P a rt N um ber C onfiguration Vds V D ata Sheet Page # r DS(on) (52) VGS = 10 V P-C hannel M OSFETs O n e Si9400 m ay rep la c e o n e o f th e following:

C031411

Contextual Info: Supertex inc. VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode

IRF250 plastic package

Abstract: IRF250 IRF250.251 irf450 t965 IRF340 IRF350 IRF440 IRF740 IRF820
Contextual Info: Ü Ü A C D ^ U / C D M i v i a Dr/\Wi iv iv ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *200°C RATING I Packages: BV qss Volts 4 5 0 -5 0 0 TO -3 T O -2 20

2406l

Abstract: TN2460L TN2460T marking v80
Contextual Info: TN2460L/TN2460T Vishay Siliconix N-Channel 240-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN2460L 240 TN2460T rDS(on) Max (W) VGS(th) (V) ID Min (mA) 60 @ VGS = 10 V 0.5 to 1.8 75 60 @ VGS = 10 V 0.5 to 1.8 51 FEATURES BENEFITS APPLICATIONS

VN2406D

Abstract: vn2410 2406L 2410L TN2410L VN2406L VN2410L VN2410LS vishay siliconix code marking Siliconix TO-92S
Contextual Info: TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix N-Channel 240-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12 6 @ VGS = 10 V 0.8 to 2

transistor c103m

Abstract: C103M c105m W41l c105m TRANSISTOR c103m TRANSISTOR C103M equivalent 54175 4013 bt CMOS Sc 54155
Contextual Info: TGC100M MILITARY SERIES 1/im CMOS GATE ARRAYS Release 2.0, APRIL 1989 Fully Characterized for Military Applications — Product Fully Compliant with the Requirements of M IL-STD-883 Paragraph 1.2.1 Is Available — Production Processing Is in Accordance with the General Requirements of

Contextual Info: 7807LT-2 Dual L-Band/Wideband RF Fiber Transmitter with VistaLiNK and SmartMON The 7807LT-2 is a dual fiber optic transmitter for RF signals in the extended LBand or wider frequency range. It accepts two RF inputs from coaxial cable and provides two outputs for optical transmission. An RF monitor output is provided for

VN1710m

Abstract: VN64GA VN2406D IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840
Contextual Info: Ü Ü A C D ^ U / C D M i v i a Dr/\W i iv i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *200°C RATING Packages: I BV qss Volts 450-500 TO -3 T O -2 20 S ilic o n ix

Contextual Info: Supertex inc. VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

24-07L-1-TGG

Abstract: 2401L1 24-06L-1-TGG 24122
Contextual Info: RF Coaxial Connectors SMB Plugs, Jacks and Adaptors Features: • Reliable electrical performance to 4.0GHz. • Quick connect and disconnect snap on coupling. Electrical Impedance 50Ω Frequency Range 0 to 4.0GHz 178U VSWR 316U 1.3 +0.04f maximum GHz Straight

2410l

Abstract: VN2410L vishay siliconix code marking VN2406D 2406L TN2410L VN2406L VN2410LS 70204
Contextual Info: TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix N-Channel 240-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12 6 @ VGS = 10 V 0.8 to 2

RELAY 1ZS

Abstract: VN2410M IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840 VNP002A
Contextual Info: Ü Ü A C D ^ U / C D M i v i a Dr/\W i iv i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *200°C RATING Packages: I BV qss Volts 450-500 TO -3 T O -2 20 S ilic o n ix

2406l

Abstract: 2410L TN2410L VN2406D VN2406L VN2410L VN2410LS
Contextual Info: TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix N-Channel 240-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12 6 @ VGS = 10 V 0.8 to 2

vishay siliconix code marking

Abstract: 2406l TN2460T TN2460L VISHAY SOT LOT CODE week code vishay SILICONIX marking v80
Contextual Info: TN2460L/TN2460T Vishay Siliconix N-Channel 240-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN2460L 240 TN2460T rDS(on) Max (W) VGS(th) (V) ID Min (mA) 60 @ VGS = 10 V 0.5 to 1.8 75 60 @ VGS = 10 V 0.5 to 1.8 51 FEATURES BENEFITS APPLICATIONS

2576L

Abstract: OA 5611.52 5611.52 OA5611 2483L1 2501L1 2502L1 relais schema 2403L1 M2037
Contextual Info: Relais de sécurité OA 5611, OA 5612 • Construit d'après EN 50 205, IEC/EN 60 255, IEC 60 664-1 • Avec contacts guidés • Consomation nominale faible • Longue durée de vie mécanique • Haute fiablilité de commutation grâce aux contacts à couronnes à grands mouvements