2410L Search Results

2410l

Abstract: ND2406 ND2410L BSS129 ND2406L 2410* mosfet nd2410
Contextual Info: ND2406L/2410L, BSS129 N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2406L rDS(on) Max (W) VGS(off) (V) ID (A) 6 –1.5 to –4.5 0.23 10 –0.5 to –2.5 0.18 20 –0.7 (min) 0.15 240 2410L BSS129 230 Features

VN2406D

Abstract: VN2410* mosfet TN2410L VN2406L VN2410L VN2410LS
Contextual Info: _ 2410L, VN2406D/E, VN241 OL/LS Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Num ber rDS on Max (£2) VGs(th) (V) I d (A) TN 2410L 10 @ V GS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ V GS = 1 0 V 0.8 to 2

2410l

Abstract: AN901 BSS129 ND2406 ND2406L ND2410L
Contextual Info: ND2406L/2410L, BSS129 Siliconix NĆChannel DepletionĆMode MOS Transistors Product Summary Part Number V BR DSV Min (V) ND2406L rDS(on) Max (W) VGS(off) (V) ID (A) 6 -1.5 to -4.5 0.23 10 -0.5 to -2.5 0.18 20 -0.7 (min) 0.15 240 2410L BSS129 230 For applications information see AN901.

BSS129

Abstract: ND2406 ND2406L ND2410 ND2410L
Contextual Info: ND2406L/2410L, BSS129 N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2406L rDS(on) Max (W) VGS(off) (V) ID (A) 6 –1.5 to –4.5 0.23 10 –0.5 to –2.5 0.18 20 –0.7 (min) 0.15 240 2410L BSS129 230 Features

2406l

Abstract: BSS129 N-Channel Depletion-Mode MOSFET depletion-mode MOSFET
Contextual Info: T em ic ND2406L/2410L, BSS129 S e m i c o n d u c t o r s N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V ) *Ds<on) N D 2406L Max ( f i ) v GS<0ff) -1 .5 t o -4 .5 0.23 10 -0 .5 t o -2 .5 0.18 20 -0 .7 (m in) 0.15 240

2410l

Abstract: BSS129 P3780 ND2410L
Contextual Info: Tem ic ND2406L/2410L, BSS129 Siliconix N-Channel Depletion-Mode MOS Transistors Product Summary Part Number V BR DSV M in (V) ND2406L rDS(on) M ax (£2) VGg(oH) (V) I d (A) 6 -1 .5 to -4 .5 0.23 10 -0 .5 to -2 .5 0.18 20 -0 .7 (min) 0.15 240 2410L BSS129

2410l

Abstract: BSS129 ND2406 ND2406L ND2410 ND2410L N-Channel Depletion-Mode MOSFET
Contextual Info: ND2406L/2410L, BSS129 N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2406L rDS(on) Max (W) VGS(off) (V) ID (A) 6 –1.5 to –4.5 0.23 10 –0.5 to –2.5 0.18 20 –0.7 (min) 0.15 240 2410L BSS129 230 Features

Contextual Info: ND2406L/2410L, BSS129 N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2406L rDS(on) Max (W) VGS(off) (V) ID (A) 6 –1.5 to –4.5 0.23 10 –0.5 to –2.5 0.18 20 –0.7 (min) 0.15 240 2410L BSS129 230 Features

p-channel mosfet bss92

Abstract: vishay siliconix code marking to-92 bss92 70210 VP2410
Contextual Info: VP2020L, BSS92 Vishay Siliconix P-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V ) rDS(on) Max ( Q ) VGS<th) (V ) I d (A) VP2020L -2 0 0 20 @ V q s = -4 .5 V -0 .8 to -2 .5 -0 .1 2 BSS92 -2 0 0 20 @ V qs = - 1 0 V -0 .8 t o -2 .8 -0 .1 5

Siliconix TO-92S

Contextual Info: 2410L, VN2406D/L, VN241 OL/LS Vishay Siliconix N-Channel 240-V D-S MOSFETs PRODUCT SUMMARY rDS(on) Max (Q) vGs(th)00 Id (A) 2410L 1 0 V q s = 4 .5 V 0.5 to 1.8 0.18 VN2406D 6 @ V Gs = 1 0 V 0.8 to 2 1.12 6 ® VGS = 1 0 V 0.8 to 2 0.18 2410L 1 0 ® V qs = 1 0 V

Contextual Info: V N 2406 V N 2410 /f ie . N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices max 2 40 V 240V Order Number 1 Package o" R ds(on ) B V Dqs 5 z BVdss I 10Î1 (min) TO-39 TO-92 TO-220 1.0A V N 24 0 6 B V N 24 0 6 L

0427

Abstract: 2410L VP2410L MMA6
Contextual Info: 2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

2410L

Abstract: VP2410L
Contextual Info: 2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

Contextual Info: VN2410 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain

2410L

Abstract: VN2410
Contextual Info: VN2410 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

circuit integrator sem 3040

Abstract: photovoltaic cell ana 650 ac drive circuit diagram ad7730 pcb circuit example lucas schaevitz pressure transducer SCHEMATIC ad7730 LOAD CELL ADC bourdon Y 913 cd 1619 CP fm radio intel 945 MOTHERBOARD SERVICE MANUAL
Contextual Info: PRACTICAL DESIGN TECHNIQUES FOR SENSOR SIGNAL CONDITIONING +3.0V TO +5.25V Cx j v p 1 p V p D r 5 I f X FILT SELF TEST — O — • ADXL202 X SENSOR WBÊBÊÊÊÊk ■ S H H H k — ^2kil — W v — <»— DUTY CYCLE M ODULATOR ADXL202 O SCILLATO R ■ r*N

2410l

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N -C hannel — Enhancement 3 DRAIN 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit D rain-S ource Voltage VDSS 240 Vdc D ra in -G a te Voltage V d GR 60 Vdc G ate-S ource Voltage -C on tin u ou s

VP2410

Abstract: VP2410L marking LD VISHAY
Contextual Info: 2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) -2 4 0 fDSIon) Max (Q) VGs<.h)(V) Id (A) 10 e V q s = - 4 .5 V -0 .8 to -2 .5 -0 .1 8 FEATURES BENEFITS APPLICATIONS • • • • • • • • • • • High-Side Switching

3055e

Abstract: SI9959 4P05 si9943 SI9945 69COM 2406M 25n05l s42d TP5N
Contextual Info: f i S ilico n i x Replacement Guide A M e m b e r o f th e T e m ic G ro u p LITTLE FOOT Replacement Guide P a rt N um ber C onfiguration Vds V D ata Sheet Page # r DS(on) (52) VGS = 10 V P-C hannel M OSFETs O n e Si9400 m ay rep la c e o n e o f th e following:

VN2410M

Abstract: VN1210M siliconix VN10KM vn10le VN1710m BSR70 BSR72 BSR76 VN1210L VN1710L
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25 0.25 0.7 1.0 1.0 1.0

IRF250 plastic package

Abstract: IRF250 IRF250.251 irf450 t965 IRF340 IRF350 IRF440 IRF740 IRF820
Contextual Info: Ü Ü A C D ^ U / C D M i v i a Dr/\Wi iv iv ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *200°C RATING I Packages: BV qss Volts 4 5 0 -5 0 0 TO -3 T O -2 20

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request