VN2406D Search Results

Siliconix TO-92S

Contextual Info: TN2410L, VN2406D/L, VN241 OL/LS Vishay Siliconix N-Channel 240-V D-S MOSFETs PRODUCT SUMMARY rDS(on) Max (Q) vGs(th)00 Id (A) TN2410L 1 0 V q s = 4 .5 V 0.5 to 1.8 0.18 VN2406D 6 @ V Gs = 1 0 V 0.8 to 2 1.12 6 ® VGS = 1 0 V 0.8 to 2 0.18 VN2410L 1 0 ® V qs = 1 0 V

VN2410L

Abstract: 70204 TN2410L VN2406D VN2406L VN2410LS
Contextual Info: TN2410L, VN2406D/E, VN2410L/LS Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) TN2410L VN2406D rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 6 @ VGS = 10 V 0.8 to 2 1.12 6 @ VGS = 10 V

VN2406B

Abstract: VN2406
Contextual Info: liöE D SILICONIX INC • ÖE54735 GD14104 □ ■ VN2406B, VN2406D CT* S ilico ilic o rn ix Jm W in c co rp o ra te d N-Channel Enhan ce m en t-M od e M O S Transistors PRODUCT SUMMARY PART NUM BER TO-2Q5AD TO-39 V (BR)DSS fD S(O N ) (n ) (V) Id (A) PACKAGE

VN2406D

Abstract: VN2410* mosfet TN2410L VN2406L VN2410L VN2410LS
Contextual Info: _ TN2410L, VN2406D/E, VN241 OL/LS Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Num ber rDS on Max (£2) VGs(th) (V) I d (A) TN 2410L 10 @ V GS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ V GS = 1 0 V 0.8 to 2

Contextual Info: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V

Contextual Info: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L YN2406D VN2410L VN2406L VN2410M VN2406M Product Summary P a rt N um ber r DS on M a x (Q ) V c s « h )(V ) I d (A ) TN2410L 10 @ V cs = 4.5V 0.5 to 1.8 0.18 VN2406D 6 @ VGs = 10 V

VNDB24

Abstract: TN201 VN2406L
Contextual Info: VNDB24 N-Channel Enhancement-Mode MOSFET TYPE PACKAGE Single TO-220 • VN2406D Single TO-92 TO-226AA • VN2406L, TN201 OL, TN2410L Single TO-237 • VN2406M Single Chip • Available as VNDB1CHP DEVICE TYPICAL CHARACTERISTICS 1 2 3 4 5 V DS (V) 1 2 V GS (V)

VN2406

Abstract: 20W Solenoid Driver VN2406B VN2406D VN2406L VN2410 VN2410L
Contextual Info: VN2406 VN2410 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 TO-220 240V 6Ω 1.0A VN2406B VN2406L VN2406D 240V 10Ω 1.0A — VN2410L — Advanced DMOS Technology

VN2406D

Abstract: vn2410 2406L 2410L TN2410L VN2406L VN2410L VN2410LS vishay siliconix code marking Siliconix TO-92S
Contextual Info: TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix N-Channel 240-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12 6 @ VGS = 10 V 0.8 to 2

Contextual Info: ^ Supertex inc. VN2406 VN2410 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV d ss / R d S ON (min) TO-39 TO-92 TO-220 240V 60 1.0A VN2406B VN2406L VN2406D 240V 10£i 1.0A — VN2410L — qgs Advanced DMOS Technology High Reliability Devices

Contextual Info: T em ic TN2410L, VN2406/2410 Series Semiconductors N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number n S on) M a x (Q ) V GS(th) (V) Id (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D

VN2410M

Abstract: VN2406D VN2406L VN2406M VN2410L TN2410L VN2410* mosfet tn2410 siliconix to-18
Contextual Info: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V

VN2410M

Abstract: TN2410L VN2406D VN2406L VN2406M VN2410L vn2406
Contextual Info: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOS Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M rDS on Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12 VN2406L 6 @ VGS = 10 V 0.8 to 2

TN2410L

Abstract: VN2406D VN2406L VN2406M VN2410L VN2410M
Contextual Info: TN2410L, VN2406/2410 Series Siliconix NĆChannel EnhancementĆMode MOS Transistors TN2410L VN2406D VN2406L VN2406M VN2410L VN2410M Product Summary Part Number rDS on Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V

Contextual Info: VNDN24 N-Channel Enhancement-Mode MOSFETs JBTE55& DEVICE TYPE PACKAGE Single TO-92 TO-226AA • VN2406L Single TO-39 (TO-205AD) • VN2406M Single TO-220 • VN2406D Single SOT-23 • TN2460T Single Chip • Available as VNDN1CHP TYPICAL CHARACTERISTICS

VN2406

Contextual Info: VN2406 VN2410 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^D S O N ^D(ON) b v dgs (max) (min) TO-39 TO-92 TO-220 240V 6Q 1.0A VN2406B VN2406L VN2406D 240V 10Q 1.0A — VN2410L — Advanced DMOS Technology

TN2010L

Contextual Info: .Zf in c o rp o ra te d VNDB1 DIE N-Channel Enhancement-Mode MOS Transistor V N D B 1C H P * TN2010L TN2410L VN2406D/L/M VN2410L/M ‘ Meets or exceeds specification for all part numbers listed below For additional design information please consult the typical performance curves VNDB24.

VN2406M

Abstract: VN2406L
Contextual Info: VN2406 SERIES N-Channel Enhancement-Mode MOS Transistors V BR DSS o (V) r DS(ON) (n ) (A) PACKAGE VN2406D 240 6 1.12 TO-220 VN2406L 240 6 0.22 TO-92 VN2406M 240 6 0.25 TO-237 Performance Curves: VNDB24 TO-237 FRONT VIEW TO-220 PRODUCT SUMMARY PART NUMBER

VN2410M

Contextual Info: Tem ic suiconix TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOS Transistors TN2410L VN2406D VN2406L VN2406M VN2410L VN2410M Product Summary Part Num ber VGS th (V) I d (A) 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ V GS = 10V 0.8 to 2 1.12 VN2406L

2406l

Abstract: 2410L TN2410L VN2406D VN2406L VN2410L VN2410LS
Contextual Info: TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix N-Channel 240-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12 6 @ VGS = 10 V 0.8 to 2

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

equivalent IRF640 FI

Abstract: IRF640 equivalent BUZ 72 A equivalent sony 2sj54 VN0108N2 irf740 equivalent BUZ34 IRF232 IRF522 IRF540
Contextual Info: Siliconix 1-1? f l Ü Ü A C D ^ U / C D M i v i a Dr/\Wi i v i v ^ i v T T k iv r i i i i i v t iv u v iw i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BVqss Volts 4 5 0 -5 0 0

1RF820

Abstract: VN64GA VN2410M IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840
Contextual Info: Ü Ü A C D ^ U / C D M i v i a Dr/\W i iv i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220

VN64GA

Abstract: IRF733 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90