VN2410M
Abstract: VN2410L
Contextual Info: VN2410 SERIES N-Channel Enhancement-Mode MOS Transistors TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V (BR)DSS (V) r DS(ON) (Í1) (A) PACKAGE VN2410L 240 10 0.17 TO-92 VN2410M 240 10 0.19 TO-237 •d 1 SOURCE 2 GATE 3 DRAIN BOTTOM VIEW TO-237
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Contextual Info: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V
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Contextual Info: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L YN2406D VN2410L VN2406L VN2410M VN2406M Product Summary P a rt N um ber r DS on M a x (Q ) V c s « h )(V ) I d (A ) TN2410L 10 @ V cs = 4.5V 0.5 to 1.8 0.18 VN2406D 6 @ VGs = 10 V
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tn2410lvn2406/2410yn2406dvn2410l+4vn2406lvn2410mvn2406mvn2406d
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VN2410M
Abstract: VN2410L VN2410
Contextual Info: ^Sifconix S S 2 ‘ ~ ìn Gt VN2410 SERIES N-Channel Enhancem ent-M ode MOS Transistors PRODUCT SUMMARY TO-92 PART NUMBER V 8R DSS rDS(ON) (Í1) (V) BOTTOM VIEW <D (A) PACKAGE VN241QL 240 10 0.17 TO-92 VN2410M 240 10 0.19 TO-237 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDB24 (See Section 7)
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Contextual Info: VN2410M Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)240 V(BR)GSS (V)30 I(D) Max. (A)200m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)
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Contextual Info: T em ic TN2410L, VN2406/2410 Series Semiconductors N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number n S on) M a x (Q ) V GS(th) (V) Id (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D
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VN2410M
Abstract: VN2406D VN2406L VN2406M VN2410L TN2410L VN2410* mosfet tn2410 siliconix to-18
Contextual Info: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V
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tn2410lvn2406/2410vn2406dvn2410l+6vn2406lvn2410mvn2406mvn2410* mosfettn2410siliconix to-18
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VN2410M
Abstract: TN2410L VN2406D VN2406L VN2406M VN2410L vn2406
Contextual Info: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOS Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M rDS on Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12 VN2406L 6 @ VGS = 10 V 0.8 to 2
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TN2410L
Abstract: VN2406D VN2406L VN2406M VN2410L VN2410M
Contextual Info: TN2410L, VN2406/2410 Series Siliconix NĆChannel EnhancementĆMode MOS Transistors TN2410L VN2406D VN2406L VN2406M VN2410L VN2410M Product Summary Part Number rDS on Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V
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VN2410M
Abstract: 3XXC
Contextual Info: TELEDYNE COMPONENTS EäE fiW b G H D 000^47^ 3 m T-29-25 VN2410 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS FET ORDERING INFORMATION VN2410CHP Sorted Chips in Waffle Pack TO-226AA TO-92 Plastic Package VN2410L TO-237 Plastic Package VN2410M 240V, 10 ohm
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t-29-25vn2410o-226aao-237+5vn2410chpvn2410lvn2410mvn2410u3xxc
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VN2410M
Contextual Info: Tem ic suiconix TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOS Transistors TN2410L VN2406D VN2406L VN2406M VN2410L VN2410M Product Summary Part Num ber VGS th (V) I d (A) 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ V GS = 10V 0.8 to 2 1.12 VN2406L
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VQ1006J
Abstract: siliconix VN10KM VN10KM VQ1006 VQ1004 VQ1004J VQ1004P VQ1006P A1318 T
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 •d Continuous (Amps) Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 VN2406M VN2410M
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vn10kevn10leto-52vn2406m+15vn2410mvw1706mvn1710mvn1206mvn1210mvn0808mvq1006jsiliconix vn10kmvn10kmvq1006vq1004vq1004jvq1004pvq1006pa1318 t
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equivalent IRF640 FI
Abstract: IRF640 equivalent BUZ 72 A equivalent sony 2sj54 VN0108N2 irf740 equivalent BUZ34 IRF232 IRF522 IRF540
Contextual Info: Siliconix 1-1? f l Ü Ü A C D ^ U / C D M i v i a Dr/\Wi i v i v ^ i v T T k iv r i i i i i v t iv u v iw i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BVqss Volts 4 5 0 -5 0 0
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o-220vn1000dirf522vn1000a+11irf540irf632irf640equivalent irf640 fiirf640 equivalentbuz 72 a equivalentsony 2sj54vn0108n2irf740 equivalentbuz34irf232
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VQ1000P
Abstract: VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25
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buz 350 equivalent
Abstract: VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM
Contextual Info: Siliconix 1-1? f l MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25
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o-220vn1000dirf522vn1000a+13irf540irf632irf640buz 350 equivalentvn0109n5 analogvn10km equivalentsupertex vn10kevn67ad analogvn0300m equivalentvq1004 equivalentvq1004sony 2sj54siliconix vn10km
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VN0300M
Abstract: siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25
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1RF820
Abstract: 733 331 VN64GA CHARACTERISTICS DIODE 10SI 10 IRF332 VN4000A IRF340 IRF440 IRF450 IRF820
Contextual Info: Ü Ü A C D ^ U /C D M i v i a iv i v ^ i v T T k iv r i i i i i v D r/\W i t i v u v i w C A lA A ^ /\ r i f^ .n \ M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING Packages: I B V qss Volts 4 5 0 -5 0 0 TO-3 TO-220
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to-220to-39to-237to-92+14to-202irf450irf840irf440vn5001d/irf830vnp002a1rf820733 331vn64gacharacteristics diode 10si 10irf332vn4000airf340irf820
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VN2410L equivalent
Abstract: VN1210M equivalent VN2410L "cross reference" VN2410M VN0300M equivalent MTM8N20 VN1710M IRF340 IRF350 IRF450
Contextual Info: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | ' r r r 's ' I O O < O Ò I I I I I | ' ' ' lO ' I P ' ' ' ' I I j j CO00 COCO j j ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i I I I I OOOO ' ' I
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ivn6100tnuto-39ivn6200cndto-220+15vn0401divn6200cnet0-220irf533ivn6200cnfvn2410l equivalentvn1210m equivalentvn2410l "cross referencevn2410mvn0300m equivalentmtm8n20vn1710mirf340irf350irf450
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2N6658
Abstract: VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
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TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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1n32451n3611gp1n3612gp1n3613gp+161n3614gp1n37251n3957gp1n4001gp1n4002gp1n4003gptca780tfk u 111 btfk u 4614 btfk s 186 ptfk u 217 btfk bp w 41 ntfk bpw 41 ntfk 880tfk 148tdsr 5150 g
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mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is
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hh 004 TO92
Abstract: VN2406M VN2406L vn1710m VN1206M VN1706M VN2406B siliconix VN10KM VN2410M VN1206L
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35
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IRF 850
Abstract: IRf 92 0151 623 13a 8Q DIODE irf640 IRF340 IRF350 IRF440 IRF450 IRF740
Contextual Info: Ü Ü A C D ^ U / C D M i v i a Dr/\Wi i v i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220
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o-220o-237o-202irf450+14irf840irf440vn5001d/irf830vnp002airf820vn5001a/irf430irf 850irf 92 0151623 13a8q diodeirf640irf340irf350irf740
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siliconix VN10KM
Abstract: VN10KM VN2222KM bsr65 BSR64 VN10LM VN2222LM VQ1000J/P VN0610L VN10KE
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 VN2406M
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