VQ1004P Search Results

d2q transistor

Contextual Info: V Q 10 04 LJ S u p ertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Standard Commercial Devices BV dss / ^DS ON) Order Number / Package I d (ON) B V qcs (max) (min) Quad Ceramic DIP' 60V 3.5Ì2 1.5A VQ1004P Quad Plastic DIP

sis 962

Contextual Info: VQ1004 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVdss/ BV ogs 60V Order Number / Package •D ON n DS(ON) (max) 3.5Q (min) Quad Ceramic DIP* 1.5A VQ1004P Quad Plastic DIP VQ1004J * 14 pin side b ra zed ceram ic D IP

FAST DMOS FET Switches n-CHANNEL

Abstract: VQ1004P VQ1004 VQ1004J
Contextual Info: VQ1004 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) Quad Ceramic DIP* 60V 3.5Ω 1.5A VQ1004P Quad Plastic DIP VQ1004J * 14 pin side brazed ceramic DIP Advanced DMOS Technology

2N6660

Abstract: s0437 2N6660 siliconix VQ1004J
Contextual Info: 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V D-S Single and Quad MOSFETs PRODUCT SUMM ARY Part Number V (B R )D S S M i n ( V ) 2N6660 VQ1004J/P 60 r D S (o n) M a x ( Q ) V G S (th ) (V) I d (A) 3 @ V q s = 10 V 0.8 to 2 1.1 3.5 @ V qs = 10 V 0.8 to 2.5

VQ1000P

Abstract: VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25

buz 350 equivalent

Abstract: VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM
Contextual Info: Siliconix 1-1? f l MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25

VN0300M

Abstract: siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25

VN2410L equivalent

Abstract: VN1210M equivalent VN2410L "cross reference" VN2410M VN0300M equivalent MTM8N20 VN1710M IRF340 IRF350 IRF450
Contextual Info: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | ' r r r 's ' I O O < O Ò I I I I I | ' ' ' lO ' I P ' ' ' ' I I j j CO00 COCO j j ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i I I I I OOOO ' ' I

2N6658

Abstract: VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

1004J

Abstract: 2N6659 M 1004j
Contextual Info: Tem ic 2N6659/2N6660, VQ1004J/P_ suimnix N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt N um ber V BR DSS M in (V) rDS(on) M ax (Q) v GS(th) (V) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 2N6660 60 3 @ V(-js = 10 V 0.8 to 2 1.1

hh 004 TO92

Abstract: VN2406M VN2406L vn1710m VN1206M VN1706M VN2406B siliconix VN10KM VN2410M VN1206L
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35

siliconix VN10KM

Abstract: VN10KM VN2222KM bsr65 BSR64 VN10LM VN2222LM VQ1000J/P VN0610L VN10KE
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 VN2406M

VN88AD

Abstract: VN66AF 2N6658 VN89AF VN0808M VN88AO siliconix VN10KM VN46AF BSR67 VN89AD
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3

Contextual Info: VQ1004 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package b v dss/ ^DS ON b v dgs (max) (min) Quad Ceramic DIP* 60V 3.5Q 1.5A V Q 10 04P I d (ON) Quad Plastic DIP V Q 10 04J * 14 pin side brazed ceram ic DIP

VN10KM equivalent

Abstract: vn10km cross VN10LM "cross reference" siliconix VN10KM VN10lM equivalent VN0300M equivalent VN10KM ECS iss 400 VN10LE vn1710m
Contextual Info: 1-17 MOSPOWER Cross Reference List c « g s s <0J= c P fi i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I I j j CO00 COCO j j ' I I I I OOOO ' ' I I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' '

siliconix VN10KM

Abstract: VN0300D VN0300M VP1001P VQ1001J VQ1001P VNMH03
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 •d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25

VN2410M

Abstract: VN1210M siliconix VN10KM vn10le VN1710m BSR70 BSR72 BSR76 VN1210L VN1710L
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25 0.25 0.7 1.0 1.0 1.0

IRF450 to-92

Abstract: VN2406M siliconix VN10KM VN2410M IRF340 IRF350 IRF440 IRF450 VN1210L IRF820
Contextual Info: Ü Ü A C D ^ U /C D M i v i a D r/\W i i v i v ^ i v T T k iv r i i i i i v t iv u v iw i C A lA A ^ /\r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING Packages: I BV qss Volts 45 0-500 TO-3 TO-220 S ilic o n ix

siliconix VN10KM

Abstract: VQ1001J VQ1001P
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) • d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25

VN45350T

Abstract: VN0603T 2N7001 VN45350 vn4012B
Contextual Info: H Siliconix incorporated N-CHANNEL V BR DS PART# (V) DS(ON) VGS(th) tON Ciss (V) (ns) (PF) ID (mA) PD (H) 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 30 30 10 10 10 10 10 10 38 38 35 35 16 16 35 35 0.85 0.85 0.46 0.46 0.23 0.23 0.40 0.40 2 2 2 2 2 2 2 2 3.0 3.0 2.5 2.5

2N6659

Abstract: 2N6660 VQ1004J VQ1004P
Contextual Info: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 3 @ VGS = 10 V 0.8 to 2 1.1 3.5 @ VGS = 10 V 0.8 to 2.5 0.46 2N6660

2N6660

Abstract: s4 vishay VQ1004J VQ1004P
Contextual Info: 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V D-S Single and Quad MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N6660 rDS(on) Max (W) 60 VQ1004J/P VGS(th) (V) ID (A) 3 @ VGS = 10 V 0.8 to 2 1.1 3.5 @ VGS = 10 V 0.8 to 2.5 0.46 FEATURES BENEFITS

2N6660

Abstract: 2N6660 siliconix 2N6659 VQ1004J VQ1004P
Contextual Info: 2N6659/2N6660, VQ1004J/P Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 2N6660 60 3 @ VGS = 10 V 0.8 to 2 1.1 VQ1004J/P 60 3.5 @ VGS = 10 V