VN2406L Search Results

4E7 philips

Abstract: KY 711 VN2406L FL 210 transistor
Contextual Info: • Philips 711002b DDbflOSS T4S ■ PHIN Sem iconductors Data sheet status Product specification date of issue July 1993 FEATURES VN2406L N-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION PINNING - TO -92 variant • Very low RDs 0n

Contextual Info: bbS3T31 D03MDfl3 552 * A P X P h ilip s S e m ic o n d u c to rs VN2406L Data sheet status Product specification date of issue July 1993 N-channel enhancem ent m ode vertical D-M O S transistor N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING - TO-92 variant

Contextual Info: VN2406L Preferred Device Small Signal MOSFET 200 mAmps, 240 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Source Voltage VDSS 240 Vdc Drain–Gate Voltage VDGR 60 Vdc Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 µs

oni 350

Abstract: transistor c 4106 VN2406L
Contextual Info: VN2406L* M AXIM UM RATINGS Sym bol Value Unit Drain-Source Voltage Voss 240 V Drain-Gate Voltage V d GR 60 V Vg S Vg s M 'd ±2 0 ±4 0 Vdc Vpk 200 mA 'd m 500 mA Pd 350 mW 2.8 m w rc - °C Rating Gate-Source Voltage - Continuous — Non-repetitive tD s 50 /is

Contextual Info: VN2406 VN2410 Super te x inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering information Order Number / Package BVDss I ^DS O N ' d (ON) bvms (max) (min) TO-92 240V 6.on 1.0A VN2406L 240V ion 1.0A VN2410L Features Advanced DMOS Technology □ Free from secondary breakdown

Contextual Info: MOTOROLA Order this document by VN2406L/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2406L 3 DRAIN Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 240 Vdc

Contextual Info: MOTOROLA Order this document by VN2406L/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2406L 3 DRAIN Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 240 Vdc

D024 - M relay

Abstract: D024 philips D024 VN2406L
Contextual Info: • [^53=131 D024[]fl3 5S2 H A P X Philips Semiconductors Data sheet status Product spécification date of issue July 1993 VN2406L N-channel enhancement mode vertical D-MOS transistor N AMER P H I L I P S / D I S C R E T E FEATURES PIN CONFIGURATION b?E D

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA ir TMOS FET Transistor N -Channel — Enhancement VN2406L 3 DRAIN Motorola P rotor ed Device GATE TMOS MAXIMUM RATINGS Rating D rain -S ou rce Voltage 1 SOURCE Symbol Value Unit Vdc VDSS 240 D ra in -G a te Voltage V d GR

Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor VN2406L QUICK REFERENCE DATA FEATURES • Very low RDSon • Direct interface to u-m us, I I L, etc V qs drain-source voltage DC • High-speed switching VGSth

Contextual Info: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V

VN2406LZL1

Abstract: VN2406 VN2406L TO-92 CASE
Contextual Info: VN2406L Preferred Device Small Signal MOSFET 200 mAmps, 240 Volts N–Channel TO–92 http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 240 Vdc Drain–Gate Voltage VDGR 240 Vdc Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 µs

Contextual Info: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L YN2406D VN2410L VN2406L VN2410M VN2406M Product Summary P a rt N um ber r DS on M a x (Q ) V c s « h )(V ) I d (A ) TN2410L 10 @ V cs = 4.5V 0.5 to 1.8 0.18 VN2406D 6 @ VGs = 10 V

VNDB24

Abstract: TN201 VN2406L
Contextual Info: VNDB24 N-Channel Enhancement-Mode MOSFET TYPE PACKAGE Single TO-220 • VN2406D Single TO-92 TO-226AA • VN2406L, TN201 OL, TN2410L Single TO-237 • VN2406M Single Chip • Available as VNDB1CHP DEVICE TYPICAL CHARACTERISTICS 1 2 3 4 5 V DS (V) 1 2 V GS (V)

VN2410

Abstract: VN2406 VN2406L VN2410L
Contextual Info: VN2406 VN2410 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package 240V 6.0Ω 1.0A VN2406L 240V 10Ω 1.0A VN2410L TO-92 Features Advanced DMOS Technology ❏ Free from secondary breakdown

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2406L 3 DRAIN Motorola Preferred Device 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 240 Vdc Drain – Gate Voltage VDGR 60

Contextual Info: ^ Supertex inc. VN2406 VN2410 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV d ss / R d S ON (min) TO-39 TO-92 TO-220 240V 60 1.0A VN2406B VN2406L VN2406D 240V 10£i 1.0A — VN2410L — qgs Advanced DMOS Technology High Reliability Devices

Contextual Info: VN2406 VN2410 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^ D S O N I d (ON) b v dgs (max) (min) TO-92 240V 6.0Q. 1.0A VN2406L 240V 10£i 1.0A VN2410L Features Advanced DMOS Technology

Contextual Info: T em ic TN2410L, VN2406/2410 Series Semiconductors N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number n S on) M a x (Q ) V GS(th) (V) Id (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D

VN2410M

Abstract: VN2406D VN2406L VN2406M VN2410L TN2410L VN2410* mosfet tn2410 siliconix to-18
Contextual Info: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V

VN2410M

Abstract: TN2410L VN2406D VN2406L VN2406M VN2410L vn2406
Contextual Info: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOS Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M rDS on Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12 VN2406L 6 @ VGS = 10 V 0.8 to 2

TN2410L

Abstract: VN2406D VN2406L VN2406M VN2410L VN2410M
Contextual Info: TN2410L, VN2406/2410 Series Siliconix NĆChannel EnhancementĆMode MOS Transistors TN2410L VN2406D VN2406L VN2406M VN2410L VN2410M Product Summary Part Number rDS on Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V

VN2406

Abstract: VN2406L VN2410 VN2410L
Contextual Info: VN2406 VN2410 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package 240V 6.0Ω 1.0A VN2406L 240V 10Ω 1.0A VN2410L TO-92 Features Advanced DMOS Technology • Free from secondary breakdown

Contextual Info: VNDN24 N-Channel Enhancement-Mode MOSFETs JBTE55& DEVICE TYPE PACKAGE Single TO-92 TO-226AA • VN2406L Single TO-39 (TO-205AD) • VN2406M Single TO-220 • VN2406D Single SOT-23 • TN2460T Single Chip • Available as VNDN1CHP TYPICAL CHARACTERISTICS