TP5N Search Results

Contextual Info: TP5NC50 TP5NC50FP N - CHANNEL 500V -1.3 Q. - 5.5A TO-220/TO-220FP _ PowerMESH MOSFET P R ELIM IN ARY DATA TYPE S TP5N C 50 TP5NC 50FP • . . . . V dss RDS on Id 500 V 500 V < 1 .5 Q. < 1 .5 Q. 5.5 A 5.5 A TYPICAL RDS(on) = 1.3

Contextual Info: *57 SGS-THOMSON s t p 5 n 3 ol ilLiCTIIMDe TP5N30LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE TP5N 30L S TP5N 30LFI . . . • ■ V dss R DS on Id 300 V 300 V < 1.4 a < 1.4 a 5 A 3.5 A TYPICAL RDs(on) = 1.25 £2 AVALANCHE RUGGED TECHNOLOGY

lem 732 733

Abstract: lem 731 IRF3303 lem 733 1rf730 IRF330-333 5N40 MTP5N35 733 331 lem* 731
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE I 34b‘ïb74 0 0 5 7 0 ^ □ IRF330-333/IRF730-733 M TM /M TP5N35/5N40 N-Channel Power M O SF ET s, 5.5 A, 350 V/400 V FAIRCHILD A Schlumberger Company Power And Discrete Division — Description TO-204AA TO-220AB IRF330 IRF331

stp5n50

Contextual Info: TP5N50 TP5N50FI SGS-THOMSON ;[LEOT «S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V TP5N50 S TP5N 50FI . . . . . dss R D S o n Id 1.6 U 1.6 Q 4 .5 A 3 A 500 V 500 V AVALANCHE RUG G EDN ESS TECHNO LOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Schematics AL 1450 DV

Abstract: ixc 844 schematic diagram welding inverter STP5N80 845 diode DC/AC to DC smps circuit diagram schematic diagram dc-ac inverter schematic diagram dc-ac welding inverter CIRCUIT STP5N80FI RC50
Contextual Info: _ • 7^2^237 00Mb2öl « V# _ BiSGTH S C S -T H O M S O N [*^ Q [E[L gTi»«S TP5N80 TP5N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V TP5N80 S TP5N 80FI ■ . . . . ■ . dss 800 V 800 V RDS(on) Id < 2 0 < 2 n 5 .5 A

Contextual Info: TP5N 30L S TP5N30LFI V dss RDS on 300 V 300 V E D ED TYP E N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR A A ¿57 TP5N30L S T P 5 N 3 0 LFI S G S -T H O M S O N ¡m e ra « Id 5 A 3.5 A . TYPICAL RDs(on) = 1.25 Q . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: 7 C1ECIE37 G O m ^ l 513 • S 6 T H SGS-THOMSON £ t7 :G Jû T [M 0 gS S T P 5 N8 0 XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP5N 80XI V dss R d S (o ii Id 800 V < 2 .4 n 2 .6 A ■ T Y P IC A L RDS(on) = 1.9 £2 ■ . ■ . . . AVALANCHE RUGGED TECHNOLOGY

Diode B60

Abstract: 5NB60FP B60FP
Contextual Info: SGS-THOMSON !LiM@iO gS TP5NB60 TP5NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE TP5N B60 S TP5N B60FP • . . . . V dss R D S (o n Id 600 V 600 V < 2.0 a < 2.0 a 5 A 3 A TYPICAL RDS(on) = 1.8 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: SGS-THOMSON !LiM iO gS TP5NB40 TP5NB40FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE TP5NB 40 S TP5N B 40FP V dss RDS(on Id 400 V 400 V < 1.8 a < 1.8 a 4 .7 A 3.1 A . TYPICAL RDs(on) = 1.47 Cl m 100% AVALANCHE TESTED . . . VERY LOW INTRINSIC CAPACITANCES

5n90fi

Contextual Info: £ j ï SGS-THOMSON S T P 5N 90 S T P 5N 90FI ULKgraMOeS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP5N 90 TP5N 90FI • . . . . . . V d ss RDS on Id 900 V 900 V < 2.4 Q. < 2.4 Q. 5 A 2.8 A TYPICAL RDS(on) = 1.9 £2 AVALANCHE RUGGED TECHNOLOGY

MSK4900

Abstract: IGBT desaturation protection -55C to 125C
Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 600V ISOLATED HALF BRIDGE GATE DRIVER 4900 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Floating Channels up to 600V Up to 8 Amp Peak Source and Sink Current De-Saturation Protection/Shutdown Individual ON, OFF and Soft Shutdown Pins for Each IGBT Gate

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF730 Power Field Effect Transistor N-Channel Enhancem ent-M ode S ilico n Gate T M O S This TMOS Power FET is designed fo r high vo lt­ age, high speed power sw itching applications such as sw itching regulators, converters, solenoid and

Contextual Info: Tactile Switches 12 x 12 mm THT Tactile Switches with Ground Terminal TP5 Series 1.70 3.50±0.50 12.50±0.50 6.90±0.10 +0 1.80 -0.5 3.0 0.90±0.20 5±0.10 H 12.50±0.10 Ø1.20±0.05 3.8 0.30 13.90±0.50 CIRCUIT DIAGRAM 1.0 H = 7.30 Ø7.10 3.50 5±0.20 0.50 MAX.

MTP8N10

Abstract: mtp7n06 mtp12n10 MTP7N15 power mosfets to 204aa MTP5N15 mtp25n10 MTP12P08 MTP3N15 MTH8P20
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M TP2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

MFE9200

Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­

TER22

Contextual Info: KOA SPEER ELECTRONICS, INC. SS-222 R7 AHA 1/12/04 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency

tdr22

Contextual Info: KOA SPEER ELECTRONICS, INC. SS-222 R5 AHA 6/30/03 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency

TDR15

Abstract: TD18N TD68N TP82N TP68N
Contextual Info: MHL multilayer ceramic inductor features inductors • Monolithic structure provides high reliability in a wide temperature and humidity range • High quality ceramic material and unique manufacturing process provides high Q at high frequency • Standard EIA packages: 1E, 1J, 2A

Contextual Info: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1E, 1J, 2A, 2B • Marking: Yellow three-figure on blue protective coating

Contextual Info: KOA SPEER ELECTRONICS, INC. SS-203 R4 AHA 02/05/04 Thin Film Chip Inductors Type KL73 0402 CERTIFIED 1. Scope This specification applies to Thin Film Chip Inductors KL73 1E size produced by KOA Corporation. 2. Type Designation The type designation shall be the following form:

KL731H

Abstract: TP33N KL731E
Contextual Info: KL73 thin film inductor features Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B • Marking: Yellow three-figure on blue protective coating

Contextual Info: KOA SPEER ELECTRONICS, INC. SS-222 R9 AHA 2/09/05 Multilayer Ceramic Inductors Type MHL CERTIFIED CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency

TSD45N50V

Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
Contextual Info: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00