00MB2 Search Results

Schematics AL 1450 DV

Abstract: ixc 844 schematic diagram welding inverter STP5N80 845 diode DC/AC to DC smps circuit diagram schematic diagram dc-ac inverter schematic diagram dc-ac welding inverter CIRCUIT STP5N80FI RC50
Contextual Info: _ • 7^2^237 00Mb2öl « V# _ BiSGTH S C S -T H O M S O N [*^ Q [E[L gTi»«S STP5N80 STP5N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V STP5N80 S TP5N 80FI ■ . . . . ■ . dss 800 V 800 V RDS(on) Id < 2 0 < 2 n 5 .5 A

BYX39 400

Abstract: BYX39 BYX39-1400 BYX39-1400R BYX39-600 BYX39-600R IEC134
Contextual Info: BYX39 SERIES r-ûi-\z_ - PHILIPS INT ERNATIONAL 5 L jE 711002b 0Dmb2G D IPHIN CONTROLLED AVALANCHE RECTIFIER DIODES Also available to BS9333—F005 Silicon diodes in a DO—4 metal envelope, capable of absorbing transients and Intended for use in power rectifier application.

4N 26 TFK

Contextual Info: T O S H IB A TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

CSR86

Abstract: EEPROM AMD 705
Contextual Info: PRELIMINARY & Am79C961 PCnet -ISA+Jumperless Single-Chip Ethernet Controller for ISA Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet co n tro lle r fo r the Industry Standard A rchitecture ISA and Extended Industry Standard A rchitecture (EISA) buses

PicoGate

Contextual Info: i V I D 3.3V CMOS SINGLE BUS BUFFER GATE W ITH 3-STATE O UTPUT AND 5 VOLT TOLERANT I/O T FEA TU RES: - IDT74LVC1G126A D E S C R IP T IO N : 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch PSOP package

CA3130

Abstract: pin diagram of IC ca3130 IC1 CA3130 CA3130A CA3130AS CA3130T IC CA3130 application pin diagram of ca3130 IC1 CA3130 CURRENT TO VOLTAGE CONVERTER 200-microampere
Contextual Info: H A R R IS SE H IC O N D ff H A R b lE SECTOR R I M3Q5S71 D TflM IHAS CA3130 S SEMICONDUCTOR BiMOS Operational Amplifier with MOSFET Input/CMOS Output April 1993 Features • 004bE77 Description MOSFET Input Stage Provides: - Very High Z| * 1.5 TO 1 3 x 1012fi) lyp .

THMY7280F1BEG-80

Abstract: TC59S6408BFT THMY7280F1BBG CS13X OA54
Contextual Info: TOSHIBA THMY7280F1 BEG-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 8,388,6O8-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7280F1BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFT DRAMs and an unbufler on a printed circuit board.

STP5N80

Contextual Info: 7 ^ 2 ^ 2 3 7 0 0 M b 2 ö l b?M • S G T H _ SGS-THOMSON STP5N80 STP5N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STP5N 80 STP5N80FI ■ . ■ . . ■ ■ V d ss RDS on Id 800 V 800 V <20 < 2 i! 5.5 A 3.1 A TYPICAL RDS(on) = 1.65 £2

Contextual Info: Sept. 1995 Edition 1.0a '- FUJITSU DATA SHEET ' MB1503 LOW-POWER PLL FREQUENCY SYNTHESIZER WITH POWER SAVE FUNCTION 1.1GHz The Fujitsu MB1503 is a serial input phase-locked loop (PLL) frequency synthesizer with a pulse-swallow function. A stand-by mode is provided to limit power consumption during

Contextual Info: C ««vuHnai — • H YM 7 V6 4100 B Q -S E R IE S SO DIMM 1Mx64 bit SDRAM MODULE based on 1Mx16 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64100B is high speed 3.3Volt synchronous dynamic RAM module consisting of four 1Mx16 bit Synchronous DRAMs in 50-pin SOJ or TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glassepoxy circuit board. Two 0.22|j.F and two 0.0022|iF decoupling capacitors are mounted for each SDRAM.