STP5N80XI Search Results

ISOWATT221

Abstract: stp5n80xi
Contextual Info: SCS-THOMSON STP5N80XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N 80XI ' Voss RDS on Id 800 V 2 .4 i l 2 .6 A . . . . . . AVALANC HE RUG G EDNESS TECHNO LO G Y 100% AVALAN C H E TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW INPUT C APAC ITANC E

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

Contextual Info: 7 C1ECIE37 G O m ^ l 513 • S 6 T H SGS-THOMSON £ t7 :G Jû T [M 0 gS S T P 5 N8 0 XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP5N 80XI V dss R d S (o ii Id 800 V < 2 .4 n 2 .6 A ■ T Y P IC A L RDS(on) = 1.9 £2 ■ . ■ . . . AVALANCHE RUGGED TECHNOLOGY

TSD45N50V

Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
Contextual Info: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000