TN1L Search Results

9264blf

Contextual Info: HM9264B Series 64 k SRAM 8-kword x 8-bit HITACHI ADE-203-618C (Z) Rev. 3.0 Nov. 1997 Description The Hitachi HM9264B is 64k-bit static RAM organized 8-kword x 8-bit. It realizes higher performance and low power consumption by 1.5 (Am CMOS process technology. The device, packaged in 450 mil SOP

Contextual Info: TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

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Contextual Info: Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

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Abstract: 125OC TN0104 TN0104N3-G TN0104N8-G A1117 fet sot-89 marking code
Contextual Info: TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: HM6264BI Series 8,192-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-492A Z Rev. 1.0 Sep. 5, 1996 Description The Hitachi HM6264BI is 64k-bit static RAM organized 8-kword x 8-bit. It realizes higher performance and low power consumption by 1.5 pm CMOS process technology. The device,

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Abstract: tn1lw marking TN
Contextual Info: TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

HM62256BLP-8

Abstract: HM62256BLFP-8T HM62256 256K RAM HM62256 JAPAN HM62256B HM62256BLFP-7T HM62256BLP-7 HM62256BLP-7SL HM62256BLSP-7 HM62256BLSP-7SL
Contextual Info: HM62256B Series 256k SRAM 32-kword x 8-bit HITACHI ADE-203-135F (Z) Rev. 6.0 Nov. 13, 1997 Description The Hitachi HM62256B Series is a CMOS static RAM organized 32,768-word x 8-bit. It realizes higher performance and low power consumption by employing 0.8 jitn Hi-CMOS process technology. The

Contextual Info: HM6264B Series 64 k SRAM 8-kword x 8-bit HITACHI ADE-203-454B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HM6264B is 64k-bit static RAM organized 8-kword x 8-bit. It realizes higher performance and low power consumption by 1.5 (Am CMOS process technology. The device, packaged in 450 mil SOP

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Abstract: TN0104 TN0104N3 TN0104N8 TN0104ND
Contextual Info: TN0104 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-92 TO-243AA* Die† 40V 1.8Ω 1.6V 2.0A TN0104N3 — TN0104ND 40V 2.0Ω 1.6V 2.0A —

TN0104N8-G

Abstract: marking nd sot-89 transistor TN1504ND TN1L TN0104 TN0104N3-G TN1504NW VF15 transistor MARKING CODE LAYOUT G SOT89 Diode SOT-89
Contextual Info: Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown

Contextual Info: Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown

HM62256BLP-8

Abstract: HM62256BLFP-8T HM62256BLFP HM62256BLFP-7T HM62256 sram HM62256B HM62256BLP-7 HM62256BLP-7SL HM62256BLSP-7 HM62256BLSP-7SL
Contextual Info: HM62256B Series 256k SRAM 32-kword x 8-bit HITACHI ADE-203-135F (Z) Rev. 6.0 Nov. 13, 1997 Description The Hitachi HM62256B Series is a CMOS static RAM organized 32,768-word x 8-bit. It realizes higher performance and low power consumption by employing 0.8 (Am Hi-CMOS process technology. The

TN1504ND

Abstract: TN1L TN1LW
Contextual Info: Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown

TN1L

Abstract: TN1LW FET SOT-89 N-Channel jedec package TO-243AA FET SOT-89 125OC TN0104 TN0104N3-G TN0104N8-G siemens fet to92
Contextual Info: TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Low threshold 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage