TN0610 Search Results

TN0606N7

Abstract: 2T-3
Contextual Info: G à S u p e r te x in c TN0606 TN0610 . Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R q S ON (max) Order Num ber / Package f b v dgs V GS(ttl) i B V DSS/ (max) TO-39 TO-92 TO-220 Quad P-DIP Quad C-DIP* DICEt 60V 1.5Q

TN0610

Contextual Info: TN0610 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN0610 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

sitn

Contextual Info: Supertex inc. TN0610 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s

siemens to92 n3 s

Contextual Info: TN0610 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TN0610 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TN0606

Abstract: TN0606N3 TN0606N5 TN0610 TN0610N3
Contextual Info: TN0606 TN0610 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS ON BVDGS (max) † ID(ON) (min) VGS(th) (max) Order Number / Package TO-92 TO-220 60V 1.5Ω 3.0A 2.0V TN0606N3 TN0606N5 100V 1.5Ω 3.0A 2.0V TN0610N3

Contextual Info: TN0606 TN0610 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R dS ON Id(ON) ^GSIth) (m ax) (min) (max) TO-39 TO-92 TO-220 Quad P-DIP* Quad C-DIP* 60V 1.5 0 3.0A 1.6V — TN0606N3 TN0606N5 TN0606N6 TN0606N7

Contextual Info: TN0610 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold - 2.0V max. High input impedance Low input capacitance - 100pF typical Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

TN0610

Contextual Info: Supertex inc. TN0610 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN0610 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

TN0610

Contextual Info: TN0610 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TN0606

Abstract: TN0606N2 TN0606N3 TN0606N5 TN0606N6 TN0606N7 TN0606ND TN0610 TN0610N2 TN0610N3
Contextual Info: TN0606 TN0610 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS ON BVDGS (max) Order Number / Package ID(ON) (min) VGS(th) (max) TO-39 TO-92 TO-220 Quad P-DIP Quad C-DIP* DICE† 60V 1.5Ω 3.0A 1.6V TN0606N2 TN0606N3

Contextual Info: TN0606 TN0610 _ N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / R d S ON Order Number / Package I d (ON) ^GS(th) BVdgs (max) (min) (max) TO-39 TO-92 TO-220 Quad P-DIP Quad C-DIP* 60V 1.5Q 3.0A 1.6V TN0606N2 TN0606N3 TN0606N5 TN0606N6

TN0606

Abstract: TN0606N3 TN0606N5 TN0606N6 TN0606N7 TN0610 TN0610N2 TN0610N3 TN0610N5 TN0606N
Contextual Info: TN0606 TN0610 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS ON BVDGS (max) Order Number / Package ID(ON) (min) VGS(th) (max) TO-39 TO-92 TO-220 Quad P-DIP* Quad C-DIP* 60V 1.5Ω 3.0A 1.6V — TN0606N3 TN0606N5

Contextual Info: TN0606 TN0610 _ Low Threshold S u p e r t e x ilK N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON I d (ON) ^GS(th) O rder Num ber / Package b v dgs (max) (min) (max) TO-92 TO-220 60V 1.5Q 3.0A 2.0V

TN0606

Abstract: TN0606N3 TN0610 TN0610N3
Contextual Info: TN0606 TN0610 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) Order Number / Package 60V 1.5Ω 3.0A 2.0V TN0606N3 100V 1.5Ω 3.0A 2.0V TN0610N3 TO-92 Features Low Threshold DMOS Technology

TN0606N7

Contextual Info: TN0606N6 _ TN0606N7 _Low ThreshoB N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package b v dss/ ^DS ON b v dgs (max) 14-Pin P-Dip 14-Pin C-Dip* 60V 1.5Q TN0606N6 TN0606N7

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

vn0606m

Abstract: b0808
Contextual Info: T e m ic siiiconix TN0601L, VN0606L/M, VN66AFI N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number TN0601L VN0606L VN0606M VN66AFD r DS on) 3@ VGS = 10 V 3@ VGS = 10 V 3@ VGS = 10 V 60 Features • • • • • Max (Q) 1.8 @ VGs = 10 V

gs 1117 ax

Abstract: VN66 TN0610L VN0606M
Contextual Info: Tem ic snlconlx_ TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (Q) V c S (th ) (V ) I d (A) TN0601L 1.8 @ V os = 10 V 0.5 to 2 0.47 VN0606L 3 @ V gs = 10 V 0.8 to 2 0.33

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

TN2524

Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110
Contextual Info: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs BVDSS Device V RDS(ON) max ID(ON) min (Ω) CISS max (A) (pF) VGS(TH) max (V) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2)

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178