2SC366 Search Results

2SC366 Datasheets (136)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SC366	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	71.89KB	1
2SC366	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	90.44KB	1
2SC366	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	36.41KB	1
2SC366	Unknown	Cross Reference Datasheet	Scan	PDF	33.54KB	1
2SC366	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	34.82KB	1
2SC366	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	39.42KB	1
2SC366	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	98.74KB	1
2SC366	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	104.71KB	2
2SC366	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF	200.99KB	2
2SC3660	NEC	Semiconductor Selection Guide 1995	Original	PDF	3.25MB	226
2SC3660	Great American Electronics	Silicon NPN high power UHF transistor	Scan	PDF	31.98KB	1
2SC3660	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF	55.35KB	1
2SC3660	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	89.6KB	2
2SC3660A	NEC	Semiconductor Selection Guide 1995	Original	PDF	3.25MB	226

2SC3660A	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	89.59KB	2
2SC3660A	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF	55.35KB	1
2SC3661	Kexin	NPN Epitaxial Planar Silicon Transistor	Original	PDF	33.61KB	1
2SC3661	Sanyo Semiconductor	High-gain, muting circuit	Original	PDF	87.57KB	3
2SC3661	Unknown	General Purpose Transistors	Scan	PDF	73.41KB	1
2SC3661	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	89.6KB	2

...

2SC366 Price and Stock

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onsemi 2SC3661-TB-E Trans GP BJT NPN 25V 0.3A 200mW 3-Pin Case CP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	2SC3661-TB-E		45,000		1,611	1 - 10 - 100 - 1000 - 10000 $0.21	Buy Now
	2SC3661-TB-E		16,000		1,611	1 - 10 - 100 - 1000 - 10000 $0.21	Buy Now
Rochester Electronics	2SC3661-TB-E		601,000		1	1 - 10 - 100 $0.22 1000 $0.19 10000 $0.17	Buy Now
onsemi 2SC3661-U-TB-E 2SC3661-U-TB-E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SC3661-U-TB-E		24,435		5,455	1 - 10 - 100 - 1000 - 10000 $0.06	Buy Now
Rochester Electronics	2SC3661-U-TB-E		24,435		1	1 - 10 - 100 $0.07 1000 $0.06 10000 $0.05	Buy Now
SANYO Semiconductor Co Ltd 2SC3661-TB-E Trans GP BJT NPN 25V 0.3A 200mW 3-Pin Case CP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	2SC3661-TB-E		3,000		1,611	1 - 10 - 100 - 1000 - 10000 $0.21	Buy Now
	2SC3661-TB-E		3,000		1,611	1 - 10 - 100 - 1000 - 10000 $0.21	Buy Now
Rochester Electronics	2SC3661-TB-E		39,000		1	1 - 10 - 100 $0.22 1000 $0.19 10000 $0.17	Buy Now
Toshiba America Electronic Components 2SC3668-Y,T2F(J
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SC3668-Y,T2F(J		25,600			1 $0.73 10 $0.73 100 $0.73 1000 $0.73 10000 $0.22	Buy Now
Toshiba America Electronic Components 2SC3669-Y,T2F(J
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SC3669-Y,T2F(J		22,413			1 $1.53 10 $1.53 100 $1.53 1000 $1.53 10000 $0.46	Buy Now

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2SC366 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 AUDIO POWER AMPLIFIER APPLICATIONS. • High DC Current Gain: MAXIMUM RATINGS Unit in mm hpE=100~320 (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage v CBO 30 V Collector-Emitter Voltage VCEO	OCR Scan	2sc3666 100ma 800ma	PDF
2-7D101A Abstract: 2SA1426 2SC3666 A1426 v30010 Contextual Info: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	2sa1426 2sc3666 2-7d101a a1426 +1v30010	PDF
c3665 Abstract: 2SC3665 2-7D101A 2SA1425 Contextual Info: 2SC3665 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3665 ○ 電力増幅用 ○ 励振段増幅用 • 単位: mm 2SA1425 とコンプリメンタリになります。絶対最大定格 (Ta = 25°C) 項目記号定	Original	2sc3665 2sa1425 2-7d101a 20070701-ja +1c3665	PDF
2-7D101A Abstract: 2SA1425 2SC3665 A1425 Contextual Info: 2SA1425 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1425 Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SC3665. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage	Original	2sa1425 2sc3665 2-7d101a a1425	PDF
c3666 Abstract: 2SC3666 2-7D101A Contextual Info: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	2sc3666 c3666 2-7d101a	PDF
Contextual Info: 2SA1426 TOSHIBA 2SA1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hpE : hjrE = 100~320 IW Output Applications. Complementary to 2SC3666. 7 .1 MAX MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2sa1426 2sc3666	PDF
Contextual Info: TO SHIBA 2SC3665 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3665 Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS DRIVER STAGE AM PLIFIER APPLICATIONS 7.1 M A X • Complementary to 2SA1425. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2sc3665 2sa1425	PDF
Contextual Info: T O S H IB A 2SC3669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 PO W ER AM PLIFIER APPLICATIONS Unit in mm PO W ER SWITCHING APPLICATIONS • • • Low Saturation Voltage : V q e (sat) = 0-5V(Max.) High Speed Switching Time : tstg = 1.0,«s (Typ.)	OCR Scan	2sc3669 2sa1429	PDF
2SD2334 Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062 Contextual Info: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187	OCR Scan	2sd2174 2sd2175 2sd2176 2sd2177 +152sd2185 2sd2186 2sd2187 2sd2188 2sd2189 2sd2190 2sd2334 2sc4814 2sd2076 2216y 2sd1546 2sd1930 2sd1755 2sc2562 2sc4062	PDF
rca 2n2147 Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200 Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer	Original	bfx69a 2n1594 bcw94a 2sc366g +152n1644a 2n2192 2n2192a 2n2192b mps650 rca 2n2147 2n2207 2n2183 rca 2n2196 2n2214 2n2161 2n2222a motorola 2n2204 2n2162 2n2200	PDF
Contextual Info: UTC 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES Low saturation voltage VCE sat = 0.5V(Max) High speed switching time: tstg=1.0 S(Typ.) 1 TO-252 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)	Original	2sc3669 o-252 qw-r209-015	PDF
c3666 Abstract: 2-7D101A 2SC3666 Contextual Info: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol	Original	2sc3666 c3666 2-7d101a	PDF
2-7D101A Abstract: 2SA1428 2SC3668 Contextual Info: TO SH IBA 2SC3668 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3668 Unit in mm POWER SWITCHING APPLICATIONS 7.1 M A X • • • Low Saturation Voltage : V c e (sat)“ 0.5V (Max.) High Speed Switching Time : tgtg^l.O/^siTyp.)	OCR Scan	2sc3668 2sa1428 2-7d101a	PDF
2-7D101A Abstract: 2SA1425 2SC3665 toshiba nq Contextual Info: TO SH IBA 2SC3665 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3665 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS 7.1 MAX • Complementary to 2SA1425. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC	OCR Scan	2sc3665 2sa1425 2-7d101a toshiba nq	PDF

2SC3661 Abstract: MARKING FY VEBO-15V N209 Low frequency general-purpose amplifiers, Contextual Info: Ordering number:EN1854A NPN Epitaxial Planar Silicon Transistor 2SC3661 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuit. unit:mm 2018A [2SC3661]	Original	en1854a 2sc3661 2sc3661-used vebo15v +4marking fy vebo-15v n209 low frequency general-purpose amplifiers	PDF
2SC3669 Abstract: 2-7D101A 2SA1429 Contextual Info: TO SH IBA 2SC3669 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 Unit in mm POWER SWITCHING APPLICATIONS • • • Low Saturation Voltage : V c e (sat)“ 0.5V (Max.) High Speed Switching Time : tgtg^l.O/^siTyp.)	OCR Scan	2sc3669 2sa1429 2-7d101a 20truments	PDF
C3665 transistor Abstract: c3665 2SC3665 2-7D101A 2SA1425 Contextual Info: 2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SA1425. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit	Original	2sc3665 2sa1425 c3665 transistor c3665 +12-7d101a	PDF
C3666 Abstract: 2-7D101A 2SC3666 Contextual Info: 2SC3666 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3666 ○ 低周波電力増幅用単位: mm • 直流電流増幅率が高い。 • 許容コレクタ損失が大きい。 : PC = 1000 mW : hFE(1) = 100~320 絶対最大定格 (Ta = 25°C)	Original	2sc3666 2-7d101a c3666	PDF
common collector applications Abstract: 2SC3669 Contextual Info: UTC 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES Low saturation voltage VCE sat = 0.5V(Max) High speed switching time: tstg=1.0 S(Typ.) 1 TO-252 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)	Original	2sc3669 o-252 qw-r209-015 common collector applications	PDF
2SC3660 Abstract: rf amplifier 100w linear amplifier 470-860 transistor npn 100w amplifier TRANSISTOR 246 Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2SC3660 Silicon NPN high power UHF transistor 2SC3660 is designed for Class AB Push Pull linear power amplifier applications in a common emitter configuration specifically in operating TV transmitters . Output Power: Frequency Range:	OCR Scan	2sc3660 g000d31 rf amplifier 100w linear amplifier 470-860 +2transistor npn 100w amplifier transistor 246	PDF
2-7D101A Abstract: 2SC3666 Contextual Info: TO SH IBA 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hpE (l) = 100~320 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage	OCR Scan	2sc3666 2-7d101a	PDF
2-7D101A Abstract: 2SA1425 2SC3665 Contextual Info: TO SH IBA 2SC3665 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3665 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS 7.1 MAX • Complementary to 2SA1425. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC	OCR Scan	2sc3665 2sa1425 2-7d101a	PDF
transistor npn 100w amplifier Abstract: 2SC3660 rf power amplifier 100w 470-860 rf amplifier 100w npn 28v 100w amplifier Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2SC3660 Silicon NPN high power UHF transistor 2SC3660 is designed for Class AB Push Pull linear power amplifier applications in a common emitter configuration specifically in operating TV transmitters . Output Power: Frequency Range:	OCR Scan	2sc3660 g000d31 transistor npn 100w amplifier rf power amplifier 100w +3470-860 rf amplifier 100w npn 28v 100w amplifier	PDF
C3669 Abstract: 2SC3669 2-7D101A 2SA1429 Contextual Info: 2SC3669 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3669 ○ 電力増幅用 ○ 電力スイッチング用単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)	Original	2sc3669 2sa1429 2-7d101a 20070701-ja +1c3669	PDF

2SC366 Search Results

2SC366 Datasheets (136)

2SC366 Price and Stock

onsemi 2SC3661-TB-E

onsemi 2SC3661-U-TB-E

SANYO Semiconductor Co Ltd 2SC3661-TB-E

Toshiba America Electronic Components 2SC3668-Y,T2F(J

Toshiba America Electronic Components 2SC3669-Y,T2F(J

2SC366 Datasheets Context Search

2-7D101A

c3665

2-7D101A

c3666

2SD2334

rca 2n2147

c3666

2-7D101A

2-7D101A

2SC3661

2SC3669

C3665 transistor

C3666

common collector applications

2SC3660

2-7D101A

2-7D101A

transistor npn 100w amplifier

C3669