2SA1429 Search Results

2SA1429 Datasheets (20)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SA1429	Toshiba	High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: MSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SC3669	Original	PDF	146.72KB	5
2SA1429	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	84.84KB	1
2SA1429	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	35.61KB	1
2SA1429	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	36.87KB	1
2SA1429	Unknown	Silicon PNP Transistor	Scan	PDF	197.13KB	3
2SA1429	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	106.17KB	2
2SA1429	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	34.32KB	1
2SA1429	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	43.89KB	1
2SA1429	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	110.67KB	1
2SA1429	Toshiba	Silicon PNP transistor for power amplifier and power switching	Scan	PDF	216.32KB	4
2SA1429	Toshiba	Silicon PNP Epitaxial Type Transistor	Scan	PDF	216.34KB	4
2SA1429-O	Toshiba	2SA1429 - TRANSISTOR 2000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7D101A, 3 PIN, BIP General Purpose Small Signal	Original	PDF	171.49KB	5
2SA1429-O	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	84.84KB	1
2SA1429O	Toshiba	Silicon PNP Epitaxial Transistor	Scan	PDF	127.41KB	3

2SA1429-Y	Toshiba	2SA1429 - TRANSISTOR 2000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7D101A, 3 PIN, BIP General Purpose Small Signal	Original	PDF	171.49KB	5
2SA1429-Y	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	84.84KB	1
2SA1429Y	Toshiba	Silicon PNP Epitaxial Transistor	Scan	PDF	127.41KB	3
2SA1429-Y(T2OMI,FM	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 80V SC71	Original	PDF	178.35KB
2SA1429-Y(T2TR,F,M	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 80V SC71	Original	PDF	178.35KB
2SA1429-Y(TPF2,F)	Toshiba	2SA1429 - TRANSISTOR PNP 80V 2A MSTM	Original	PDF	171.49KB	5

2SA1429 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
A1429 Abstract: 2-7D101A 2SA1429 2SC3669 Contextual Info: 2SA1429 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 2SA1429 ○ 電力増幅用 ○ 電力スイッチング用単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)	Original	2sa1429 2sc3669 2-7d101a 20070701-ja +1a1429	PDF
Contextual Info: TO SHIBA 2SA1429 2 S A 1 429 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 7.1 MAX Low Collector Saturation Voltage : VcE(sat) = -0.5V (Max.) (IC = - 1A)	OCR Scan	2sa1429 2sc3669 2-7d101a	PDF
A1429 Contextual Info: 2SA1429 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1429 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)	Original	2sa1429 2sc3669 2-7d101a a1429	PDF
Contextual Info: TOSHIBA 2SA1429 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 429 Unit in mm • Low Collector Saturation Voltage : VCE(sat) = -0 .5 V (Max.) (IC = - 1A) • High Speed Switching Time : tgtg = l.O/^s (Typ.)	OCR Scan	2sa1429 2sc3669 2-7d101a	PDF
A1429 Abstract: 2-7D101A 2SA1429 2SC3669 Contextual Info: 2SA1429 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1429 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)	Original	2sa1429 2sc3669 a1429 2-7d101a	PDF
Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 Unit in mm POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATION. • Low Saturation Voltage : VCE(sat)=0.5V (Max.) (IC=1A) • High Speed Switching Time: tstg= 1 '0us (Typ.) • Complementary to 2SA1429	OCR Scan	2sc3669 2sa1429	PDF
2SC3669 Abstract: 2SA1429 Contextual Info: TOSHIBA 2SC3669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS • • Low Saturation Voltage : Vce (sat) = 0-5V (Max.) High Speed Switching Time : tstg= 1.0/^s (Typ.) Complementary to 2SA1429	OCR Scan	2sc3669 2sa1429 961001eaa2	PDF
Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1429 U nit in mm POW ER AM PLIFIER APPLICATIO N S. POW ER SW ITCHIN G APPLICATIO N S. • • • Low Collector Saturation Voltage : v CE(sat) = - °-5V (Max.) (Iq = - 1A) High Speed Switching Time : tstg= 1.0/^s (Typ.)	OCR Scan	2sa1429 2sc3669	PDF
2-7D101A Abstract: 2SA1429 2SC3669 Contextual Info: TO SH IBA 2SA1429 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 429 7.1 MAX 3.8 32 Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (1^= -1 A ) — J". . •	OCR Scan	2sa1429 2sc3669 2-7d101a	PDF
2-7D101A Abstract: 2SA1429 2SC3669 Contextual Info: 2SA1429 TOSHIBA 2 S A 1 429 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 7.1 MAX Low Collector Saturation Voltage : v CE(sat)= -0 .5 V (Max.) (l£ = -1A )	OCR Scan	2sa1429 2sc3669 2-7d101a	PDF
2-7D101A Abstract: 2SA1429 2SC3669 A1429 Contextual Info: 2SA1429 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1429 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 s (typ.)	Original	2sa1429 2sc3669 2-7d101a a1429	PDF
2-7D101A Abstract: 2SA1429 2SC3669 Contextual Info: 2SA1429 TO S H IB A 2 S A 1 429 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 7.1 MAX Low Collector Saturation Voltage : VCE(sat)= -0 .5 V (Max.) (IC = -1 A )	OCR Scan	2sa1429 2sc3669 2-7d101a	PDF
A1429 Abstract: 2SC3669 2SA1429 2-7D101A Contextual Info: 2SA1429 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1429 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 s (typ.)	Original	2sa1429 2sc3669 a1429 2-7d101a	PDF
2-7D101A Abstract: 2SA1429 2SC3669 Contextual Info: 2SA1429 TO SH IBA 2 S A 1 429 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 7.1 M A X 2 .7 M A X • • • 1.0 Low Collector Saturation Voltage : v CE(sat)= -0 .5 V (Max.) (1^= -1A )	OCR Scan	2sa1429 2sc3669 2-7d101a	PDF

Contextual Info: T O S H IB A 2SC3669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 PO W ER AM PLIFIER APPLICATIONS Unit in mm PO W ER SWITCHING APPLICATIONS • • • Low Saturation Voltage : V q e (sat) = 0-5V(Max.) High Speed Switching Time : tstg = 1.0,«s (Typ.)	OCR Scan	2sc3669 2sa1429	PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2sc429gtm 2sc458 2sc458lg 2sc503 +162sc504 2sc510 2sc512 2sc519 2sc520a 2sc594 sn76131 tlo72cp toshiba 2n3055 m53207p 2n3055 toshiba kia7313ap kia7640ap la5530 m5l8155p tbb1458b	PDF
2SC3669 Abstract: 2-7D101A 2SA1429 Contextual Info: TO SH IBA 2SC3669 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 Unit in mm POWER SWITCHING APPLICATIONS • • • Low Saturation Voltage : V c e (sat)“ 0.5V (Max.) High Speed Switching Time : tgtg^l.O/^siTyp.)	OCR Scan	2sc3669 2sa1429 2-7d101a 20truments	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	sce0004l ttc4116 2sc4118 tta1586 +162sa1588 2sc4117 2sa1587 2sc5233 2sc4738 2sa1832 gt30f131 gt30f124 tk18a60v smd m5 transistor 6-pin smd transistor h2a npn gt50n322 marking smd pnp transistor h2a gt30j124 30f124 tpcp8r01	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	scj0004r sc-43 2sc1815 2sc732tm +142sc1959 2sa1015 2sc2240 2sa970 igbt gt30f124 igbt gt30j124 gt30f124 gt30j124 gt50n322 tk25e06k3 tpcp8r01 tk12a10k3 gt30g124 2sk3075	PDF
70H40 Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©	OCR Scan	2sa1162 2sa1163 2sc1815 2sa1015 +162sc2458 2sc2459 2sa1048 2sa1049 2sc2712 2sc2713 70h40 transistor equivalent d2012 2sc734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk for low noise audio amplifier applications 2sa970 bl equivalent 2sa776 gr	PDF
C3669 Abstract: 2SC3669 2-7D101A 2SA1429 Contextual Info: 2SC3669 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3669 ○ 電力増幅用 ○ 電力スイッチング用単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)	Original	2sc3669 2sa1429 2-7d101a 20070701-ja +1c3669	PDF
c3669 Abstract: 2SC3669 2-7D101A 2SA1429 Contextual Info: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.)	Original	2sc3669 2sa1429 c3669 2-7d101a	PDF
2sC5200, 2SA1943 Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current	Original	bce0016d 2sc5200, 2sa1943 2sa1941 equivalent 2sc5353 equivalent +72sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2sc2383 equivalent tpcp8l01 2sa1962 equivalent 2sc4793 2sa1837 2sa1013 equivalent	PDF
15J102 Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811	OCR Scan	2sa949u50vi 2ac2229 2sa1145u50v 2sc2705 +162sc2230 2sa817a 2sc1627a 2sa1811 2sc4707 2sa965 15j102 transistor 2sc4288a transistor 2sa 2sb 2sc 2sd drive ic 2sc3346 2sa 102 transistor transistor 2sa 101 50j301 02sc5030 t15j103 driver ic 2sc3346	PDF

2SA1429 Search Results

2SA1429 Datasheets (20)

2SA1429 Datasheets Context Search

A1429

A1429

A1429

2SC3669

2-7D101A

2-7D101A

2-7D101A

2-7D101A

A1429

2-7D101A

sn76131

2SC3669

GT30F131

IGBT GT30F124

70H40

C3669

c3669

2sC5200, 2SA1943

15J102