2SB504
Abstract: 2SB507 2SB506A 2SB508 2SB511 2SD325 2sb560 2SB506 2SB536 2SD331
Contextual Info: - 54 - Ta=25cC, *EP(äTc=25‘ C m % f fl £ & m VcBO VcEO lc ( D O Pc Pc* (V) (V) (A) (W) (W) ICBO (max) ( j ü A) % tä 4# te 0 ^ 2 5 *0 ) [*E P (ä typ 3 hF E VcB (V) (min) (max) Vc e (V) ¡ c/ I e (A) (max) (V) (V) Ic (A) Ib (A) 2SB434G LF PA/SW -60
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ta-25-c2sb434g2sb435g2sb502a+152sb503a2sb5042sb504a-60sd5522sb5522sd5532sb5072sb506a2sb5082sb5112sd3252sb5602sb5062sb5362sd331
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2SA1020Y
Abstract: 2SA1015LY 2SA10150 2SA1015L-Y 2SA10200 2SA12130 2SA661 TEC9015 2SA705 2SA1015L
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 Manufacturer Y(BR)CEO hFE Ie Max A fT (Hz) 50 50 50 50 50 50 50 50 50 50 100 100 100 100 100 100 100 100 100 120 2SA1326 TEDl602C NB122EH NB122FH
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tec9015b2sa6612sb10022sb1059+132sb740bft71bft812sa493g2sa1020y2sa1015ly2sa101502sa1015l-y2sa102002sa12130tec90152sa7052sa1015l
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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to3a
Abstract: 2SB536 T03B 2SB511 2SD331 2SD325 2SD3258 2SD314 2SB546A 2SD341
Contextual Info: - 218 - Ta=25T;, *EP(äTc=25*C M £ J± & m & (V) . Vc e o lc(DC) Pc (V) (A) (W) 1 Pc* icBO (W) imax) < jb A> V'CB (V) ft > (min) E fö 4# (max; 14 V’ cE (V) (Ta=25*C) [*EP(ätypfla VcE(sat vmaxj (V) Ic /I e (A) (V) Ic (A) 1b (A) 2SD124AH B \L PSW 75 50
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2sd124ah2sd125ah2sd126h2sd234g+162sd235g2sd2882sd2892sd313sb547at0-220aato3a2sb536t03b2sb5112sd3312sd3252sd32582sd3142sb546a2sd341
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2sc630
Abstract: KT817B IDB434 2SD130 2SB1003 2N3167 MOTOROLA 2sd1369 bd57 2SC790R 2N319
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T (V) (W) Min (Hz) r •CBO Max Max (A) (8) (CE)ut Max (Ohms) Top«r Max (°C) Package Style D vices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15
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kt817a2sd91idb1023idd1413+132sb10032sd1369bdy342n3632see00n2sc630kt817bidb4342sd1302n3167 motorolabd572sc790r2n319
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2SA490-0
Abstract: B0934 2SA699A matsua 2SB435Y 1S2525 2sb856 043C4 MJ2253 2SA1359Y MJE2370
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 - 45 50 B0934 B0934F B0934F 043C5 043C6 B0132 2N3025 PTC142 2SB744 2SB744 2SB503A 2SB503A-R 2SA748 2SA748 KT816B 2SA670 2SA671 2SB434 2SB434 ~~~:~:G-R 55 60 65 - 70 IOB434 2SB434R 2SB503A-O
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o-220abo-220ot-186o-126var+11o-127var2sa490-0b09342sa699a matsua2sb435y1s25252sb856043c4mj22532sa1359ymje2370
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