2SD130 Search Results

2SD1388

Abstract: 2SD1387 2SD1370 2SD1369 2SD1307 2SD1331 2SD1360 2SD1346 2SD1333 2SD1371
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 45W 2SD1301 1500 5 2A 130 3-12 10 1A (Tc=25ºC) 2SD1302 25

Hitachi DSA002756

Contextual Info: 2SD1306 Silicon NPN Epitaxial Application Low frequency amplifier, Muting Outline 2SD1306 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO

2SD1301

Contextual Info: 2SD1301 2SD1301 '> ij 3 > NPN 'J'M * ~ ?— ~r U- I T " N PN Triple Diffused Mesa /H o rizo n tal Deflection Output for Small Color TV Set H $$ ^ [/F e a tu re s • 5T's ;<9’-i t — Kl^liKo/Built-in damper diode on chip • r iiilh . in ji X -i v -f- > 9 „ /H ig h voltage, high speed switching

2SD1302

Abstract: 2sd1302 data sheet
Contextual Info: Transistor 2SD1302 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm • Features ● Low collector to emitter saturation voltage VCE sat . Low ON resistance Ron. High foward current transfer ratio hFE.

Contextual Info: Preliminary Datasheet 2SD1306 R07DS0280EJ0400 Rev.4.00 Jan 10, 2014 Silicon NPN Epitaxial Application Low frequency amplifier, Muting Outline RENESAS Package code: PLSP0003ZB-A Package name: MPAK 1. Emitter 2. Base 3. Collector 3 1 2 Absolute Maximum Ratings

Contextual Info: Preliminary Datasheet 2SD1306 R07DS0280EJ0300 Previous: REJ03G0784-0200 Rev.3.00 Mar 28, 2011 Silicon NPN Epitaxial Application Low frequency amplifier, Muting Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector

2SD1309

Abstract: d1309 BO150
Contextual Info: 2SD 1309 2SD1309 N P N + V h^ x ^ NPN Silicon Epitaxial Darlington Transistor Audio Frequency Amplifier and Low Speed Switching Industrial Use Xi f f l K M m / P ACKAGE DIMENSIONS # * / FEATURES > > O t e » 7 " ' V — o C - E Paliseli. II K / N - . y 'r — ^ X

2SD1308

Abstract: 2SB974
Contextual Info: SavantIC Semiconductor Product Specification 2SD1308 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2SB974 APPLICATIONS ·For audio frequency power amplifier and low speed switching industrial use

2SB974

Abstract: 2SD1308 transistor 2A k transistor 2A pnp 2SD130
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -2A ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -2A ·Complement to Type 2SD1308

Contextual Info: 2SD1306 Silicon NPN Epitaxial HITACHI Application Low frequency amplifier, Muting Outline MPAK 1. Emitter 2. Base 3. Collector 908 2SD1306 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage VcBO 30 V Collector to emitter voltage

2SD1306

Abstract: 2SD1306NDTL-E 2SD1306NETL-E SC-59A
Contextual Info: 2SD1306 Silicon NPN Epitaxial REJ03G0784-0200 Previous ADE-208-1144 Rev.2.00 Aug.10.2005 Application Low frequency amplifier, Muting Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Absolute Maximum Ratings

2SD1303

Contextual Info: ST 2SD1303 NPN Silicon Epitaxial Planar Transistor for audio muting application. On special request, these transistors can be manufactured in different pin configurations. Features ˙High emitter-base voltage VEBO=7.5V min * ˙High reverse hFE reverse hFE=20(min) (VCE=2V, IC=4mA)

2SD1303

Abstract: epitaxial transistor high voltage hFE-20
Contextual Info: ST 2SD1303 NPN Silicon Epitaxial Planar Transistor for audio muting application. On special request, these transistors can be manufactured in different pin configurations. Features ․High emitter-base voltage VEBO=7.5V min * ․High reverse hFE reverse hFE=20(min) (VCE=2V, IC=4mA)

2sd1304

Contextual Info: Transistor 2SD1304 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 1.45 0.95 1 3 +0.1 +0.2 0.65±0.15 0.95 2.9 –0.05 ● 0.65±0.15 Zener diode built in. Mini type package, allowing downsizing of the equipment and

2SD1302

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1302 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Low collector-emitter saturation voltage VCE(sat)

2SB1039

Abstract: 2SD1309 MP40 2SD1347 2SD1304 2SD1305 2SD1306 2SD1308 2SD1310 2SD1311
Contextual Info: - 244 - Ta=25tC, *EPííTc=25'C m % tt g 2SD1304 tëT LF A 2SD1305 HV LF A 2SD1306 1ST H i 2SD1308 H U LF PA/LS PSW 2SD1309 H S LF PA/LS PSW 2SD1310 LF A/Mut I VcBO VcEQ ice DC) Pe Pe* (V) (V) (A) (W) (W) I ÍCB0 (max) VcB (V) (UH) (min) Í1FE W íl (max)

Hitachi DSA0076

Abstract: 2SD1306 2SD1504
Contextual Info: 2SD1306 Silicon NPN Epitaxial ADE-208-1144 Z 1st. Edition Mar. 2001 Application Low frequency amplifier, Muting Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SD1306 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1302 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 5.1±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2

2SD1302

Contextual Info: Transistors 2SD1302 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Low collector-emitter saturation voltage VCE sat • Low ON resistance Ron • High forward current transfer ratio hFE

2SD1303

Contextual Info: ST 2SD1303 NPN Silicon Epitaxial Planar Transistor for audio muting application. On special request, these transistors can be manufactured in different pin configurations. Features ˙High emitter-base voltage VEBO=7.5V min * ˙High reverse hFE reverse hFE=20(min) (VCE=2V, IC=4mA)

Contextual Info: Preliminary Datasheet 2SD1306 R07DS0280EJ0300 Previous: REJ03G0784-0200 Rev.3.00 Mar 28, 2011 Silicon NPN Epitaxial Application Low frequency amplifier, Muting Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector

TO-92B

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1302 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Low collector-emitter saturation voltage VCE(sat)

transistor jp

Abstract: 2SD1308 2SB974 2T54 h13k
Contextual Info: 2S D 1308 2SD1308 7*JUM'> l NPNx. / |j y h ^ > ' > X ? NPN Silicon Epitaxial Darlington Transistor Audio Frequency Power Amplifier and „ Low Speed Switching Industrial Use i * >v n V nmm 2SD1308li, y-f > i L T llf iS ? ; h . 7 > ^ 'X ^ -C 'O A -F A 1 S t i,

2SD1303

Contextual Info: ST 2SD1303 NPN Silicon Epitaxial Planar Transistor for audio muting application. On special request, these transistors can be manufactured in different pin configurations. Features ˙High emitter-base voltage VEBO=7.5V min * ˙High reverse hFE reverse hFE=20(min) (VCE=2V, IC=4mA)