IXYSMOSFETS Search Results

IXGH17N100

Contextual Info: BIXYS jjjjjB jjj Low VCHH0IGBT High speed IGBT IXGH/IXGM17N100 IXGH/IXGM17 N100A VC E S ^C25 v C E sat 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V « Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE = 1 M fi

16N60

Abstract: 16n60 b
Contextual Info: Preliminary Data Sheet IXSA 16N60 IXSP 16N60 Low VCE sat IGBT1 LU ^C 25 V CE(sat)typ Short Circuit SOA Capability Symbol V CES Maximum Ratings Test Conditions v CES Tj = 25°C to 150°C 600 V VcoR T,J = 25°C to 150°C; RG E = 1 MCI 600 V VGES VG E M Continuous

ixysmosfets

Contextual Info: DIXYS Ultra-Low VCE sat IGBT vCES IXGH41N60 •c25 ^ C E (s a t) = 600 V = 76 A = 1.6 V Preliminary data Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V VCGft Tj = 25°C to 150°C; RGE = 1 MQ 600 V VGEg Continuous ±20 V VGEM Transient

Contextual Info: IGBT with Diode IXSN 35N100U1 v C ES ^C 25 v C E sat = 1000 V = 38 A = 3.5 V High Short Circuit SOA Capability éAi 2 4 Sym bol T est C onditions VC ES ^ = 25°C to 150°C 1000 V vC G R ^ = 25°C to 150°C; RGE = 1 MQ 1000 A VG ES Continuous ±20 V v G EM

IRFP450 Power Mosfet

Contextual Info: Standard Power MOSFET IRFP450 VDSS = 500 V ^D co nt — 14 A ^ D S (o n ) = 0 -4 0 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VOSS T j = 25°C to 150°C 500 V Voc« V«, T j = 25°C to 150°C; Ros = 1 M£2 500 V C ontinuous ±20

Contextual Info: 1IXYS I MegaMOS FET IRFP470 V DSS D cont N-Channel Enhancement Mode p DS(on) Symbol Test Conditions Maximum Ratings V DSS ^ = 25 °C to 150°C 500 V v DGR ^ = 25 °C to 150°C; RQS = 1 M il 500 V V GS V GSM Continuous ±20 V Transient ±30 V ^D25 Tc = 25 °C

Contextual Info: v. High Current MegaMOS FET IXTK 74N20 VDSS D 25 RDS on N-Channel Enhancement Mode = 200 V = 74 A = 35 mii TO-264 AA ' DGR T, = 2 5°C to 150°C; f^s= 1.0 Mfì es Continuous G SM Transient D 25 200 ±20 ±30 Tc = 25° C Tc = 2 5 °C, pulse width limited byJ TJM

001-045

Contextual Info: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGH 15N120B IXGT 15N120B V CES ^C25 V CE sat ^fi(typ) Maximum Ratings Symbol TestC onditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20

VMO 440

Abstract: ixys VMO 440
Contextual Info: DIXYS HiPerFET MOSFET Module VMO 550-01F VDSS = 100V I D25 = 590 A RDS on = 2 .1 m Q N-Channel Enhancement Mode Preliminary Data Symbol Test Conditions Maximum Ratings VDSS Tj = 25°C to 150°C 100 V v MR Tj = 25°C to 150°C; RGS = 10 k£2 100 V Vos Continuous

mq68

Contextual Info: OIXYS VDSS High Current MegaMOS FET IXTK 74 N20 IXTH 68 N20 200 V 200 V RDS on ^D25 74 A 35 mQ 68 A 35 mQ N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings VOSS Tj = 25 °C to150 °C 200 V V™ Tj = 25°C to 150°C; RGS= 1 .0 M il

Contextual Info: □ IX Y S Preliminary data High Speed IGBT IXSH10N60 IXSH10N60A Short Circuit SOA Capability <> V CES *C 25 V CE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V TO-247 AD Symbol Test Conditions VCES Tj = 25° C to 150°C 600 V Vtcgr Tj = 25°C to 150°C; RGE = 1 MD

Contextual Info: □ IXYS H H ifl JL æ* X HiPerFET IXFN120N20 Power MOSFETs OD N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr V DSS v DGR ^ ^ v GS VGSM ^D25 ” 200 V 120 A 17 m Q t < 250 ns /|[~ 1 G VI. " 1 I Preliminary data sheet TestConditions = R DS on =

38N60

Contextual Info: Ultra-Low VCE sat IGBT IXGH 38N60 Symbol Test Conditions VCES ^ VCGR Tj = 25°C to 150°C; RGE= 1 M fi Maximum Ratings = 25°C to 150°C 600 V 600 V v GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 76 A ^C90 Tc = 90°C 38 A ^CM Tc = 25°C, 1 ms

Contextual Info: v Low VCE sst High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A « Symbol Test Conditions vCES Tj = 25°C to 150°C 1000 V V cG R ^ 1000 V V GES Maximum Ratings = 25°C to 150°C; RGE = 1 Mi2 v Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C 50 A ^C90

TEST20

Contextual Info: □ IXYS vDSS High Current Power MOSFET IXTN 58N50 IXTN 61N50 500 V 500 V p ^D25 DS on 58 A 85 m fì 61 A 75 m fì N-Channel Enhancement Mode Preliminary Data os Symbol TestC onditions v DSS Tj = 2 5 °C to 150°C vDGR T, = 25°C to 150°C; £ s= 1.0 M il

.24n50

Abstract: xgh2 IXGH24N50BU1 IXGH24N60BU1
Contextual Info: Preliminary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES *C 25 VCE(sat) t. 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack T0-247 SMD (24N*BU1 S) Symbol TestConditions I C (TAB) Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C

Contextual Info: Not for new designs Low V IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 Combi Packs v CES ^C25 VC E sat 600 V 600 V 40 A 40 A 2.5 V 3.0 V <?C G Short Circuit S O A Capability OE Symbol Test Conditions VCES ^ v CGR Maximum Ratings

30n60u

Abstract: 30N60A ixgh30n60a IXGM30N60
Contextual Info: L o w V cE s a t IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A High speed IGBT Symbol Test Conditions V y ces Tj = 25°C to 150°C 600 V v CGR ^ 600 V VGES Continuous ±20 V v GEM T ransient ±30 V *C25 Tc = 25°C 50 A ^C90 T0 = 90°C 30 A ^c m Tc = 25°C, 1 ms

50n50

Abstract: IXFK55N50 ISOPLUS247 55n50
Contextual Info: Advanced Technical Information □ IX Y S V DSS HiPerFET Power MOSFETs ISOPLUS247™ IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface D ^D25 500 V 43 A 500 V 48 A t rr < 250 ns DS(on) 100 mQ 80 mQ Single MOSFET Die Symbol TestConditions v Tj = 25°C to 150°C

IXSH35N140A

Abstract: 53al bj 113
Contextual Info: □ IXYS : Advanced data v CES High Voltage, High speed IGBT IX S H 35N 140A 1400 V IX S H 35 N 1 3 5A 1350 V ^C25 VCE sat 70 A 70 A 4V 4V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions v* CHS Tj = 25°C to 150°C v* CGR ^ v GES Continuous

Contextual Info: D 1 X Y S Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S Combi Pack v CES ^C25 vv CE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N 60AU 1S) Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600

Contextual Info: □IXYS Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH10N60U1 IXGH10N60AU1 VCES ^C25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 MQ

Contextual Info: □IXYS High Current MegaMOS FET IXTK 74 N20 IXTH 68 N20 V DSS ^D25 200 V 200 V 74 A 68 A D DS on 35 mQ 35 mQ N-Channel Enhancement Mode Preliminary data Symbol Maximum ratings Test conditions V DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS=1.0 M£2

Contextual Info: Low VCE s>t IGBT High speed IGBT IXGH10N100 IXGH10N100A « VC E S ^C25 V * C E (sat) 1000 V 1000V 20 A 20 A 3.5 V 4.0 V Symbol Test Conditions v CES Tj = 25°C to 150°C 1000 V ^CGR Tj = 25°C to 150°C; RGE= 1 M£2 1000 V v" ges v GEM Continuous ±20 V T ransient