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Infineon Technologies AG IKW15N120BH6XKSA1 Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IKW15N120BH6XKSA1		88		1	1 $3.36 10 $2.30 100 $1.87 1000 $1.73 10000 $1.73	Buy Now
Avnet Americas	IKW15N120BH6XKSA1	Tube		36 Weeks	480	1 - 10 - 100 - 1000 $1.18 10000 $1.02	Buy Now
Mouser Electronics	IKW15N120BH6XKSA1		766			1 $3.70 10 $2.37 100 $1.41 1000 $1.28 10000 $1.23	Buy Now
Newark	IKW15N120BH6XKSA1	Bulk	1,180		1	1 $3.96 10 $3.29 100 $1.84 1000 $1.63 10000 $1.63	Buy Now
EBV Elektronik	IKW15N120BH6XKSA1			37 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Vyrian	IKW15N120BH6XKSA1		7,345			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXGT15N120BD1 IGBTs 30 Amps 1200V 3.2 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXGT15N120BD1					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXGH15N120B IGBTs 30 Amps 1200V 3.2 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXGH15N120B					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXGA15N120B IGBTs 30 Amps 1200V 3.2 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXGA15N120B					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXST15N120B IGBTs 30 Amps 1200V 3.4 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXST15N120B					1 - 10 - 100 - 1000 - 10000 -	Get Quote

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15N120B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
15N12 Abstract: 575 C2 Contextual Info: HiPerFASTTM IGBT IXGA 15N120B IXGP 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES	Original	15n120b o-220ab o-263 15n12 +1575 c2	PDF
Contextual Info: IXSH 15N120B I = 30 A C25 IXST 15N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW	Original	15n120b o-247	PDF
15N120BD1 Abstract: 15N120 15N120CD1 IXGT15N120BD1 Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15n120bd1 15n120cd1 o-247ad 15n120 +1ixgt15n120bd1	PDF
IXSH15N120B Contextual Info: IXSH 15N120B I = 30 A C25 IXST 15N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200	Original	15n120b o-247 o-268 13/1or +1ixsh15n120b	PDF
15N120 Contextual Info: IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT with Diode Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15n120bd1 15n120	PDF
Contextual Info: Advanced Technical Information HIGH Voltage IGBT with Diode = 30 A IXSH 15N120BD1 IC25 IXST 15N120BD1 V = 1200 V CES VCE sat = 3.4 V "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15n120bd1 o-247	PDF
001-045 Contextual Info: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGH 15N120B IXGT 15N120B V CES ^C25 V CE sat ^fi(typ) Maximum Ratings Symbol TestC onditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20	OCR Scan	15n120b o-268 001-045	PDF
RGE 17-18 Abstract: 10i2 TRI 1461 Contextual Info: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGA 15N120B IXGP 15N120B V CES IC25 V CE sat ^ fi(typ) Symbol T e s tC o n d itio n s V CES ^ = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 1200 V V GES V GEM Continuous ±20 V	OCR Scan	15n120b t0-220 o-263 rge 17-18 +210i2 tri 1461	PDF
15N120BD1 Abstract: 15N120CD1 IXGT15N120BD1 Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15n120bd1 15n120cd1 o-247ad o-268 +1ixgt15n120bd1	PDF
Contextual Info: HiPerFASTTM IGBT IXGA 15N120B IXGP 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 V	Original	15n120b o-220 o-263	PDF
Contextual Info: HiPerFASTTM IGBT IXGH 15N120B IXGT 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20	Original	15n120b o-247 o-268 o-268aa	PDF
Contextual Info: HiPerFASTTM IGBT IXGH 15N120B IXGT 15N120B VCES = 1200 V IC25 = 30 A VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20	Original	15n120b o-247 o-268 o-268aa	PDF
Contextual Info: Advanced Technical Information HiPerFASTTM IGBT IXGH 15N120B VCES = 1200 V = 30 A IXGT 15N120B IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20	Original	15n120b o-268 o-247	PDF
98922 Abstract: 15N1 TO-263 footprint 15N120B 15n120 Contextual Info: Advance Technical Information HIGH Voltage IGBT IXSA 15N120B IXSP 15N120B "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	15n120b o-220ab 728b1 98922 +315n1 to-263 footprint 15n120	PDF

Contextual Info: HiPerFASTTM IGBT IXGA 15N120B IXGP 15N120B VCES = 1200 V IC25 = 30 A VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES	Original	15n120b o-220ab o-263	PDF
15N120B2 Abstract: IXGP15N120B2 IXGA15N120B2 Contextual Info: HiPerFASTTM IGBT VCES IC25 VCE sat IXGA 15N120B2 IXGP 15N120B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching =1200 V = 30 A = 3.5 V = 137 ns tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR	Original	15n120b2 o-220ab o-263 065b1 +4728b1 123b1 ixgp15n120b2 ixga15n120b2	PDF
15N120CD1 Abstract: 15N120 GC smd diode IXGT15N120BD1 smd diode Lf 047 Contextual Info: □ IXYS Advanced Technical Information V DSS Low VrF, n IGBT with Diode CE sat IXGH/T 15N120BD1 IXGH/T 15N120CD1 ^C25 1200 V 30 A 1200 V 30 A V CE(sat) 3.2 V 3.8 V Combi Pack Symbol TestConditions Maximum Ratings V C ES T j = 25°C to 150°C 1200 V V CGR	OCR Scan	15n120bd1 15n120cd1 o-268 15n120 +3gc smd diode ixgt15n120bd1 smd diode lf 047	PDF
125OC Abstract: 15N12 Contextual Info: HiPerFASTTM IGBT IXGH 15N120B VCES = 1200 V = 30 A IXGT 15N120B IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient	Original	15n120b o-268 o-247 13/10nm/+4ixgh15n120b-p2 728b1 125oc 15n12	PDF
Contextual Info: IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT with Diode Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15n120bd1 o-247 o-268	PDF
125OC Contextual Info: HiPerFASTTM IGBT IXGH 15N120B VCES IXGT 15N120B IC25 VCE sat = 1200 = 30 = 3.2 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	15n120b ic110 o-268 o-247 +2728b1 125oc	PDF
IXGT15N120BD1 Abstract: 15N120BD1 Contextual Info: Advanced Technical Information VDSS Low VCE sat IGBT with Diode High Speed IGBT with Diode IXGH/T 15N120BD1 IXGH/T 15N120CD1 Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES	Original	15n120bd1 15n120cd1 o-247ad o-268 +1ixgt15n120bd1	PDF
Contextual Info: IXSH 15N120B I = 30 A C25 IXST 15N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW	Original	15n120b o-247	PDF
Contextual Info: Advance Technical Information HIGH Voltage IGBT IXSA 15N120B IXSP 15N120B "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	15n120b o-220ab 728b1	PDF
15n120 Abstract: 15N120CD1 15N120BD1 IGBT g Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15n120bd1 15n120cd1 o-247ad 15n120 +1igbt g	PDF

15N120B Search Results

15N120B Price and Stock

Infineon Technologies AG IKW15N120BH6XKSA1

IXYS Corporation IXGT15N120BD1

IXYS Corporation IXGH15N120B

IXYS Corporation IXGA15N120B

IXYS Corporation IXST15N120B

15N120B Datasheets Context Search

15N12

15N120BD1

IXSH15N120B

15N120

001-045

RGE 17-18

15N120BD1

98922

15N120B2

15N120CD1

125OC

125OC

IXGT15N120BD1

15n120