10I2 Search Results

Contextual Info: S eries Series 3G4 Electrical Specifications 364 3/8 in. sq. .5 Watt Multi-turn. S e a le d C e r m e t per MIL-R-22097 where para, is noted T r im m e r Resistance Range 10i2 thru 2 megohms Resistance Tolerance 10% Power Rating 0.5 watts at 85°C derated linearly to zero watts at 125°C.

MCIMX28RM

Abstract: Freescale i.MX28 diagram LG LCD TV circuits led matrix 2388 rgb
Contextual Info: i.MX28 Applications Processor Reference Manual Document Number: MCIMX28RM Rev 2, 08/2013 i.MX28 Applications Processor Reference Manual, Rev. 2, 08/2013 2 Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1 Product Overview 1.1 i.MX28

SD MOSFET DRIVE 4468 8 PIN

Abstract: eltek rectifier module circuit diagram IRF830 smps design with TL431 UNITRODE applications handbook uc3842 -96 UC3842 smps design with TL431 3842 smps battery charger circuit electronic transformer halogen ret 220c 500 WATT smps using ka3844 eltek smps 1000 si 48v tpa 5017
Contextual Info: You are in Databook Vol. 2b • Click for Main Menu Product Categories CLICK ANY ITEM Return to Main Menu Volume 2b Table of Contents Volume 2b Part Number and App. Note/Hint Index General Information PC Card Power Protected Switches Low-Dropout Linear Voltage Regulators

LTC6941

Contextual Info: r r u r m TECHNOLOGY LTC694-3.3/LTC695-3.3 3.3V Microprocessor Supervisory Circuits F€flTUR€S D CSCRIPTIOn • Guaranteed Reset Assertion at Vcc = 1V ■ Pin Compatible with LTC694/LTC695 for 3.3V Systems ■ 200 jA Typical Supply Current ■ Fast (30ns Typ On-Board Gating of RAM Chip

Contextual Info: MIC5022 Half-Bridge MOSFET Driver Preliminary Information General Description Features The MIC5022 half-bridge MOSFET driver is designed to operate at frequencies up to 100kHz and is an ideal choice for high speed applications such as motor control and SMPS

Contextual Info: / T u i m TECHNOLOGY Gain Bandwidth Product, Av = +1 Slew Rate Low Cost Output Current Settling Time Differential Gain Error Differential Phase Error High Open Loop Gain Single Supply +5V Operation Output Shutdown flP P llC flT IO n S • ■ ■ ■ ■ Ultra High Speed

MAX791

Contextual Info: 19-0075; Rev 2; 5/93 y i / i y i x i > u i M icroprocessor Supervisory C ircu it The MAX791 microprocessor jiP supervisory circuit reduces the complexity and number of components needed to monitor power-supply and battery-control functions in ¡xP systems. The 60(iA supply current makes

Contextual Info: VPR -WW- C o deco C o r p o r a t io n o f V erm o n t A Division of Codeco Corp. Series: SM Surface Mount Wirewound Resistors Codeco's SM series resistors are designed for use where the application is too severe for standard film resistors. These parts are molded into a rectangular shape to insure greater uniformity, easier handling, and

Contextual Info: MIC5021 High-Speed High-Side MOSFET Driver Preliminary Information Features General Description 12V to 36V operation 550ns rise/fall tim e driving 2000pF TTL com patible input with internal pull-down resistor O vercurrent limit Gate to source protection Internal charge pump

IRG4PH40U-E

Abstract: IRG4PH40U wifi 11n impedance cs 308 utl ups
Contextual Info: International IOR Rectifier PD - 9.1 612B IRG4PH40U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

H5007 driver

Abstract: IN5005 IN3000 1H5007 lg fbt IN3H00 IH5005 IH5006 IH5007 L55c
Contextual Info: D IN n n lP ID lL FEA TU R ES • Gate Lead Available fo r N ulling Charge Injection Voltage • Expansion C apability Available • Each Channel C om plete—Interfaces W ith M ost Integrated Logic • Low OFF power dissipation, 1 mW • Low r DS 0N , 10Î2 Max on IH 5005

ph40k

Contextual Info: International I«R Rectifier PD - 9 .1 5 7 8A IRG4 PH4 0 K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10[J.S, Vcc = 720V , T j = 125°C, Vg e = 1 5 V

Contextual Info: HFA3524 HARRIS S E M I C O N D U C T O R PRELIMINARY February 1996 2.5GHz/600MHz Dual Frequency Synthesizer Description Features • 2.7V to 5.5V Operation • Low Current Consumption • Selectable Powerdown Mode lcc = 1^A Typical at 3V • Dual Modulus Prescaler, 32/33 or 64/65

of RAS 0510 relay

Abstract: relay RAS 0510 RAS 0510 relay datasheet of RAS 0510 relay
Contextual Info: /T 7 ^ 7 # S G S -IH O M S O N . liiiD D tg œ iiiL iig T r m n tê S L 3 0 3 7 SUBSCRIBER LINE INTERFACE C IR C U IT PR ELIM IN A R Y DATA • MONOCHIP SILICON SLIC SUITABLE FOR PUBLIC/PRIVATE APPLICATIONS ■ IMPLEMENTS ALL KEY FEATURES OF THE BORSCHT FUNCTION

TLQ621

Contextual Info: GG E3 4 31 b SCS-THOMSON ¡ meïMMes S G S-THOMSON 'T " « -TL062 TL062A-TL062B 3QE D LOW POWER J-FET INPUT DUAL OP-AMPs • VERY LOW POWER CONSUMPTION ■ WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGES ■ LOW INPUT BIAS AND OFFSET CURRENTS ■ TYPICAL SUPPLY CURRENT : 200

Contextual Info: 5 7 . SGS-mOMSON A M80912-085 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS REFRACTO RY/G OLD METALLIZATION EM ITTER SITE BALLASTED 5:1 VSW R CAPABILITY LOW THERMAL RESISTANCE IN PU T/O U TPU T MATCHING OVERLAY GEOM ETRY METAL/CERAMIC H ERM ETIC PACKAGE

Contextual Info: HUF75344G3, HUF75344P3, HUF75344S3, HUF75344S3S Semiconductor Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: PD - 9.1654A International I R Rectifier IR G 4 B C 4 0 W INSULATED GATE BIPOLAR TRANSISTOR Features c • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies

Contextual Info: 7/ SGS-THOMSON CLP30-200B1 ILI Application Specific Discretes A.S.D. O VERVO LTAG E AND O VERCURRENT PROTECTION FOR TELECOM LINE MAIN APPLICATIONS Any telecom equipm ent submitted to transient overvoltages and lightning strikes such as : • Analog and ISDN line cards

Contextual Info: UCC3951 ADVANCED INFORMATION UNITRODE FEATURES DESCRIPTION • Measures Individual Cell Voltage for Three or Four Lithium-Ion Cells • Measures Battery Pack Current and Temperature • 10 Bit A/D with Microprocessor Interface • Hardware Overcharge, Over-Discharge, and

QD03

Contextual Info: ISO-CMOS MT093 8 x 1 2 Analog Switch Array Features ISSUE 1 Internal control latches and address decoder Ordering Information MT093AC 40 Pin Ceramic DIP MT093AE 40 Pin Plastic DIP MT093AP 44 Pin PLCC 0° to 70°C Short set-up and hold times Wide operating voltage: 4.5V to 14.5V

AMBA AXI dma controller designer user guide

Abstract: MCIMX28RM hdmi mhl transmitter I.MX28 TCD1304 transistor W2W STMP37xx TCD1304DG TFT 2.4"-2.5" color RGB-18 Bit control DRAM 2164
Contextual Info: i.MX28 Applications Processor Reference Manual Document Number: MCIMX28RM Rev. 1, 2010 i.MX28 Applications Processor Reference Manual, Rev. 1, 2010 2 Freescale Semiconductor, Inc. Contents Section Number Title Page Chapter 1 Product Overview 1.1 i.MX28

Contextual Info: Special Resistive Chip Devices Low Capacitance, High Frequency Q uortz Substrates EFI m anufactures tw o types of self passivating tantalum nitride chip resistors on quartz sub­ strates as w ell as several custom special purpose devices. The insulating properties of the quartz

qml-38535

Abstract: 54ACT 54ACT240 GDFP2-F20 CQCC2-N20
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Add RHA data. Editorial changes throughout. - jak 92-07-09 Monica L. Poelking Change delay time for tpLz and tpHz for device class M. Editorial changes throughout - jak. 99-02-02 Monica L. Poelking REV SHEET