ZVNL120 Search Results

Contextual Info: ZVNL120C Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)200Í I(D) Max. (A)180m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)

ZVNL12

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 200 Volt VDS * R DS on =10£2 * Low threshold APPLICATIONS * Telephone handsets REFER TO ZVNL120A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE 200

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94_ FEATURES * 200 Volt V DS * RDS on =10« * Low threshold APPLICATIONS * Telephone handsets REFER TO ZVNL120A FOR GRAPHS ABSOLUTE M A X IM U M RATINGS. SY M B O L PARAM ETER

ZVNL120A

Abstract: ZVNL120C
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVNL120C ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =10Ω * Low threshold APPLICATIONS * Telephone handsets G D S E-Line TO92 Compatible REFER TO ZVNL120A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET ISSUE 2 - JANUARY 1996 FEATURES * VDS - 200V * RDS ON - 10Ω ZVNL120G ✪ D S PARTMARKING DETAIL - ZVNL120 D G ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-So ur ce Vo l t ag e

Contextual Info: ZVNL120Z Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)270m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC)-55

ZVNL120Z

Abstract: DMOSFET
Contextual Info: S0T89 N-CHANNEL ENHANCEMENT MODE VERTICAL D.MOSFET ZVIML120Z PARTMARKING DETAIL: ZVNL120Z - L12 * FOR TYPICAL CHARACTERISTICS GRAPHS SEE ZVNL120G DATA SHEET ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BOL Drain-Source Voltage Continuous Drain Current at Ta = 25°C

ZVNL120

Contextual Info: PLESSEY s e u i c o n d /d i s c r e t e ]>F|7220S33 DODSSTl S | ~ 7220533 PLESSEY SEMICOND/DISCRETE 95D 05591 T - '3 5 '- '2 N-channel enhancement mode vertical DMOS FET S' ZVNL120 FEATURES • Compact geometry • Fast sw itching speeds • No secondary breakdown

Contextual Info: ZVNL120AM1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)180m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)

fet to92

Abstract: ZVNL120A ZVNL120 DSA003785 2V50S DS200
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVNL120A TYPICAL CHARACTERISTICS VGS= 10V 8V 6V 1.2 5V 1.0 0.8 4V 0.6 0.4 3V 0.2 2V 5 10 15 20 25 30 35 40 45 4V 0.6 3V 0.2 2V 50 6 8 Saturation Characteristics 20V 1.2 1.0 10V 0.8 0.6 0.4 0.2 1 2 3 4 5 6 7 8 9

ZVN0117TA

Abstract: t50c
Contextual Info: Not Recommended for New Design Please Use ZVNL120A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN0117TA ISSUE 1 – APRIL 94 FEATURES * 170 Volt BVDS APPLICATIONS * Telephone handsets D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

Contextual Info: ZVNL120G Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)320m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2 Minimum Operating Temp (øC)-55

Contextual Info: ZVNL120A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)200Í I(D) Max. (A)180m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DM O S FET IS S IIF 0 . I A N 1 I A R V 1QQR ZVNL120G O FEATURES » V DS - 200V * RDS ON '10i2 P A R T M A R K IN G D ET A IL - ZVNL120 G u ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L VALUE UNIT

partmarking 6 C

Abstract: ZVNL120 ZVNL120G
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET ISSUE 2 - JANUARY 1996 FEATURES * VDS - 200V * RDS ON - 10Ω ZVNL120G ✪ D S PARTMARKING DETAIL - ZVNL120 D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS

Contextual Info: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVNL120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =10Ω * Low threshold D G APPLICATIONS * Telephone handsets S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT

ZVNL120A

Contextual Info: N-CHANNEL ENHANCEMENT ZVNL120A MODE VERTICAL DMOS FET ! L ISSUE 2- MARCH 94 FEATURES 2oovoltvD~ * *R 4 / l S m)=lOi’ Lowthreshold * ~}~ f GS APPLICATIONS * Telephone handsets E-Line n ~ ABSOLUTE MAXIMUM Continuous 1 RATINGS. Drain Current at Tamb=250C =~

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DM O S FET IS S U E 2 - J A N U A R Y 1996 ZVNL120G . . O. FEATURES * V O S -2 0 0 V R DS ON >' 10£2 s P A R T M A R K IN G D E T A IL - Z V N L 1 2 0

RJ11 socket connector pinout

Abstract: LMC6482n TP5088 telephone circuit with dtmf tp5088 db9f pinout RD2 TP10 DTMF fsk cli circuit LM317t circuit REPLACEMENT FOR LM317t CMX602B
Contextual Info: EV6021 Evaluation Kit User Manual UM6021/4 August 2000 1.0 Features Advance Information • For CMX602B Product Evaluation • User’s Prototyping Area • Adjunct Box or Feature Phone Configuration • Socketed Space for Optional and Telco-Specific Components

FXT2222A

Abstract: FXT2907A FXT3904 FXT3906 ZVN2110C ZVN2120C ZVN4206C ZVNL120C ZVP2110C ZVP2120C
Contextual Info: CENTRE COLLECTOR E-LINE TABLE 6: SW ITCH IN G T R A N SIST O R S Type V ceo Max • V CE sat at Max. •c Min at h FE at Iß •c h Max. switching times !c to n ^o ff ns mA V mA V mA mA Min. Max. mA MHz mA ns F XT2222A 40 800 1.0 500 50 100 300 150 300 20

Contextual Info: bGE D • ZETEX SEMICONDUCTORS 4 tlt:J7DS?ô ÜQD?bûS b 3 fi ■ ZETB CENTRE BASE E-LINE 'M V 'P' Channel Small Signal MOSFETs Part Number BV dss Id 'dm V mA A V Min. VcSlth Max. a •o mA ÎÎ a Max. R d S I o ii ) Id mA Pd VP w ZVP0545AM 1 -450 -45 - 0 .4

Contextual Info: D SbE • ^70576 0D07052 7Tb H Z E T B SEMICONDUCTOR DICE MOSFETs - N-CHANNEL B V 0SS Dice type ZVN0540 Min. ZETEX f'DSIonI Max. at lD V qs SEMICONDUCTORS Max. IDSS at Max. IGSS at 'd m Rated VDS V GS=20V Min. atV0S ^GS th Chip Min. Max. at lD geometry at

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP