70S7FL Search Results

Contextual Info: ZETEX SEM ICONDU CTOR S IbE D • c^70S7fl 000bfl7fl b ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS \ ' Z c\-2-3> NPN HIGH VOLTAGE Dice type VCBO Min VCEO Min Volts Volts •cBO , Max a t VCB nA Volts at M ilt Max v« mA V o lt* V easw ■ at lc

ds132

Contextual Info: SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BST86 FEATURES: PARTMARKING DETAIL - KO ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 180 UNIT V Continuous Drain Current at Ta = 25°C •d 300 mA mA Pulse Drain Current taM

Contextual Info: bOE D • CH ? Ü 5 7 B 0007210 00e! « Z E T B ZETEX SEMICONDUCTORS IMPIM Silicon Planar High Voltage Transistors M PSA42 M PSA43 D E S C R IP T IO N T h ese plastic encapsulated, general purp ose transistors are d esigned for applications requiring high breakdow n voltages, low

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 - M A Y 94_ FEATURES * 12 Volt V CE0 * Gain of 400 at lc=3 A m p s * Very low saturation voltage A P P L IC A T IO N S * Darlington replacement * Flash gu n convertors

ZVNL120Z

Abstract: DMOSFET
Contextual Info: S0T89 N-CHANNEL ENHANCEMENT MODE VERTICAL D.MOSFET ZVIML120Z PARTMARKING DETAIL: ZVNL120Z - L12 * FOR TYPICAL CHARACTERISTICS GRAPHS SEE ZVNL120G DATA SHEET ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BOL Drain-Source Voltage Continuous Drain Current at Ta = 25°C

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ISSU E 1 - JU L Y FEATU RES * 300 Volt V.CEO 0.5 Amp continuous current P,o,= 1 Watt E E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94_ FEATURES * 60 Volt V DS * R DS on = 2 £ i ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Drain-Source Voltage Continuous Drain Current at Tamtp25°C VALUE UNIT V DS 60

ZVN2110

Abstract: Zetex dmos ZVIM2110 ZVN2110B ZVN211 F-127 ZVN2110A ZVN2110C ZVN2110E F131
Contextual Info: J> bOE ^70570 • ZETEX 0007027 6 TÔ I Z E T B —I SEMICONDUCTORS N-channel enhancement mode vertical D M O S FET ZVN 2110 F EA T U R E S • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - AUGUST 1995 O_ FEATURES * Suitable fo r AF drivers and ou tput stages * High collector current and Low VCE sat COMPLEMENTARY TYPE - BCP53 PARTMARKING DETAILS - BCP56 BCP56 - 1 0 B C P 5 6-1 6

analogue ohmmeter circuit diagram

Abstract: transistor tt 2170 em digital ic cd 4066 BUT18
Contextual Info: ZE TE X INC TS » • TÌ70570 DDDbCm 4 ■ 95D 06 0 9 9 T 'S t - t O - e S " ZN451E ZN451CJ 3 y2 digit DVM 1C with external auto-zero DESCRIPTION EATURES External circuits may be included in the auto-zero loop ’ Full-scale reading 1 .9 9 9 m V or lower

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424A ISSUE 2 January 1994_ FEATURES * 240 Volt VDS * R D S o n = 4 ' 3 i i t y P ' 031 a t V G S = 2 -5 V * Low threshold APPLICATIONS * Earth recall and dialling switches * Electronic hook switches