ZVNL120A Search Results

ZVNL12

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 200 Volt VDS * R DS on =10£2 * Low threshold APPLICATIONS * Telephone handsets REFER TO ZVNL120A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE 200

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94_ FEATURES * 200 Volt V DS * RDS on =10« * Low threshold APPLICATIONS * Telephone handsets REFER TO ZVNL120A FOR GRAPHS ABSOLUTE M A X IM U M RATINGS. SY M B O L PARAM ETER

ZVNL120A

Abstract: ZVNL120C
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVNL120C ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =10Ω * Low threshold APPLICATIONS * Telephone handsets G D S E-Line TO92 Compatible REFER TO ZVNL120A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: ZVNL120AM1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)180m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)

fet to92

Abstract: ZVNL120A ZVNL120 DSA003785 2V50S DS200
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVNL120A TYPICAL CHARACTERISTICS VGS= 10V 8V 6V 1.2 5V 1.0 0.8 4V 0.6 0.4 3V 0.2 2V 5 10 15 20 25 30 35 40 45 4V 0.6 3V 0.2 2V 50 6 8 Saturation Characteristics 20V 1.2 1.0 10V 0.8 0.6 0.4 0.2 1 2 3 4 5 6 7 8 9

ZVN0117TA

Abstract: t50c
Contextual Info: Not Recommended for New Design Please Use ZVNL120A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN0117TA ISSUE 1 – APRIL 94 FEATURES * 170 Volt BVDS APPLICATIONS * Telephone handsets D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

Contextual Info: ZVNL120A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)200Í I(D) Max. (A)180m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)

Contextual Info: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVNL120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =10Ω * Low threshold D G APPLICATIONS * Telephone handsets S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT

ZVNL120A

Contextual Info: N-CHANNEL ENHANCEMENT ZVNL120A MODE VERTICAL DMOS FET ! L ISSUE 2- MARCH 94 FEATURES 2oovoltvD~ * *R 4 / l S m)=lOi’ Lowthreshold * ~}~ f GS APPLICATIONS * Telephone handsets E-Line n ~ ABSOLUTE MAXIMUM Continuous 1 RATINGS. Drain Current at Tamb=250C =~

RJ11 socket connector pinout

Abstract: LMC6482n TP5088 telephone circuit with dtmf tp5088 db9f pinout RD2 TP10 DTMF fsk cli circuit LM317t circuit REPLACEMENT FOR LM317t CMX602B
Contextual Info: EV6021 Evaluation Kit User Manual UM6021/4 August 2000 1.0 Features Advance Information • For CMX602B Product Evaluation • User’s Prototyping Area • Adjunct Box or Feature Phone Configuration • Socketed Space for Optional and Telco-Specific Components

Contextual Info: bGE D • ZETEX SEMICONDUCTORS 4 tlt:J7DS?ô ÜQD?bûS b 3 fi ■ ZETB CENTRE BASE E-LINE 'M V 'P' Channel Small Signal MOSFETs Part Number BV dss Id 'dm V mA A V Min. VcSlth Max. a •o mA ÎÎ a Max. R d S I o ii ) Id mA Pd VP w ZVP0545AM 1 -450 -45 - 0 .4

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RJ11 socket connector pinout

Abstract: RD2 TP10 telephone circuit with dtmf tp5088 LMC6482N ibm r32 sw2 switch CMX602B EV6021 TP10 pic kit ibm r52
Contextual Info: EV6021 Evaluation Kit User Manual UM6021/4 August 2000 1.0 Features Advance Information • For CMX602B Product Evaluation • User’s Prototyping Area • Adjunct Box or Feature Phone Configuration • Socketed Space for Optional and Telco-Specific Components

complementary MOSFET TO252

Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
Contextual Info: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and

DMG1012

Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
Contextual Info: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS

Contextual Info: SELECTION TABLES TABLE 2: P CHANNEL SM A LL SIGNAL M OSFETS Part B ^ dss *0 IpM / V mA A RpSlonl lD V GS Max. mA V w ^G SIth l number Min. at Ip Ü Max. mA at Pp Package ZVP0545A -4 5 0 -4 5 -0 .4 -1 .5 -4 .5 -1 150 -5 0 -1 0 0.7 E-line ZVP0545B -4 5 0 -1 0 0

ZVN0545G

Abstract: ZVN3320A ZVN3320F ZVN0120A ZVN0545A ZVN253 bs107p ZVN0545 ZVN2535A e-line
Contextual Info: Section 3: MOSFETs N-Channel Devices BVdss from 3 00 V to 450V Typical application areas for this range of devices include Power Supplies, Converters, Telecom Switches, M otor Control and High Voltage Driver circuits Part No. •d B V D SS V GS th •d m

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94_ FEATURES * 200 Volt V DS * fW r io n * Low threshold APPLICATIONS * Telephone handsets ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 200

ZVN2106AM

Abstract: ZVP2106AM1 ZTX753M1 ZTX751M1 ZVP0535AM1 ZTX449 42-06A ZTX653M
Contextual Info: 03 PLESSEY SENI C O N D / D I SC R E T E D E I 7 2 5 0 5 3 3 0 0 0 b 7 fl0 S I ~ E-LIN E''M l' 1 The package that offers you more POWER and PERFORMANCE to meet your Surface Mount Requirements. The range of E-Line M1 products has been specially selected to meet current and future design requirements

ZVNL120

Contextual Info: PLESSEY s e u i c o n d /d i s c r e t e ]>F|7220S33 DODSSTl S | ~ 7220533 PLESSEY SEMICOND/DISCRETE 95D 05591 T - '3 5 '- '2 N-channel enhancement mode vertical DMOS FET S' ZVNL120 FEATURES • Compact geometry • Fast sw itching speeds • No secondary breakdown