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    Plessey Semiconductors Discrete Components Div ZVN2106AM1

    Small Signal Field-Effect Transistor, 0.45A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    Vyrian ZVN2106AM1 597
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    Zetex Plc ZVN2106AM1TA

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    Vyrian ZVN2106AM1TA 481
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    ZVN2106AM Datasheets Context Search

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    Contextual Info: ZVN2106AM1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)450m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)


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