ZVN0545 Search Results

ZVN0545A

Abstract: dm600 DSA003781
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN0545A ISSUE 2 – MARCH 94 FEATURES * 450 Volts VDS * RDS on = 50Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT 450 V Continuous Drain Current at T amb=25°C

L50Q

Abstract: ZVN1320B ZVN2210L zvn311 ZVP2210M ZVP3210M
Contextual Info: P19 Ò ZVN0530B 0.15A, 800 ZVN0535B 0.15A, 800 ZVN0540B 0.15A, BOO ZVN0545B 0.15A. 800 ZVN053SA 0.07A, 800 ZVN0540A 0.07A, 800 “S ZVN0530A 0.07A, 802 ZVN2335L 4.5A, 1.50 ZVN0530L 0.15A, 800 ZVN2330L 4.5A, 1.50 jS. as ZVN2345L 4.5A, 1.50 ZVN2340M 4.5A. 1.50

TONF

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -DECEMBER 1995 ZVN0545G O - ABSOLUTE MAXIMUM RATINGS. PARAM ETER VALUE SYM BOL / ' D ra in -S o u r c e V o lta g e iD C o n tin u o u s D ra in C u rr e n t a t T amb=25°C

zvn2110b

Abstract: ZVN3306B
Contextual Info: SELECTION TABLES TABLE 1: N-CHANNEL SM ALL SIGNAL M OSFETS Part number B V 0ss 'dm V G S th| V V mA A Min. Pd ^ D S Io n l at In Max. mA S2 at lD mA Max. Package V GS V w ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50 100 10

ZVN0545

Abstract: ZVN0545L
Contextual Info: ^5 PLESSEY SEtlICOND/DISCRETE 7220533 PLESSEY SEMICOND/ D I S C R E T E N-channel enhancement­ mode vertical DMOS FET DE~| 7520533 0005b3S □ | ~ 95D 05635 T ' 3 s5 ZVN0545 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown

Contextual Info: SOT223 N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ISSUE 3 - DECEMBER 1995 FEATURES * 450 Volts VDS * RDS on = 50Ω * Ease of paralleling ZVN0545G ✪ D S D PARTMARKING DETAIL – ZVN0545 G ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-So ur ce Vo l t ag e

Contextual Info: ZVN0545G Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V) I(D) Max. (A)140m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)600m @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2 Minimum Operating Temp (øC)-55

Contextual Info: ZVN0545B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)450Í I(D) Max. (A)150m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)5.0 Minimum Operating Temp (øC)

DEVICE MARKING ZVN

Abstract: BSS138S 2N7001
Contextual Info: ZETEX SEM ICO NDUCTORS IbE D • ^70576 0Q0bflS4 3 ■ ZETB MOSFETS SPECÌFiCATÌONS — —P N-CHANIMEL SM ALL SIGNAL M OSFETS Part number ZVN0545A* ZVN0545B ZVN0540A* ZVN0540B ZVN2535A ZVN2535B ZVN0535A* ZVN 0124A ZVN0124B ZVN 2120A ZVN2120B BS107P BS107PT

Contextual Info: ZVN0545A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)450Í I(D) Max. (A)90m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)

ZVn0545a

Contextual Info: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN0545A ISSUE 2 – M ARCH 94 FEATURES * 450 Volts VDS * RDS on = 50Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL Dr ai n-Sou rce Vo l t ag e V DS VALUE UNIT 450 V Contin uo us Drain Cur r en t at T am b=25°C

Contextual Info: ZVN0545L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V) I(D) Max. (A)150m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC)

Contextual Info: ZVN0545AM1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V) I(D) Max. (A)90m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)

VN10LP

Abstract: ZVN4206A ZVN0545A ZVN2106A ZVNL110A ZVN0124A ZVN0124B ZVN0535A ZVN0540A ZVN0540B
Contextual Info: SELECTION TABLES TABLE 1: N-CHANNEL SMALL SIGNAL MOSFETS Part number B V DSS 'd *DM V GS th J V mA A Min. at Max. Pd R DS(on> 'd mA fi at lD mA Max. Package V GS V w ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50 100 10 5 TO-39

ZVN0545G

Abstract: zvn0545 DSA003735 MS50V
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - DECEMBER 1995 FEATURES * 450 Volts VDS * RDS on = 50Ω * Ease of paralleling ZVN0545G ✪ D S D PARTMARKING DETAIL – ZVN0545 G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

VN10LP

Abstract: ZVN3306 ZVN3306A ZVN3320A ZVN0545A ZVN3306B ZVN3310 ZVN4206A ZVN0124A ZVN0124B
Contextual Info: SELECTION TABLES T A B LE 1: N-CHAN N EL S M A L L SIG NAL M O SFETS Part number B V DSS 'd *DM V GS th J V mA A Min. Pd R DS(on> at ' d mA Max. fi at lD mA Max. V GS V w Package ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISS U E 3 • D ECEM BER 1995 ZVN0545G O_Z Z H H Z I I I Z I Z Z Z FEATURES ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L Drain-Source Voltage VDs VALUE 450 V 140 mA

zetex product

Abstract: oldham 24 battery charger REGULATOR 7875 HIGH SPEED SWITCHING NPN SOT23 ZVN0545G zetex transistors DUAL NPN SOT23-6 ZR431 equivalent LM4041 ZRC250
Contextual Info: 7875 Zetex brochure repro 14/9/04 14:34 Page 2 APPLICATION FOCUS Power Supply Design SEMICONDUCTORS 7875 Zetex brochure repro 14/9/04 14:34 Page 3 Cut Size, Boost Performance As a power supply designer, you’ll understand the continuous pressure to reduce costs, cut size, improve

ZVN0545

Abstract: ZVN0545A
Contextual Info: ZETEX SEMICONDUCTORS TSD » T17GS7Û 0DGSL.35 Ô • ZETB 95D 0 5 6 3 5 N-channel enhancement­ mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

1rfz44

Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
Contextual Info: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)

Contextual Info: bDE D • T c]7G57fl 0d07flQcl ZETEX N-channel enhancement­ mode vertical DMOS FET SEMICONDUCTORS ZV N 05 45 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance •

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178