L50Q
Abstract: ZVN1320B ZVN2210L zvn311 ZVP2210M ZVP3210M
Contextual Info: P19 Ò ZVN0530B 0.15A, 800 ZVN0535B 0.15A, 800 ZVN0540B 0.15A, BOO ZVN0545B 0.15A. 800 ZVN053SA 0.07A, 800 ZVN0540A 0.07A, 800 “S ZVN0530A 0.07A, 802 ZVN2335L 4.5A, 1.50 ZVN0530L 0.15A, 800 ZVN2330L 4.5A, 1.50 jS. as ZVN2345L 4.5A, 1.50 ZVN2340M 4.5A. 1.50
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zvn2110b
Abstract: ZVN3306B
Contextual Info: SELECTION TABLES TABLE 1: N-CHANNEL SM ALL SIGNAL M OSFETS Part number B V 0ss 'dm V G S th| V V mA A Min. Pd ^ D S Io n l at In Max. mA S2 at lD mA Max. Package V GS V w ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50 100 10
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Contextual Info: ZVN0545B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)450Í I(D) Max. (A)150m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)5.0 Minimum Operating Temp (øC)
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DEVICE MARKING ZVN
Abstract: BSS138S 2N7001
Contextual Info: ZETEX SEM ICO NDUCTORS IbE D • ^70576 0Q0bflS4 3 ■ ZETB MOSFETS SPECÌFiCATÌONS — —P N-CHANIMEL SM ALL SIGNAL M OSFETS Part number ZVN0545A* ZVN0545B ZVN0540A* ZVN0540B ZVN2535A ZVN2535B ZVN0535A* ZVN 0124A ZVN0124B ZVN 2120A ZVN2120B BS107P BS107PT
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VN10LP
Abstract: ZVN4206A ZVN0545A ZVN2106A ZVNL110A ZVN0124A ZVN0124B ZVN0535A ZVN0540A ZVN0540B
Contextual Info: SELECTION TABLES TABLE 1: N-CHANNEL SMALL SIGNAL MOSFETS Part number B V DSS 'd *DM V GS th J V mA A Min. at Max. Pd R DS(on> 'd mA fi at lD mA Max. Package V GS V w ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50 100 10 5 TO-39
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VN10LP
Abstract: ZVN3306 ZVN3320 ZVN4106 ZVN2106A ZVN4206A ZVN0124A ZVN0124B ZVN0535A ZVN0540A
Contextual Info: SELECTION TABLES TABLE 1: N-CHANNEL SM A L L SIG N A L M O SF ET S Part number B V DSS 'd *DM V GS th J V mA A Min. Pd R DS(on> at ' d mA Max. fi at lD mA Max. Package V GS V w ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50
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VN10LP
Abstract: ZVN3306 ZVN3306A ZVN3320A ZVN0545A ZVN3306B ZVN3310 ZVN4206A ZVN0124A ZVN0124B
Contextual Info: SELECTION TABLES T A B LE 1: N-CHAN N EL S M A L L SIG NAL M O SFETS Part number B V DSS 'd *DM V GS th J V mA A Min. Pd R DS(on> at ' d mA Max. fi at lD mA Max. V GS V w Package ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50
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ZVN0545
Abstract: ZVN0545A
Contextual Info: ZETEX SEMICONDUCTORS TSD » T17GS7Û 0DGSL.35 Ô • ZETB 95D 0 5 6 3 5 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance
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Contextual Info: bDE D • T c]7G57fl 0d07flQcl ZETEX N-channel enhancement mode vertical DMOS FET SEMICONDUCTORS ZV N 05 45 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance •
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mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is
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ZVN0545
Abstract: ZVN0545L
Contextual Info: ^5 PLESSEY SEtlICOND/DISCRETE 7220533 PLESSEY SEMICOND/ D I S C R E T E N-channel enhancement mode vertical DMOS FET DE~| 7520533 0005b3S □ | ~ 95D 05635 T ' 3 s5 ZVN0545 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown
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2106a
Abstract: BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019
Contextual Info: CROSS R EF ER E N C E LIST Industry Part No. Zetex Suggested Replacem ent 2N 6659 2N 6660 2N6661 ZVN2106B ZVN2106B ZVN2110B 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107 BS107A BS108
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