ZVN0124B Search Results

DEVICE MARKING ZVN

Abstract: BSS138S 2N7001
Contextual Info: ZETEX SEM ICO NDUCTORS IbE D • ^70576 0Q0bflS4 3 ■ ZETB MOSFETS SPECÌFiCATÌONS — —P N-CHANIMEL SM ALL SIGNAL M OSFETS Part number ZVN0545A* ZVN0545B ZVN0540A* ZVN0540B ZVN2535A ZVN2535B ZVN0535A* ZVN 0124A ZVN0124B ZVN 2120A ZVN2120B BS107P BS107PT

1rfz44

Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
Contextual Info: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

t5d diode

Contextual Info: ^53 ZETEX SEMICONDUCTORS D TÎ7QS7Ô OOOSbl? h • ZETB 95D 0 5 6 1 7 D — T -3 ? -0 °l ZV N 0124 N-channel enhancement­ mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

zvn2110b

Abstract: ZVN3306B
Contextual Info: SELECTION TABLES TABLE 1: N-CHANNEL SM ALL SIGNAL M OSFETS Part number B V 0ss 'dm V G S th| V V mA A Min. Pd ^ D S Io n l at In Max. mA S2 at lD mA Max. Package V GS V w ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50 100 10

FERRANTI

Abstract: IRFZ32 VN10LP ZVNO12 IRFZ30 ZVN2106 ZVN2106A IRFZ20 IRFZ22 ZVN0120A
Contextual Info: - 245 /m Ta=25l3 Vds or % Vd g Vg s !l (V) (V) t £J € *± € m Vg s (V) C M A) N N N N N N N N N 200 ± 2 0 200 ± 2 0 240 ± 2 0 240 ± 2 0 240 ± 2 0 350 ± 2 0 N N N N N N N N N 400 400 450 90 60 60 60 100 100 100 200 200 200 60 60 100 5 ±20 ±20

Contextual Info: PLESSEY TS SEMICOND/DISCRETE 7220533 P LE S SE Y S EM I C O N D / D I S C R E T E • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance • Low current drive • Ease of paralleling DESCRIPTION A compact Interdigitated geometry forms the

VN10LP

Abstract: ZVN4206A ZVN0545A ZVN2106A ZVNL110A ZVN0124A ZVN0124B ZVN0535A ZVN0540A ZVN0540B
Contextual Info: SELECTION TABLES TABLE 1: N-CHANNEL SMALL SIGNAL MOSFETS Part number B V DSS 'd *DM V GS th J V mA A Min. at Max. Pd R DS(on> 'd mA fi at lD mA Max. Package V GS V w ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50 100 10 5 TO-39

VN10LP

Abstract: ZVN3306 ZVN3320 ZVN4106 ZVN2106A ZVN4206A ZVN0124A ZVN0124B ZVN0535A ZVN0540A
Contextual Info: SELECTION TABLES TABLE 1: N-CHANNEL SM A L L SIG N A L M O SF ET S Part number B V DSS 'd *DM V GS th J V mA A Min. Pd R DS(on> at ' d mA Max. fi at lD mA Max. Package V GS V w ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50

VN10LP

Abstract: ZVN3306 ZVN3306A ZVN3320A ZVN0545A ZVN3306B ZVN3310 ZVN4206A ZVN0124A ZVN0124B
Contextual Info: SELECTION TABLES T A B LE 1: N-CHAN N EL S M A L L SIG NAL M O SFETS Part number B V DSS 'd *DM V GS th J V mA A Min. Pd R DS(on> at ' d mA Max. fi at lD mA Max. V GS V w Package ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50

Contextual Info: bOE D • ^70576 Ü Q G7 7T 1 Û1S ■ IZETB ZETEX S E M I C O N D U C T O R S N-channel enhancement­ mode vertical DMOS FET Z V N 0124 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability