ZVN2106 Search Results

ZVN2106

Abstract: ZVN2106 equivalent zvn2106 sot223 ZVP2106G ZVN2106G DSA003735
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2106G ISSUE 3 – NOVEMBER 1995 FEATURES * 60 Volt VDS * RDS on =2Ω VGS= 10V 9V 3 8V 7V 2 6V 5V 1 4V 3V 1 2 3 4 VDD= 20V 30V 50V 16 VGS-Gate Source Voltage (Volts) ID(On) -On-State Drain Current (Amps)

ZVN2106A

Abstract: T092 j-40-20 T 3361 D
Contextual Info: N-CHANNEL ENHANCEMENT ZVN2106A MODE VERTICAL DMOS FET ISSUE 2- MARCH 94 ❑ FEATURES * 60 Volt VD~ *R J 1 DS on =2Q ID G s E-Line T092 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Drain-Source V&age .——— ‘DS ID 450 .———. Gate Source Voltage . . .——

ZVN21

Contextual Info: SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL D.MOSFET ZVN2106Z PARTMARKING DETAIL: ZVN2106Z - N 16 * FOR TYPICAL CHARACTERISTICS GRAPHS SEE ZVN2106G DATA SHEET ABSOLUTE M A X IM U M RATINGS PARAMETER SYM BO L D rain-S ource V oltage V DS C ontin uou s Drain C urrent at Ta = 2 5 °C

ZVN2106B

Contextual Info: ZVN2106B MECHANICAL DATA N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 60V ID 1.2A RDS on 2.0Ω Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)

Contextual Info: ZVN2106L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)650m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC)

Contextual Info: SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL D.MOSFET ZVN2106Z PARTMARKING DETAIL: ZVN2106Z • N 16 • FOR TYPICAL CHARACTERISTICS GRAPHS SEE ZVN2106G DATA SHEET ABSOLUTE MAXIMUM RATINGS SYM BOL PARAMETER VALUE UNIT 60 0.61 V A A V W °C D CO > Drain-Source Voltage

zvn210

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2106G ISSUE 3 - NOVEMBER 1995. . FEATURES ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL D ra in -S o u rc e V o lta g e

Contextual Info: SOT223 N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN2106G ISSUE 3 – NOVEMBER 1995 FEATURES * 60 Volt VDS * RDS on =2Ω D S COMPLEMENTARY TYPE PARTMARKING DETAIL - ZVP2106G ZVN2106 D G ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e

Contextual Info: ZVN2106G Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)700m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)2 Minimum Operating Temp (øC)-55

Contextual Info: ZVN2106B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)30 I(D) Max. (A)1.2 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)5.0 Minimum Operating Temp (øC)

Contextual Info: ZVN2106AM1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)450m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)

2106a

Abstract: BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019
Contextual Info: CROSS R EF ER E N C E LIST Industry Part No. Zetex Suggested Replacem ent 2N 6659 2N 6660 2N6661 ZVN2106B ZVN2106B ZVN2110B 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107 BS107A BS108

Contextual Info: ZVN2106B MECHANICAL DATA N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 60V ID 1.2A RDS on 2.0 Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.

ZVP2106

Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2106G ISSUE 3 – MARCH 96 FEATURES * 60 Volt VDS * RDS on =5Ω PARTMARKING DETAIL: COMPLEMENTARY TYPE: - D S ZVP2106 ZVN2106G D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ZVN2106G ISSU E 3 - NOVEMBER 1995_ - FEATURES * 60 Volt V DS * R DS onl= 2 £ î C O M PLEM EN T A R Y TYPE - ZVP2106G P A R T M A R K IN G D E T A IL - ZVN 2106 ABSOLUTE MAXIMUM RATINGS.

ZVN2106

Abstract: ZVN2106G ZVP2106G DS360
Contextual Info: SOT223 N CHANNEL ENHANCEMENT MODE VERTICAL DM O S FET FEATURES. 8A PU LSE DRAIN CURRENT. FAST SWITCHING SPEED. EXCELLENT TEM PERATURE STABILITY. HIGH INPUT IMPEDANCE. C O MPLEMENTARY TYPE - ZVP2106G. PARTMARKING DETAIL - ZVN2106 ABSOLUTE M A XIM U M RATINGS

Contextual Info: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN2106A ISSUE 2 – M ARCH 94 FEATURES * 60 Volt VDS * RDS on =2Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS 60 V Contin uo us Drain Cur r en t at T am b=25°C

sem 2106

Abstract: sem 2106 24 pin ZVN2106 SOT 153 2106 sot
Contextual Info: ZETEX S E M I C O N D U C T O R S W D T Î 7 0 5 7 Û Q G D S b k S 0 • ZETB 95D 0 5 6 4 5 T ' 3 ? - <5? N-channel enhancement mode vertical DMOS FET ZVN 2106 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

1rfz44

Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
Contextual Info: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)

Contextual Info: D SbE • ^70576 0D07052 7Tb H Z E T B SEMICONDUCTOR DICE MOSFETs - N-CHANNEL B V 0SS Dice type ZVN0540 Min. ZETEX f'DSIonI Max. at lD V qs SEMICONDUCTORS Max. IDSS at Max. IGSS at 'd m Rated VDS V GS=20V Min. atV0S ^GS th Chip Min. Max. at lD geometry at

HVQFN16

Abstract: JP13 ZVN2106 HVQFN14 ISP1102 ISP1104 ISP1105 ISP1106 ISP1107 ISP110X
Contextual Info: UM10025_2 Semiconductors ISP110x Eval Kit User Manual for the HVQFN14/16 Package Rev. 02.00 — 12 April 2004 User manual Document information Info Keywords Abstract Content ISP1102, ISP1104, ISP1105, ISP1106, USB, universal serial bus, transceiver The ISP110x eval board helps you to evaluate the features of the

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455