ZVN21 Search Results

ZVN2106

Abstract: ZVN2106 equivalent zvn2106 sot223 ZVP2106G ZVN2106G DSA003735
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2106G ISSUE 3 – NOVEMBER 1995 FEATURES * 60 Volt VDS * RDS on =2Ω VGS= 10V 9V 3 8V 7V 2 6V 5V 1 4V 3V 1 2 3 4 VDD= 20V 30V 50V 16 VGS-Gate Source Voltage (Volts) ID(On) -On-State Drain Current (Amps)

ZVN2120

Abstract: ZVN2120G DSA003736
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - FEBRUARY 1996 FEATURES: * VDS - 200V * RDS ON - 10Ω ZVN2120G ✪ D S PARTMARKING DETAIL - ZVN2120 D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 200 V Continuous Drain Current at T amb=25°C

ZVN2106A

Abstract: T092 j-40-20 T 3361 D
Contextual Info: N-CHANNEL ENHANCEMENT ZVN2106A MODE VERTICAL DMOS FET ISSUE 2- MARCH 94 ❑ FEATURES * 60 Volt VD~ *R J 1 DS on =2Q ID G s E-Line T092 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Drain-Source V&age .——— ‘DS ID 450 .———. Gate Source Voltage . . .——

Contextual Info: ZVN2120C Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)180m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)

ZVN21

Contextual Info: SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL D.MOSFET ZVN2106Z PARTMARKING DETAIL: ZVN2106Z - N 16 * FOR TYPICAL CHARACTERISTICS GRAPHS SEE ZVN2106G DATA SHEET ABSOLUTE M A X IM U M RATINGS PARAMETER SYM BO L D rain-S ource V oltage V DS C ontin uou s Drain C urrent at Ta = 2 5 °C

zvn2110

Abstract: G156 ZVN2110L G158
Contextual Info: PLESSEY SEMCOND/MSCRETE 7220533 PLESSEY ìT^ C ON D / DI S C R E T E S E M I C eI 7250533 0DQSt,S3 1 F 9 5D 05653 -o7 N-channel enhancement mode vertical DMOS FET ZVN2110 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown •

ZVN2106B

Contextual Info: ZVN2106B MECHANICAL DATA N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 60V ID 1.2A RDS on 2.0Ω Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)

Contextual Info: ZVN2106L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)650m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC)

ZVP2120

Abstract: ZVP2120G ZVN2120G DSA0037407
Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 FEATURES * 200 Volt VDS * RDS on =25Ω ✪ PARTMARKING DETAIL – COMPLEMENTARY TYPE – ZVP2120 ZVN2120G ZVP2120G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

ZVN2120A

Abstract: DSA003782
Contextual Info: ZVN2120A ID on -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) VGS=10V 8V 7V 6V 1.6 1.2 5V 0.8 4V 0.4 3V 2V 10 20 30 40 50 1.4 1.2 VGS= 10V 0.8 0.4 2V 4 0.5A 0.1A 6 8 10 ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts)

Contextual Info: ZVN2120Z SOT89 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * PARTMARKING D E T A IL -Z V N 2 1 2 0 Z -N 1 0 ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BOL Drain-Source Voltage V Continuous Drain Current @ Tam b=25°C Id VALUE ds U N IT 200 V 0.27 A A Pulsed Drain C urrent

Contextual Info: SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL D.MOSFET ZVN2106Z PARTMARKING DETAIL: ZVN2106Z • N 16 • FOR TYPICAL CHARACTERISTICS GRAPHS SEE ZVN2106G DATA SHEET ABSOLUTE MAXIMUM RATINGS SYM BOL PARAMETER VALUE UNIT 60 0.61 V A A V W °C D CO > Drain-Source Voltage

zvn210

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2106G ISSUE 3 - NOVEMBER 1995. . FEATURES ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL D ra in -S o u rc e V o lta g e

Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 O_ FEATURES * 200 V o lt V DS * Ros.onpzsa PARTM ARKING DETAIL - ZVP2120 CO M PLEM ENTARY TYPE - ZVN2120G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT

DEVICE MARKING ZVN

Abstract: BSS138S 2N7001
Contextual Info: ZETEX SEM ICO NDUCTORS IbE D • ^70576 0Q0bflS4 3 ■ ZETB MOSFETS SPECÌFiCATÌONS — —P N-CHANIMEL SM ALL SIGNAL M OSFETS Part number ZVN0545A* ZVN0545B ZVN0540A* ZVN0540B ZVN2535A ZVN2535B ZVN0535A* ZVN 0124A ZVN0124B ZVN 2120A ZVN2120B BS107P BS107PT

3V02

Abstract: ZVN2110A
Contextual Info: ZVN2110A VGS= 10V 9V 2.0 1.6 ID on -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS 8V 7V 1.2 6V 0.8 5V 4V 0.4 3V 20 40 60 80 100 1.6 4V 0.4 3V 2 ID= 1A 2 500mA 100mA 6 8 10 ID(on) -On-State Drain Current (Amps)

ZVN2110

Abstract: f032A ZVP2110 ZVN2110G ZVP2110G on47 3V02 DSA003736 tr48 R01-A1
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2110G VGS= 10V 9V 2.0 1.6 ID on -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS 8V 7V 1.2 6V 0.8 5V 4V 0.4 3V 20 40 60 80 100 1.6 1.2 5V 4 ID= 1A 2 500mA 100mA

ZVN2110A

Abstract: s 8n DSA003782 ZVN211
Contextual Info: ZVN2110A VGS= 10V 9V 2.0 1.6 ID on -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS 8V 7V 1.2 6V 0.8 5V 4V 0.4 3V 20 40 60 80 100 1.6 4V 0.4 3V 2 ID= 1A 2 500mA 100mA 6 8 10 ID(on) -On-State Drain Current (Amps)

Contextual Info: Not Recommended for New Design Please Use ZVN2110A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2120C ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =10Ω G D S E-Line TO92 Compatible REFER TO ZVN2120A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER

ZVN2120

Abstract: ZVN2120B
Contextual Info: plessey s e n i c o n d /d i s c r e t e 7220533 "t5 PLESSEY SEMICOND/DI SCRETE d F | ? 22GS33 □□□Sbbl □ 95D 0 5 6 6 1 T- N-channel enhancement mode vertical DMOS FET 3J-o? ZVN2120 FEATU RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown

2120Z

Abstract: SOT89N
Contextual Info: ZVN2120Z SOT89 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * PARTM ARKING DETAIL - ZVN 2120Z - N10 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage Continuous Drain Current @ Tamb=25°C Pulsed Drain Current Gate-Source Voltage M ax Power D issipation @ Tamb=25’C

Contextual Info: SOT223 N-CHANNEL ENH AN CEM ENT ZVN2110G M O D E VERTICAL D M O S FET ISSU E 3 - OCTOBER 1995 O_ FEATURES * 6A PULSE DRAIN CURRENT * FAST SWITCHING SPEED PARTMARKING DETAIL COMPLEMENTARY TYPE - ZVN2110 ZVP2110G % D ABSOLUTE MAXIMUM RATINGS.

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94_ FEATURES * 100 Volt vDS * R DS on = REFER TO ZVN2110A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VALUE UNIT VDS 100 Continuous Drain Current at T am[j=25°C

Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET GS 250 -1.6 ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω ZVP2110G ✪ D -1.4 200 COMPLEMENTARY TYPE – ZVN2110G -1.2 150 S -1.0 DS= PARTMARKING DETAIL – ZVP2110 -0.8 100 D G -0.6 ABSOLUTE MAXIMUM RATINGS.